JPS6453579A - Method of forming microelectrode pattern - Google Patents
Method of forming microelectrode patternInfo
- Publication number
- JPS6453579A JPS6453579A JP21044287A JP21044287A JPS6453579A JP S6453579 A JPS6453579 A JP S6453579A JP 21044287 A JP21044287 A JP 21044287A JP 21044287 A JP21044287 A JP 21044287A JP S6453579 A JPS6453579 A JP S6453579A
- Authority
- JP
- Japan
- Prior art keywords
- side wall
- electrode
- mask
- electrodes
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To maintain a uniform distance between electrodes in a MICROLEADtrode pattern by a method wherein a first electrode which is nearly vertical to a substrate surface is formed and side wall films are formed on its side walls and then, after metal films are formed, the mask and the side wall films are removed with the metal films to form second electrodes. CONSTITUTION:A tungsten silicide film is formed on a substrate 11. Then, after a mask 13 with a micropattern is formed on the WSix film, a first electrode 12 whose side surfaces are nearly vertical to the substrate 11 is formed. Then an SiNx film 15 is formed over the whole surface and side wall films 15a are formed on the side surfaces of the first electrode 12. Then, gold- germanium alloy is evaporated on required regions on the surface of the substrate 11 to form second electrodes 17. At that time, a metal thin film 17a is formed simultaneously on the mask 13 and the side wall films 15a. Then the mask 13 and the side wall films 15a are dissolved and the metal thin film 17a is removed simultaneously to form a fine electrode pattern composed of the first electrode 12 and second electrodes 17.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21044287A JPS6453579A (en) | 1987-08-25 | 1987-08-25 | Method of forming microelectrode pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21044287A JPS6453579A (en) | 1987-08-25 | 1987-08-25 | Method of forming microelectrode pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6453579A true JPS6453579A (en) | 1989-03-01 |
Family
ID=16589396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21044287A Pending JPS6453579A (en) | 1987-08-25 | 1987-08-25 | Method of forming microelectrode pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6453579A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001030388A1 (en) * | 1999-10-25 | 2001-05-03 | Senju Pharmaceutical Co., Ltd. | Tension-relieving agents for ciliary muscle |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165636A (en) * | 1979-06-12 | 1980-12-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS6173381A (en) * | 1984-09-19 | 1986-04-15 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
JPS61108175A (en) * | 1984-11-01 | 1986-05-26 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS61198785A (en) * | 1985-02-28 | 1986-09-03 | Toshiba Corp | Manufacture of semiconductor device |
-
1987
- 1987-08-25 JP JP21044287A patent/JPS6453579A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165636A (en) * | 1979-06-12 | 1980-12-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS6173381A (en) * | 1984-09-19 | 1986-04-15 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
JPS61108175A (en) * | 1984-11-01 | 1986-05-26 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS61198785A (en) * | 1985-02-28 | 1986-09-03 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001030388A1 (en) * | 1999-10-25 | 2001-05-03 | Senju Pharmaceutical Co., Ltd. | Tension-relieving agents for ciliary muscle |
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