JPH0156537B2 - - Google Patents

Info

Publication number
JPH0156537B2
JPH0156537B2 JP60039270A JP3927085A JPH0156537B2 JP H0156537 B2 JPH0156537 B2 JP H0156537B2 JP 60039270 A JP60039270 A JP 60039270A JP 3927085 A JP3927085 A JP 3927085A JP H0156537 B2 JPH0156537 B2 JP H0156537B2
Authority
JP
Japan
Prior art keywords
insulating film
forming
gate electrode
ohmic electrode
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60039270A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61198785A (ja
Inventor
Norio Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60039270A priority Critical patent/JPS61198785A/ja
Publication of JPS61198785A publication Critical patent/JPS61198785A/ja
Publication of JPH0156537B2 publication Critical patent/JPH0156537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode

Landscapes

  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP60039270A 1985-02-28 1985-02-28 半導体装置の製造方法 Granted JPS61198785A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60039270A JPS61198785A (ja) 1985-02-28 1985-02-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60039270A JPS61198785A (ja) 1985-02-28 1985-02-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61198785A JPS61198785A (ja) 1986-09-03
JPH0156537B2 true JPH0156537B2 (en, 2012) 1989-11-30

Family

ID=12548451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60039270A Granted JPS61198785A (ja) 1985-02-28 1985-02-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61198785A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6453579A (en) * 1987-08-25 1989-03-01 Matsushita Electric Ind Co Ltd Method of forming microelectrode pattern

Also Published As

Publication number Publication date
JPS61198785A (ja) 1986-09-03

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