JPH02116750U - - Google Patents
Info
- Publication number
- JPH02116750U JPH02116750U JP2504890U JP2504890U JPH02116750U JP H02116750 U JPH02116750 U JP H02116750U JP 2504890 U JP2504890 U JP 2504890U JP 2504890 U JP2504890 U JP 2504890U JP H02116750 U JPH02116750 U JP H02116750U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- auge
- semiconductor device
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2504890U JPH02116750U (enrdf_load_stackoverflow) | 1990-03-15 | 1990-03-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2504890U JPH02116750U (enrdf_load_stackoverflow) | 1990-03-15 | 1990-03-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02116750U true JPH02116750U (enrdf_load_stackoverflow) | 1990-09-19 |
Family
ID=31245434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2504890U Pending JPH02116750U (enrdf_load_stackoverflow) | 1990-03-15 | 1990-03-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02116750U (enrdf_load_stackoverflow) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5720432A (en) * | 1980-07-14 | 1982-02-02 | Toshiba Corp | Formation of ohmic electrode |
| JPS5723222A (en) * | 1980-07-17 | 1982-02-06 | Matsushita Electric Ind Co Ltd | Formation of semiconductor element electrode |
| JPS57106087A (en) * | 1980-11-03 | 1982-07-01 | Siemens Ag | Light reflective ohmic contact and method of producing same |
| JPS58100455A (ja) * | 1981-12-09 | 1983-06-15 | Matsushita Electric Ind Co Ltd | 化合物半導体のオ−ミツク電極およびその製造方法 |
-
1990
- 1990-03-15 JP JP2504890U patent/JPH02116750U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5720432A (en) * | 1980-07-14 | 1982-02-02 | Toshiba Corp | Formation of ohmic electrode |
| JPS5723222A (en) * | 1980-07-17 | 1982-02-06 | Matsushita Electric Ind Co Ltd | Formation of semiconductor element electrode |
| JPS57106087A (en) * | 1980-11-03 | 1982-07-01 | Siemens Ag | Light reflective ohmic contact and method of producing same |
| JPS58100455A (ja) * | 1981-12-09 | 1983-06-15 | Matsushita Electric Ind Co Ltd | 化合物半導体のオ−ミツク電極およびその製造方法 |
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