JPH0210923B2 - - Google Patents
Info
- Publication number
- JPH0210923B2 JPH0210923B2 JP56080243A JP8024381A JPH0210923B2 JP H0210923 B2 JPH0210923 B2 JP H0210923B2 JP 56080243 A JP56080243 A JP 56080243A JP 8024381 A JP8024381 A JP 8024381A JP H0210923 B2 JPH0210923 B2 JP H0210923B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- voltage
- mim
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 32
- 239000004973 liquid crystal related substance Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56080243A JPS57195218A (en) | 1981-05-27 | 1981-05-27 | Non-linear element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56080243A JPS57195218A (en) | 1981-05-27 | 1981-05-27 | Non-linear element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57195218A JPS57195218A (en) | 1982-11-30 |
| JPH0210923B2 true JPH0210923B2 (enrdf_load_stackoverflow) | 1990-03-12 |
Family
ID=13712878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56080243A Granted JPS57195218A (en) | 1981-05-27 | 1981-05-27 | Non-linear element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57195218A (enrdf_load_stackoverflow) |
-
1981
- 1981-05-27 JP JP56080243A patent/JPS57195218A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57195218A (en) | 1982-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6272168A (ja) | マトリクス液晶表示装置用のｎ↑＋非晶質シリコン薄膜電界効果トランジスタ | |
| US5274485A (en) | Liquid crystal display | |
| JP2568857B2 (ja) | アクティブマトリックス基板 | |
| JP3043870B2 (ja) | 液晶表示装置 | |
| JPS63166236A (ja) | 電子装置 | |
| JPH0210923B2 (enrdf_load_stackoverflow) | ||
| JPS6146068B2 (enrdf_load_stackoverflow) | ||
| JPH01120068A (ja) | 薄膜トランジスタ | |
| JPS60177676A (ja) | 薄膜トランジスタ素子およびその製造方法 | |
| JP2795883B2 (ja) | 液晶表示装置における非線形素子 | |
| JPH0244769A (ja) | 薄膜トランジスタ | |
| JP3076483B2 (ja) | 金属配線基板の製造方法および薄膜ダイオードアレイの製造方法 | |
| JPH0618930A (ja) | アクティブマトリックス形液晶表示装置の製造方法 | |
| US4701997A (en) | Method of making photo-electric converting elements | |
| JPS62122171A (ja) | 薄膜トランジスタ | |
| JPH0546990B2 (enrdf_load_stackoverflow) | ||
| JPH0345930A (ja) | ２端子型非線形素子 | |
| JP2989286B2 (ja) | 液晶表示装置における電極形成方法及び電極構造 | |
| JPH08213625A (ja) | アクティブマトリクス型表示装置及びその製造方法 | |
| JPS61188968A (ja) | 薄膜トランジスタ | |
| JPH0273330A (ja) | アクティブマトリクス基板 | |
| JP2716106B2 (ja) | アクティブマトリクス基板の製造方法 | |
| JPH01271728A (ja) | 液晶表示装置 | |
| JPS6027159A (ja) | 薄膜非線形抵抗素子の製造方法 | |
| JPH05183214A (ja) | アクティブマトリックス液晶表示装置 |