JPH0127982B2 - - Google Patents

Info

Publication number
JPH0127982B2
JPH0127982B2 JP59052822A JP5282284A JPH0127982B2 JP H0127982 B2 JPH0127982 B2 JP H0127982B2 JP 59052822 A JP59052822 A JP 59052822A JP 5282284 A JP5282284 A JP 5282284A JP H0127982 B2 JPH0127982 B2 JP H0127982B2
Authority
JP
Japan
Prior art keywords
powder
melting point
low melting
zirconium silicate
point glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59052822A
Other languages
English (en)
Other versions
JPS60204637A (ja
Inventor
Ichiro Matsura
Fumio Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP59052822A priority Critical patent/JPS60204637A/ja
Priority to US06/713,000 priority patent/US4621064A/en
Priority to DE19853509955 priority patent/DE3509955A1/de
Publication of JPS60204637A publication Critical patent/JPS60204637A/ja
Publication of JPH0127982B2 publication Critical patent/JPH0127982B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • C03C8/245—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders containing more than 50% lead oxide, by weight
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Glass Compositions (AREA)

Description

【発明の詳細な説明】
本発明は低融点封着用組成物、より具体的には
アルミナを使用したICパツケージの気密封着に
特に適した低融点封着用組成物に関するものであ
る。 近年、ICパツケージ用封着材としては、封着
温度が低く且つ短時間で気密封着できるものが要
望され、従来から非晶質の低融点ガラスに低膨張
性耐火フイラー粉末を加えた封着材が数多く提供
されている。 しかしながら、これらの封着材は各々欠点を有
している。例えば、特公昭56―49861の低融点ガ
ラス粉末とチタン酸鉛粉末と珪酸ジルコニウム粉
末とから成る封着材は、機械的強度や熱衝撃強度
は大きいが、誘電率が大きいため、メモリーのよ
うな高密度のシリコン素子を搭載するパツケージ
の封着には適していない。また特開昭56―69242
の低融点ガラス粉末とコーデイエライト粉末等か
ら成る封着材は、機械的強度や熱衝撃強度が小さ
いため、熱衝撃試験で気密リークを生じ易い。更
に特開昭58―151346の低融点ガラス粉末と亜鉛物
質粉末と錫物質粉末とから成る封着材は、耐酸性
が小さく、錫メツキ工程でブリツジを起し易い。 本発明の目的は、低温度で短時間に封着でき熱
衝撃強度、機械的強度が大きく且つ誘電率の小さ
