JPH0142132B2 - - Google Patents
Info
- Publication number
- JPH0142132B2 JPH0142132B2 JP56054429A JP5442981A JPH0142132B2 JP H0142132 B2 JPH0142132 B2 JP H0142132B2 JP 56054429 A JP56054429 A JP 56054429A JP 5442981 A JP5442981 A JP 5442981A JP H0142132 B2 JPH0142132 B2 JP H0142132B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- wafer
- rays
- atmosphere
- atmosphere chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 71
- 238000012546 transfer Methods 0.000 claims description 18
- 239000012528 membrane Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000001307 helium Substances 0.000 description 19
- 229910052734 helium Inorganic materials 0.000 description 19
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 19
- 238000000605 extraction Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910052790 beryllium Inorganic materials 0.000 description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000013518 transcription Methods 0.000 description 2
- 230000035897 transcription Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56054429A JPS57169242A (en) | 1981-04-13 | 1981-04-13 | X-ray transferring device |
| US06/367,996 US4403336A (en) | 1981-04-13 | 1982-04-13 | X-Ray exposure apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56054429A JPS57169242A (en) | 1981-04-13 | 1981-04-13 | X-ray transferring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57169242A JPS57169242A (en) | 1982-10-18 |
| JPH0142132B2 true JPH0142132B2 (enExample) | 1989-09-11 |
Family
ID=12970468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56054429A Granted JPS57169242A (en) | 1981-04-13 | 1981-04-13 | X-ray transferring device |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4403336A (enExample) |
| JP (1) | JPS57169242A (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59101833A (ja) * | 1982-12-03 | 1984-06-12 | Hitachi Ltd | X線露光装置 |
| EP0121969A3 (en) * | 1983-03-15 | 1988-01-20 | Micronix Partners | Lithography system |
| US4516253A (en) * | 1983-03-15 | 1985-05-07 | Micronix Partners | Lithography system |
| US4514858A (en) * | 1983-03-15 | 1985-04-30 | Micronix Partners | Lithography system |
| US4525852A (en) * | 1983-03-15 | 1985-06-25 | Micronix Partners | Alignment apparatus |
| JPS61161719A (ja) * | 1985-01-11 | 1986-07-22 | Canon Inc | 露光装置 |
| JPS60154527A (ja) * | 1984-01-24 | 1985-08-14 | Canon Inc | 露光装置 |
| JPS60178627A (ja) * | 1984-02-24 | 1985-09-12 | Canon Inc | X線転写装置 |
| JPS60198726A (ja) * | 1984-03-23 | 1985-10-08 | Hitachi Ltd | X線露光装置の露光量調整方法と装置 |
| JPS6167917A (ja) * | 1984-09-11 | 1986-04-08 | Nippon Telegr & Teleph Corp <Ntt> | X線取り出し筒 |
| JPS6197918A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | X線露光装置 |
| JPS62237727A (ja) * | 1986-04-09 | 1987-10-17 | Hitachi Ltd | X線露光装置およびその方法 |
| JPS63119233A (ja) * | 1986-11-07 | 1988-05-23 | Hitachi Ltd | X線転写装置 |
| US4803712A (en) * | 1987-01-20 | 1989-02-07 | Hitachi, Ltd. | X-ray exposure system |
| EP0358521B1 (en) * | 1988-09-09 | 1995-06-07 | Canon Kabushiki Kaisha | An exposure apparatus |
| JP2766935B2 (ja) * | 1989-10-20 | 1998-06-18 | キヤノン株式会社 | X線露光装置 |
| US7198619B2 (en) * | 2002-03-26 | 2007-04-03 | Ultradent Products, Inc. | Valve syringe |
| US7052808B2 (en) * | 2003-02-11 | 2006-05-30 | Infineon Technologies Ag | Transmission mask with differential attenuation to improve ISO-dense proximity |
| JP4829006B2 (ja) * | 2005-05-17 | 2011-11-30 | ウシオ電機株式会社 | 露光装置 |
| US9316622B2 (en) * | 2013-05-08 | 2016-04-19 | Hamilton Sundstrand Corporation | Microwave vibration sensors |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4119855A (en) * | 1977-07-08 | 1978-10-10 | Massachusetts Institute Of Technology | Non vacuum soft x-ray lithographic source |
| US4185202A (en) * | 1977-12-05 | 1980-01-22 | Bell Telephone Laboratories, Incorporated | X-ray lithography |
-
1981
- 1981-04-13 JP JP56054429A patent/JPS57169242A/ja active Granted
-
1982
- 1982-04-13 US US06/367,996 patent/US4403336A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4403336A (en) | 1983-09-06 |
| JPS57169242A (en) | 1982-10-18 |
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