JPS6453579A - Method of forming microelectrode pattern - Google Patents

Method of forming microelectrode pattern

Info

Publication number
JPS6453579A
JPS6453579A JP21044287A JP21044287A JPS6453579A JP S6453579 A JPS6453579 A JP S6453579A JP 21044287 A JP21044287 A JP 21044287A JP 21044287 A JP21044287 A JP 21044287A JP S6453579 A JPS6453579 A JP S6453579A
Authority
JP
Japan
Prior art keywords
side wall
electrode
mask
electrodes
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21044287A
Other languages
Japanese (ja)
Inventor
Takashi Hirose
Masaki Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21044287A priority Critical patent/JPS6453579A/en
Publication of JPS6453579A publication Critical patent/JPS6453579A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To maintain a uniform distance between electrodes in a MICROLEADtrode pattern by a method wherein a first electrode which is nearly vertical to a substrate surface is formed and side wall films are formed on its side walls and then, after metal films are formed, the mask and the side wall films are removed with the metal films to form second electrodes. CONSTITUTION:A tungsten silicide film is formed on a substrate 11. Then, after a mask 13 with a micropattern is formed on the WSix film, a first electrode 12 whose side surfaces are nearly vertical to the substrate 11 is formed. Then an SiNx film 15 is formed over the whole surface and side wall films 15a are formed on the side surfaces of the first electrode 12. Then, gold- germanium alloy is evaporated on required regions on the surface of the substrate 11 to form second electrodes 17. At that time, a metal thin film 17a is formed simultaneously on the mask 13 and the side wall films 15a. Then the mask 13 and the side wall films 15a are dissolved and the metal thin film 17a is removed simultaneously to form a fine electrode pattern composed of the first electrode 12 and second electrodes 17.
JP21044287A 1987-08-25 1987-08-25 Method of forming microelectrode pattern Pending JPS6453579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21044287A JPS6453579A (en) 1987-08-25 1987-08-25 Method of forming microelectrode pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21044287A JPS6453579A (en) 1987-08-25 1987-08-25 Method of forming microelectrode pattern

Publications (1)

Publication Number Publication Date
JPS6453579A true JPS6453579A (en) 1989-03-01

Family

ID=16589396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21044287A Pending JPS6453579A (en) 1987-08-25 1987-08-25 Method of forming microelectrode pattern

Country Status (1)

Country Link
JP (1) JPS6453579A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001030388A1 (en) * 1999-10-25 2001-05-03 Senju Pharmaceutical Co., Ltd. Tension-relieving agents for ciliary muscle

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165636A (en) * 1979-06-12 1980-12-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS6173381A (en) * 1984-09-19 1986-04-15 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JPS61108175A (en) * 1984-11-01 1986-05-26 Toshiba Corp Semiconductor device and manufacture thereof
JPS61198785A (en) * 1985-02-28 1986-09-03 Toshiba Corp Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165636A (en) * 1979-06-12 1980-12-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS6173381A (en) * 1984-09-19 1986-04-15 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JPS61108175A (en) * 1984-11-01 1986-05-26 Toshiba Corp Semiconductor device and manufacture thereof
JPS61198785A (en) * 1985-02-28 1986-09-03 Toshiba Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001030388A1 (en) * 1999-10-25 2001-05-03 Senju Pharmaceutical Co., Ltd. Tension-relieving agents for ciliary muscle

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