い新規な封着用組成物を提供することである。 本発明の封着用組成物は、屈伏点が350℃以下
の非晶質のPbO―B2O3系、具体的には、重量比
でPbO70〜90％、B2O310〜15％、SiO20〜10％、
ZnO0〜５％（Al2O30〜５％）含有する低融点ガ
ラス粉末に不活性亜鉛物質粉末と珪酸ジルコニウ
ム粉末とを混合してなるもので、その混合割合
は、重量比で、低融点ガラス粉末50〜80％、不活
性亜鉛物質粉末１〜35％、珪酸ジルコニウム粉末
１〜35％の範囲にある。低融点ガラス粉末、不活
性亜鉛物質粉末、珪酸ジルコニウム粉末の混合比
を上記のように限定したのは次の理由による。低
融点ガラスが50％に満たない場合は封着用組成物
の流動性が悪く450℃以下で封着できない。80％
を越えると、熱膨張係数が大きくなり過ぎて熱衝
撃強度が小さくなる。不活性亜鉛物質粉末、合成
珪酸ジルコニウム粉末の夫々が35％を超える場合
は流動性が悪くなり、450℃以下で封着できず、
１％に満たない場合は十分な気密性が得られな
い。 尚、上記PbO―B2O3系低融点ガラス粉末には
PbO，B2O3，SiO2，ZnO（Al2O3）の成分以外に
も（Al2O3）、PbF2，Bi2O3等、他成分を５％ま
で含有させることが可能である。 以下に本発明の実施例について説明する。 非晶質のPbO―B2O2系低融点ガラスの実施例
を第１表に示す。 第１表 ガラスＡ ガラスＢ PbO 84.8 84.3 B2O2 12.3 11.9 SiO2 1.0 1.0 ZnO 1.4 2.8 Al2O2 0.5 ― 屈伏点(℃) 327 325 第１表に示した低融点ガラスは、光明丹、硼
酸、石粉、亜鉛華、および水酸化アルミニウム
を、第１表に示す組成になるように調合、混合
し、白金ルツボに入れて、電気炉で約900℃、30
分間溶融した後、薄板状に成型し、アルミナボー
ルミルで粉砕し150メツシユのステンレス篩を通
過したものを用いた。 不活性亜鉛物質は、その構成成分が、重量比
で、ZnO68〜75％、SiO223〜28％、Al2O30.1〜８
％からなるセラミツクであり、実施例では重量比
で、ZnO70.6％、SiO224.7％、Al2O24.7％になる
ように亜鉛華、光学石粉、及び酸化アルミニウム
を調合、混合し、1440℃で15時間焼成した後、ア
ルミナボールミルで粉砕し、250メツシユのステ
ンレス篩を通したものを用いた。このものの熱膨
張係数は15×10-7／℃であつた。 珪酸ジルコニウムは、天然のジルコンサンド
を、一旦ソーダ分解、塩酸溶解後、濃縮結晶化を
繰り返して、Ｕ，Thの極めて少ないオキシ塩化
ジルコニウムにし、更にアルカリ中和、乾燥によ
つてできた酸化ジルコニウムに石粉を加えて硫酸
ソーダなどの融剤を使用して焙焼し再び珪酸ジル
コニウムにし、250メツシユ篩を通過した合成物
を用いる。このものの熱膨張係数は約50×10-7／
℃であつた。 上記のようにして得た低融点ガラス粉末、不活
性亜鉛物質粉末、合成珪酸ジルコニウム粉末を第
２表の実施例に示す割合に混合し、通常行なわれ
ているようにピークルを添加してペーストを作成
し、アルミナセラミツクに印刷して封着した。得
られたICパツケージは第２表に示すように良好
な機械的強度、熱衝撃強度及び小さな誘電率を示
した。 機械的強度はアルミナセラミツクの封着部の長
手方向へ剪断力を加えることによつて、破壊させ
るに必要な荷重を評価する剪断強度テストで測定
した。 熱衝撃強度はミル規格（MIL―STD―883B，
Method 1011.2；Condition Ｃ）により、上記パ
ツケージを150℃から−65℃へ、−65℃から150℃
へと15回繰り返して熱衝撃を与えた後、ヘリウム
デイテクターによつてパツケージの気密リーク値
を測定して評価した。 又、誘電率は1MHz、25℃の条件下で測定した。
【表】
【表】 したものである。

Claims (1)

