JPH0132670B2 - - Google Patents

Info

Publication number
JPH0132670B2
JPH0132670B2 JP55153917A JP15391780A JPH0132670B2 JP H0132670 B2 JPH0132670 B2 JP H0132670B2 JP 55153917 A JP55153917 A JP 55153917A JP 15391780 A JP15391780 A JP 15391780A JP H0132670 B2 JPH0132670 B2 JP H0132670B2
Authority
JP
Japan
Prior art keywords
conductive
conductive member
electrode
semiconductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55153917A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5778173A (en
Inventor
Takayuki Wakui
Komei Yatsuno
Mamoru Sawahata
Tasao Soga
Michio Oogami
Tomiro Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15391780A priority Critical patent/JPS5778173A/ja
Priority to US06/315,905 priority patent/US4516149A/en
Priority to EP19810305142 priority patent/EP0051459B1/en
Priority to DE8181305142T priority patent/DE3173587D1/de
Publication of JPS5778173A publication Critical patent/JPS5778173A/ja
Publication of JPH0132670B2 publication Critical patent/JPH0132670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/695—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/701—Tape-automated bond [TAB] connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/077—Connecting of TAB connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP15391780A 1980-11-04 1980-11-04 Semiconductor device and manufacture thereof Granted JPS5778173A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15391780A JPS5778173A (en) 1980-11-04 1980-11-04 Semiconductor device and manufacture thereof
US06/315,905 US4516149A (en) 1980-11-04 1981-10-28 Semiconductor device having ribbon electrode structure and method for fabricating the same
EP19810305142 EP0051459B1 (en) 1980-11-04 1981-10-29 A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same
DE8181305142T DE3173587D1 (en) 1980-11-04 1981-10-29 A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15391780A JPS5778173A (en) 1980-11-04 1980-11-04 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5778173A JPS5778173A (en) 1982-05-15
JPH0132670B2 true JPH0132670B2 (https=) 1989-07-10

Family

ID=15572915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15391780A Granted JPS5778173A (en) 1980-11-04 1980-11-04 Semiconductor device and manufacture thereof

Country Status (4)

Country Link
US (1) US4516149A (https=)
EP (1) EP0051459B1 (https=)
JP (1) JPS5778173A (https=)
DE (1) DE3173587D1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3335836A1 (de) * 1983-10-01 1985-04-18 Brown, Boveri & Cie Ag, 6800 Mannheim Kontaktelektrode fuer leistungshalbleiterbauelement
JPS61218151A (ja) * 1985-03-23 1986-09-27 Hitachi Ltd 半導体装置
US4814855A (en) * 1986-04-29 1989-03-21 International Business Machines Corporation Balltape structure for tape automated bonding, multilayer packaging, universal chip interconnection and energy beam processes for manufacturing balltape
JPH0658959B2 (ja) * 1987-01-29 1994-08-03 富士電機株式会社 ゲ−ト・タ−ン・オフ・サイリスタ
EP0308667B1 (de) * 1987-09-23 1994-05-25 Siemens Aktiengesellschaft Absaugelektrode zur Verkürzung der Ausschaltzeit bei einem Halbleiterbauelement
JPH0267731A (ja) * 1988-09-02 1990-03-07 Toshiba Corp はんだバンプ形半導体装置とその製造方法
EP0520294B1 (de) * 1991-06-24 1998-08-26 Siemens Aktiengesellschaft Halbleiterbauelement und Verfahren zu seiner Herstellung
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement
EP0674380B1 (en) * 1994-03-24 1999-05-06 Fuji Electric Co. Ltd. Parallel connection structure for flat type semiconductor switches
US5670828A (en) * 1995-02-21 1997-09-23 Advanced Micro Devices, Inc. Tunneling technology for reducing intra-conductive layer capacitance
JPH09321175A (ja) * 1996-05-30 1997-12-12 Oki Electric Ind Co Ltd マイクロ波回路及びチップ
FR2759493B1 (fr) * 1997-02-12 2001-01-26 Motorola Semiconducteurs Dispositif de puissance a semiconducteur
GB0318146D0 (en) * 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL233303A (https=) * 1957-11-30
DE1104618B (de) * 1959-09-23 1961-04-13 Siemens Ag Halbleiteranordnung mit einkristallinem Grundkoerper mit mindestens einem pn-UEbergang und mit mehreren Elektroden
US3355636A (en) * 1965-06-29 1967-11-28 Rca Corp High power, high frequency transistor
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3689991A (en) * 1968-03-01 1972-09-12 Gen Electric A method of manufacturing a semiconductor device utilizing a flexible carrier
US3943546A (en) * 1968-08-01 1976-03-09 Telefunken Patentverwertungsgesellschaft M.B.H. Transistor
GB1237148A (en) * 1968-08-20 1971-06-30 Standard Telephones Cables Ltd Improvements in transistors
US3601667A (en) * 1968-12-09 1971-08-24 Gen Electric A semiconductor device with a heat sink having a foot portion
DE1816439C3 (de) * 1968-12-21 1978-04-20 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Leistungstransistor
US4028722A (en) * 1970-10-13 1977-06-07 Motorola, Inc. Contact bonded packaged integrated circuit
US3808474A (en) * 1970-10-29 1974-04-30 Texas Instruments Inc Semiconductor devices
US3900771A (en) * 1970-11-25 1975-08-19 Gerhard Krause Transistor with high current density
NL163370C (nl) * 1972-04-28 1980-08-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon.
US3781596A (en) * 1972-07-07 1973-12-25 R Galli Semiconductor chip carriers and strips thereof
DE2409312C3 (de) * 1974-02-27 1981-01-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung
JPS527573U (https=) * 1975-07-01 1977-01-19
US4097890A (en) * 1976-06-23 1978-06-27 Hewlett-Packard Company Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture
JPS5317274A (en) * 1976-08-02 1978-02-17 Hitachi Ltd Electrode structure of semiconductor element
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
JPS5512791A (en) * 1978-07-14 1980-01-29 Nec Corp Semiconductor device
US4240595A (en) * 1979-01-26 1980-12-23 National Tube & Reel Corporation End cap for cloth reel
JPS55115363A (en) * 1979-02-26 1980-09-05 Mitsubishi Electric Corp Semiconductor device
US4380042A (en) * 1981-02-23 1983-04-12 Angelucci Sr Thomas L Printed circuit lead carrier tape

Also Published As

Publication number Publication date
US4516149A (en) 1985-05-07
EP0051459B1 (en) 1986-01-22
JPS5778173A (en) 1982-05-15
EP0051459A3 (en) 1983-02-09
EP0051459A2 (en) 1982-05-12
DE3173587D1 (en) 1986-03-06

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