JPH01501027A - 半導体構成要素 - Google Patents

半導体構成要素

Info

Publication number
JPH01501027A
JPH01501027A JP62502901A JP50290187A JPH01501027A JP H01501027 A JPH01501027 A JP H01501027A JP 62502901 A JP62502901 A JP 62502901A JP 50290187 A JP50290187 A JP 50290187A JP H01501027 A JPH01501027 A JP H01501027A
Authority
JP
Japan
Prior art keywords
insulating layer
zone
semiconductor component
emitter
metallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62502901A
Other languages
English (en)
Japanese (ja)
Inventor
トルスキー、ヴェルナー
Original Assignee
セミクロン　エレクトロニク　ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セミクロン　エレクトロニク　ゲーエムベーハー filed Critical セミクロン　エレクトロニク　ゲーエムベーハー
Publication of JPH01501027A publication Critical patent/JPH01501027A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W20/4441—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
    • H10W20/48—
    • H10W44/401—
    • H10W72/00—

Landscapes

  • Thyristors (AREA)
  • Die Bonding (AREA)
JP62502901A 1986-05-14 1987-05-13 半導体構成要素 Pending JPH01501027A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3616185.3 1986-05-14
DE19863616185 DE3616185A1 (de) 1986-05-14 1986-05-14 Halbleiterbauelement

Publications (1)

Publication Number Publication Date
JPH01501027A true JPH01501027A (ja) 1989-04-06

Family

ID=6300786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62502901A Pending JPH01501027A (ja) 1986-05-14 1987-05-13 半導体構成要素

Country Status (4)

Country Link
EP (1) EP0275261A1 (enExample)
JP (1) JPH01501027A (enExample)
DE (1) DE3616185A1 (enExample)
WO (1) WO1987007081A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264765A (ja) * 1995-03-27 1996-10-11 Hitachi Ltd パワーチップキャリア及びこれを用いたパワー半導体装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0389862A3 (de) * 1989-03-29 1990-12-19 Siemens Aktiengesellschaft Abschaltbarer Thyristor
DE19612838A1 (de) * 1995-11-13 1997-05-15 Asea Brown Boveri Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung
EP1030355B1 (en) * 1998-09-10 2007-12-19 Mitsubishi Denki Kabushiki Kaisha Press contact semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1910736C3 (de) * 1969-03-03 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens
US4079409A (en) * 1973-11-27 1978-03-14 Licentia Patent-Verwaltungs G.M.B.H. Thyristor with pressure contacting
JPS57181131A (en) * 1981-04-30 1982-11-08 Toshiba Corp Pressure-contact type semiconductor device
DE3301666A1 (de) * 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung
GB2168529B (en) * 1984-12-18 1988-02-03 Marconi Electronic Devices Electrical contacts for semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264765A (ja) * 1995-03-27 1996-10-11 Hitachi Ltd パワーチップキャリア及びこれを用いたパワー半導体装置

Also Published As

Publication number Publication date
DE3616185A1 (de) 1987-11-19
EP0275261A1 (de) 1988-07-27
WO1987007081A1 (fr) 1987-11-19
DE3616185C2 (enExample) 1988-10-20

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