JPH0210589B2 - - Google Patents
Info
- Publication number
- JPH0210589B2 JPH0210589B2 JP59169207A JP16920784A JPH0210589B2 JP H0210589 B2 JPH0210589 B2 JP H0210589B2 JP 59169207 A JP59169207 A JP 59169207A JP 16920784 A JP16920784 A JP 16920784A JP H0210589 B2 JPH0210589 B2 JP H0210589B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist
- forming
- insulating film
- stencil pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011229 interlayer Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 229910000978 Pb alloy Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 14
- 230000018109 developmental process Effects 0.000 description 13
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 238000006664 bond formation reaction Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59169207A JPS6147678A (ja) | 1984-08-15 | 1984-08-15 | 接合形成用レジストステンシルパタ−ンの作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59169207A JPS6147678A (ja) | 1984-08-15 | 1984-08-15 | 接合形成用レジストステンシルパタ−ンの作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6147678A JPS6147678A (ja) | 1986-03-08 |
| JPH0210589B2 true JPH0210589B2 (enrdf_load_stackoverflow) | 1990-03-08 |
Family
ID=15882185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59169207A Granted JPS6147678A (ja) | 1984-08-15 | 1984-08-15 | 接合形成用レジストステンシルパタ−ンの作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6147678A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01106482A (ja) * | 1987-10-20 | 1989-04-24 | Fujitsu Ltd | 超伝導材料構造 |
| US5386971A (en) * | 1993-07-22 | 1995-02-07 | Owens-Illinois Closure Inc. | Plastic pellet delivery system and method of use |
-
1984
- 1984-08-15 JP JP59169207A patent/JPS6147678A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6147678A (ja) | 1986-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |