JPS56114364A - Composite for covering semiconductor device - Google Patents
Composite for covering semiconductor deviceInfo
- Publication number
- JPS56114364A JPS56114364A JP1735580A JP1735580A JPS56114364A JP S56114364 A JPS56114364 A JP S56114364A JP 1735580 A JP1735580 A JP 1735580A JP 1735580 A JP1735580 A JP 1735580A JP S56114364 A JPS56114364 A JP S56114364A
- Authority
- JP
- Japan
- Prior art keywords
- low melting
- melting point
- heat
- composite
- noncrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
PURPOSE:To obtain the low melting point semiconductor covering composite superior in electrical characteristic and heat-proof impulse property by a method wherein low melting point glass and Willemite powders of noncrystalline PbO-B2O3-SiO2 system whose submitting point is at 360-500 deg.C are mixed up in a prescribed weight ration and melted by applying heat to be made slurrylike. CONSTITUTION:The low melting point glass of 40-80wt% of the noncrystalline PbO-B2O3-SiO2 whose submitting point is at more than 300 deg.C and less than 500 deg.C and the Willemite powder of 20-60wt% which is partially replaced by titani acid lead powder as much as 20 are mixed and heated at about 110 deg.C for 60min to be melted is a platinum pot. Subsequently, those are made powders passing through a 350-mesh and slurry-wise by adding demineralized water after being cooled and molded in plate-shape. With the use of the thus obtained composite as the one for covering the semiconductor the reverse leakage current is restrained under 1muA even in the withstand voltage test at 1,000V, and no abnormality appears even in the heat impulse test at 0-300 deg.C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1735580A JPS56114364A (en) | 1980-02-13 | 1980-02-13 | Composite for covering semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1735580A JPS56114364A (en) | 1980-02-13 | 1980-02-13 | Composite for covering semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56114364A true JPS56114364A (en) | 1981-09-08 |
JPS6146420B2 JPS6146420B2 (en) | 1986-10-14 |
Family
ID=11941732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1735580A Granted JPS56114364A (en) | 1980-02-13 | 1980-02-13 | Composite for covering semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56114364A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4621064A (en) * | 1984-03-19 | 1986-11-04 | Nippon Electric Glass Company, Limited | Low temperature sealing composition with synthetic zircon |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0695030B2 (en) * | 1988-12-09 | 1994-11-24 | 株式会社日立製作所 | Electromagnetic flowmeter detector |
-
1980
- 1980-02-13 JP JP1735580A patent/JPS56114364A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4621064A (en) * | 1984-03-19 | 1986-11-04 | Nippon Electric Glass Company, Limited | Low temperature sealing composition with synthetic zircon |
Also Published As
Publication number | Publication date |
---|---|
JPS6146420B2 (en) | 1986-10-14 |
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