JPH0127589B2 - - Google Patents
Info
- Publication number
- JPH0127589B2 JPH0127589B2 JP53147605A JP14760578A JPH0127589B2 JP H0127589 B2 JPH0127589 B2 JP H0127589B2 JP 53147605 A JP53147605 A JP 53147605A JP 14760578 A JP14760578 A JP 14760578A JP H0127589 B2 JPH0127589 B2 JP H0127589B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- contact hole
- gate electrode
- source
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 22
- 230000000295 complement effect Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14760578A JPS5574175A (en) | 1978-11-29 | 1978-11-29 | Preparing interpolation type mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14760578A JPS5574175A (en) | 1978-11-29 | 1978-11-29 | Preparing interpolation type mos semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574175A JPS5574175A (en) | 1980-06-04 |
| JPH0127589B2 true JPH0127589B2 (de) | 1989-05-30 |
Family
ID=15434100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14760578A Granted JPS5574175A (en) | 1978-11-29 | 1978-11-29 | Preparing interpolation type mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574175A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5785226A (en) * | 1980-11-18 | 1982-05-27 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS5810856A (ja) * | 1981-07-10 | 1983-01-21 | Nec Corp | 相補型半導体集積回路装置の製造方法 |
| JPS5821858A (ja) * | 1981-07-31 | 1983-02-08 | Nec Corp | 半導体装置の製造方法 |
| JPS5885559A (ja) * | 1981-11-18 | 1983-05-21 | Nec Corp | Ｃｍｏｓ型半導体集積回路装置 |
| KR930009127B1 (ko) * | 1991-02-25 | 1993-09-23 | 삼성전자 주식회사 | 스택형캐패시터를구비하는반도체메모리장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51116675A (en) * | 1975-04-05 | 1976-10-14 | Fujitsu Ltd | Manufacturing method for a semiconductor device |
| JPS51134566A (en) * | 1975-05-17 | 1976-11-22 | Fujitsu Ltd | Semiconductor unit manufacturing process |
| JPS51137384A (en) * | 1975-05-23 | 1976-11-27 | Nippon Telegr & Teleph Corp <Ntt> | Semi conductor device manufacturing method |
-
1978
- 1978-11-29 JP JP14760578A patent/JPS5574175A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51116675A (en) * | 1975-04-05 | 1976-10-14 | Fujitsu Ltd | Manufacturing method for a semiconductor device |
| JPS51134566A (en) * | 1975-05-17 | 1976-11-22 | Fujitsu Ltd | Semiconductor unit manufacturing process |
| JPS51137384A (en) * | 1975-05-23 | 1976-11-27 | Nippon Telegr & Teleph Corp <Ntt> | Semi conductor device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5574175A (en) | 1980-06-04 |
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