DE3616185C2 - - Google Patents

Info

Publication number
DE3616185C2
DE3616185C2 DE19863616185 DE3616185A DE3616185C2 DE 3616185 C2 DE3616185 C2 DE 3616185C2 DE 19863616185 DE19863616185 DE 19863616185 DE 3616185 A DE3616185 A DE 3616185A DE 3616185 C2 DE3616185 C2 DE 3616185C2
Authority
DE
Germany
Prior art keywords
metallization
insulating layer
emitter
zone
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19863616185
Other languages
German (de)
English (en)
Other versions
DE3616185A1 (de
Inventor
Werner Dipl.-Ing. Dr. 8500 Nuernberg De Tursky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron Elektronik GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik GmbH and Co KG filed Critical Semikron Elektronik GmbH and Co KG
Priority to DE19863616185 priority Critical patent/DE3616185A1/de
Priority to PCT/DE1987/000222 priority patent/WO1987007081A1/de
Priority to EP87902438A priority patent/EP0275261A1/de
Priority to JP62502901A priority patent/JPH01501027A/ja
Publication of DE3616185A1 publication Critical patent/DE3616185A1/de
Application granted granted Critical
Publication of DE3616185C2 publication Critical patent/DE3616185C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10W20/4441—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
    • H10W20/48—
    • H10W44/401—
    • H10W72/00—

Landscapes

  • Thyristors (AREA)
  • Die Bonding (AREA)
DE19863616185 1986-05-14 1986-05-14 Halbleiterbauelement Granted DE3616185A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19863616185 DE3616185A1 (de) 1986-05-14 1986-05-14 Halbleiterbauelement
PCT/DE1987/000222 WO1987007081A1 (fr) 1986-05-14 1987-05-13 Composant a semiconducteurs
EP87902438A EP0275261A1 (de) 1986-05-14 1987-05-13 Halbleiterbauelement
JP62502901A JPH01501027A (ja) 1986-05-14 1987-05-13 半導体構成要素

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19863616185 DE3616185A1 (de) 1986-05-14 1986-05-14 Halbleiterbauelement

Publications (2)

Publication Number Publication Date
DE3616185A1 DE3616185A1 (de) 1987-11-19
DE3616185C2 true DE3616185C2 (enExample) 1988-10-20

Family

ID=6300786

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863616185 Granted DE3616185A1 (de) 1986-05-14 1986-05-14 Halbleiterbauelement

Country Status (4)

Country Link
EP (1) EP0275261A1 (enExample)
JP (1) JPH01501027A (enExample)
DE (1) DE3616185A1 (enExample)
WO (1) WO1987007081A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19612838A1 (de) * 1995-11-13 1997-05-15 Asea Brown Boveri Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0389862A3 (de) * 1989-03-29 1990-12-19 Siemens Aktiengesellschaft Abschaltbarer Thyristor
JP3307145B2 (ja) * 1995-03-27 2002-07-24 株式会社日立製作所 パワーチップキャリア及びこれを用いたパワー半導体装置
EP1030355B1 (en) * 1998-09-10 2007-12-19 Mitsubishi Denki Kabushiki Kaisha Press contact semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079409A (en) * 1973-11-27 1978-03-14 Licentia Patent-Verwaltungs G.M.B.H. Thyristor with pressure contacting

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1910736C3 (de) * 1969-03-03 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens
JPS57181131A (en) * 1981-04-30 1982-11-08 Toshiba Corp Pressure-contact type semiconductor device
DE3301666A1 (de) * 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung
GB2168529B (en) * 1984-12-18 1988-02-03 Marconi Electronic Devices Electrical contacts for semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079409A (en) * 1973-11-27 1978-03-14 Licentia Patent-Verwaltungs G.M.B.H. Thyristor with pressure contacting

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DE-Z: Siemens Forschungs- und Entwicklungs-Bericht, Band 14, Nr. 2, 1985, S. 39-44 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19612838A1 (de) * 1995-11-13 1997-05-15 Asea Brown Boveri Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
DE3616185A1 (de) 1987-11-19
EP0275261A1 (de) 1988-07-27
JPH01501027A (ja) 1989-04-06
WO1987007081A1 (fr) 1987-11-19

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee