JPH0145750B2 - - Google Patents

Info

Publication number
JPH0145750B2
JPH0145750B2 JP14532881A JP14532881A JPH0145750B2 JP H0145750 B2 JPH0145750 B2 JP H0145750B2 JP 14532881 A JP14532881 A JP 14532881A JP 14532881 A JP14532881 A JP 14532881A JP H0145750 B2 JPH0145750 B2 JP H0145750B2
Authority
JP
Japan
Prior art keywords
thin film
electrode
memory element
semiconductor
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14532881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5846680A (ja
Inventor
Masataka Shirasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56145328A priority Critical patent/JPS5846680A/ja
Publication of JPS5846680A publication Critical patent/JPS5846680A/ja
Publication of JPH0145750B2 publication Critical patent/JPH0145750B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56145328A 1981-09-14 1981-09-14 記憶素子 Granted JPS5846680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56145328A JPS5846680A (ja) 1981-09-14 1981-09-14 記憶素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56145328A JPS5846680A (ja) 1981-09-14 1981-09-14 記憶素子

Publications (2)

Publication Number Publication Date
JPS5846680A JPS5846680A (ja) 1983-03-18
JPH0145750B2 true JPH0145750B2 (enrdf_load_stackoverflow) 1989-10-04

Family

ID=15382619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56145328A Granted JPS5846680A (ja) 1981-09-14 1981-09-14 記憶素子

Country Status (1)

Country Link
JP (1) JPS5846680A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2778977B2 (ja) * 1989-03-14 1998-07-23 株式会社東芝 半導体装置及びその製造方法
US5578846A (en) * 1995-03-17 1996-11-26 Evans, Jr.; Joseph T. Static ferroelectric memory transistor having improved data retention
JP3137880B2 (ja) * 1995-08-25 2001-02-26 ティーディーケイ株式会社 強誘電体薄膜、電子デバイスおよび強誘電体薄膜の製造方法
JP4247377B2 (ja) 2001-12-28 2009-04-02 独立行政法人産業技術総合研究所 薄膜トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPS5846680A (ja) 1983-03-18

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