JPS6317348B2 - - Google Patents

Info

Publication number
JPS6317348B2
JPS6317348B2 JP56185330A JP18533081A JPS6317348B2 JP S6317348 B2 JPS6317348 B2 JP S6317348B2 JP 56185330 A JP56185330 A JP 56185330A JP 18533081 A JP18533081 A JP 18533081A JP S6317348 B2 JPS6317348 B2 JP S6317348B2
Authority
JP
Japan
Prior art keywords
gold
thin film
resist
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56185330A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5887884A (ja
Inventor
Yoshikazu Hidaka
Yoichi Enomoto
Toshiaki Murakami
Takahiro Inamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56185330A priority Critical patent/JPS5887884A/ja
Publication of JPS5887884A publication Critical patent/JPS5887884A/ja
Publication of JPS6317348B2 publication Critical patent/JPS6317348B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0744Manufacture or deposition of electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP56185330A 1981-11-20 1981-11-20 酸化物超伝導体回路の電極形成方法 Granted JPS5887884A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56185330A JPS5887884A (ja) 1981-11-20 1981-11-20 酸化物超伝導体回路の電極形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56185330A JPS5887884A (ja) 1981-11-20 1981-11-20 酸化物超伝導体回路の電極形成方法

Publications (2)

Publication Number Publication Date
JPS5887884A JPS5887884A (ja) 1983-05-25
JPS6317348B2 true JPS6317348B2 (enrdf_load_stackoverflow) 1988-04-13

Family

ID=16168927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56185330A Granted JPS5887884A (ja) 1981-11-20 1981-11-20 酸化物超伝導体回路の電極形成方法

Country Status (1)

Country Link
JP (1) JPS5887884A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119243A (ja) * 1983-11-24 1985-06-26 三菱レイヨン株式会社 ジヤカ−ド機
US5015620A (en) * 1987-11-06 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce High-Tc superconductor contact unit having low interface resistivity, and method of making
JP2805010B2 (ja) * 1988-09-30 1998-09-30 大阪府 酸化物超伝導体の電極形成方法
JPH02116180A (ja) * 1988-10-26 1990-04-27 Osaka Prefecture 酸化物超伝導体の電極形成方法

Also Published As

Publication number Publication date
JPS5887884A (ja) 1983-05-25

Similar Documents

Publication Publication Date Title
US4220706A (en) Etchant solution containing HF-HnO3 -H2 SO4 -H2 O2
US4115120A (en) Method of forming thin film patterns by differential pre-baking of resist
EP0052787B1 (en) Etchant composition and application thereof
US3979240A (en) Method of etching indium tin oxide
US3772102A (en) Method of transferring a desired pattern in silicon to a substrate layer
US3220938A (en) Oxide underlay for printed circuit components
US4160691A (en) Etch process for chromium
JPS6317348B2 (enrdf_load_stackoverflow)
JPS6230624B2 (enrdf_load_stackoverflow)
US3450534A (en) Tin-lead-tin layer arrangement to improve adherence of photoresist and substrate
JPH0434815B2 (enrdf_load_stackoverflow)
JPS5847851B2 (ja) チタン層を有する半導体素子の製造方法
JPS6261334A (ja) パタ−ンの形成方法
JPS63254728A (ja) レジストパタ−ンの形成方法
JPS6390832A (ja) パタ−ン形成方法
JPS58209809A (ja) 透明導電膜の形成方法
JPH0636999A (ja) 電子線リソグラフィーにおけるチャージアップ防止方法
JPS5923106B2 (ja) 半導体装置の製造方法
JPS6193629A (ja) 半導体装置の製造方法
JPH0416009B2 (enrdf_load_stackoverflow)
JPH0828538B2 (ja) 超電導薄膜パタンの形成方法
JPS63155623A (ja) 半導体装置の製造方法
JPS6325519B2 (enrdf_load_stackoverflow)
JPS5575244A (en) Method of fabricating semiconductor device
JPS5915181B2 (ja) 半導体装置の製造方法