JPH01255262A - Mosキャパシタ - Google Patents
MosキャパシタInfo
- Publication number
- JPH01255262A JPH01255262A JP8356588A JP8356588A JPH01255262A JP H01255262 A JPH01255262 A JP H01255262A JP 8356588 A JP8356588 A JP 8356588A JP 8356588 A JP8356588 A JP 8356588A JP H01255262 A JPH01255262 A JP H01255262A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity region
- mos capacitor
- type impurity
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8356588A JPH01255262A (ja) | 1988-04-05 | 1988-04-05 | Mosキャパシタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8356588A JPH01255262A (ja) | 1988-04-05 | 1988-04-05 | Mosキャパシタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01255262A true JPH01255262A (ja) | 1989-10-12 |
| JPH0580153B2 JPH0580153B2 (enrdf_load_stackoverflow) | 1993-11-08 |
Family
ID=13806038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8356588A Granted JPH01255262A (ja) | 1988-04-05 | 1988-04-05 | Mosキャパシタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01255262A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336922A (en) * | 1990-07-31 | 1994-08-09 | Nec Corporation | Device comprising lower and upper silicon layers as capacitor electrodes and method of manufacturing such devices |
| EP0656657A1 (fr) * | 1993-12-01 | 1995-06-07 | Matra Mhs | Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs |
| JPH10163421A (ja) * | 1996-11-29 | 1998-06-19 | Sanyo Electric Co Ltd | 半導体集積回路 |
| US5801410A (en) * | 1996-06-29 | 1998-09-01 | Samsung Electronics Co., Ltd. | Ferroelectric capacitors including extended electrodes |
| EP0908950A3 (de) * | 1997-08-20 | 2001-05-09 | Siemens Aktiengesellschaft | Integrierte Schaltung |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115359A (ja) * | 1984-07-02 | 1986-01-23 | Rohm Co Ltd | 半導体装置 |
| JPS62226655A (ja) * | 1986-03-28 | 1987-10-05 | Toshiba Corp | 半導体装置 |
-
1988
- 1988-04-05 JP JP8356588A patent/JPH01255262A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115359A (ja) * | 1984-07-02 | 1986-01-23 | Rohm Co Ltd | 半導体装置 |
| JPS62226655A (ja) * | 1986-03-28 | 1987-10-05 | Toshiba Corp | 半導体装置 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336922A (en) * | 1990-07-31 | 1994-08-09 | Nec Corporation | Device comprising lower and upper silicon layers as capacitor electrodes and method of manufacturing such devices |
| EP0656657A1 (fr) * | 1993-12-01 | 1995-06-07 | Matra Mhs | Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs |
| FR2713399A1 (fr) * | 1993-12-01 | 1995-06-09 | Matra Mhs | Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs. |
| US5801410A (en) * | 1996-06-29 | 1998-09-01 | Samsung Electronics Co., Ltd. | Ferroelectric capacitors including extended electrodes |
| JPH10163421A (ja) * | 1996-11-29 | 1998-06-19 | Sanyo Electric Co Ltd | 半導体集積回路 |
| EP0908950A3 (de) * | 1997-08-20 | 2001-05-09 | Siemens Aktiengesellschaft | Integrierte Schaltung |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0580153B2 (enrdf_load_stackoverflow) | 1993-11-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071108 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081108 Year of fee payment: 15 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081108 Year of fee payment: 15 |