  1. 【特許請求の範囲】 １ 屈伏点が350℃以下の非晶質のPbO―B2O3系
    低融点ガラス粉末と不活性亜鉛物質粉末と珪酸ジ
    ルコニウム粉末とから成り、これらの割合が重量
    比で 低融点ガラス粉末 50〜80％ 不活性亜鉛物質粉末 １〜35％ 珪酸ジルコニウム粉末 １〜35％ の範囲にあり、低融点ガラス粉末は重量比で
    PbO70〜90％、B2O310〜15％、SiO20〜10％、
    ZnO0〜５％の範囲にあり、不活性亜鉛物質粉末
    は、重量比でZnO68〜75％、SiO223〜28％、
    Al2O30.1〜８％の範囲にあり、珪酸ジルコニウム
    粉末はＵ，Th不純物が除去された合成物である
    低融点封着用組成物。 ２ 屈伏点が350℃以下の非晶質のPbO・B2O3系
    低融点ガラス粉末と不活性亜鉛物質粉末と珪酸ジ
    ルコニウム粉末とから成り、これらの割合が重量
    比で 低融点ガラス粉末 60〜75％ 不活性亜鉛物質粉末 10〜30％ 珪酸ジルコニウム粉末 ２〜20％ の範囲にあり、低融点ガラス粉末は重量比で
    PbO70〜90％、B2O310〜15％、SiO20〜10％、
    ZnO0〜５％の範囲にあり、不活性亜鉛物質粉末
    は、重量比でZnO68〜75％、SiO223〜28％、
    Al2O30.1〜８％の範囲にあり、珪酸ジルコニウム
    粉末はＵ，Th不純物が除去された合成物である
    特許請求の範囲第１項記載の低融点封着用組成
    物。
JP59052822A 1984-03-19 1984-03-19 低融点封着用組成物 Granted JPS60204637A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59052822A JPS60204637A (ja) 1984-03-19 1984-03-19 低融点封着用組成物
US06/713,000 US4621064A (en) 1984-03-19 1985-03-18 Low temperature sealing composition with synthetic zircon
DE19853509955 DE3509955A1 (de) 1984-03-19 1985-03-19 Niedrigtemperatur-abdichtungszusammensetzung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59052822A JPS60204637A (ja) 1984-03-19 1984-03-19 低融点封着用組成物

Publications (2)

Publication Number Publication Date
JPS60204637A JPS60204637A (ja) 1985-10-16
JPH0127982B2 true JPH0127982B2 (ja) 1989-05-31

Family

ID=12925539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59052822A Granted JPS60204637A (ja) 1984-03-19 1984-03-19 低融点封着用組成物

Country Status (3)

Country Link
US (1) US4621064A (ja)
JP (1) JPS60204637A (ja)
DE (1) DE3509955A1 (ja)

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US4725480A (en) * 1985-09-24 1988-02-16 John Fluke Mfg. Co., Inc. Hermetically sealed electronic component
JPS62191442A (ja) * 1986-02-17 1987-08-21 Nippon Electric Glass Co Ltd 低融点封着用組成物
US4696909A (en) * 1986-04-07 1987-09-29 Owens-Illinois Television Products Inc. Platinum corrosion reducing premelted oxide compositions for lead containing solder glasses
US4883777A (en) * 1988-04-07 1989-11-28 Nippon Electric Glass Company, Limited Sealing glass composition with filler containing Fe and W partially substituted for Ti in PbTiO3 filler
US5034358A (en) * 1989-05-05 1991-07-23 Kaman Sciences Corporation Ceramic material and method for producing the same
US5510300A (en) * 1992-12-16 1996-04-23 Samsung Corning Co., Ltd. Sealing glass compositions using ceramic composite filler
JPH08139230A (ja) * 1994-11-11 1996-05-31 Sumitomo Kinzoku Ceramics:Kk セラミック回路基板とその製造方法
KR970011336B1 (ko) * 1995-03-31 1997-07-09 삼성코닝 주식회사 접착용 유리조성물
JP3273773B2 (ja) * 1999-08-12 2002-04-15 イビデン株式会社 半導体製造・検査装置用セラミックヒータ、半導体製造・検査装置用静電チャックおよびウエハプローバ用チャックトップ
TW512645B (en) * 2000-07-25 2002-12-01 Ibiden Co Ltd Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clamp holder, and substrate for wafer prober

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Publication number Priority date Publication date Assignee Title
JPS6146421A (ja) * 1984-08-10 1986-03-06 Mitsubishi Motors Corp エンジン

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Also Published As

Publication number Publication date
US4621064A (en) 1986-11-04
JPS60204637A (ja) 1985-10-16
DE3509955A1 (de) 1985-09-19
DE3509955C2 (ja) 1993-05-13

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