JPH01255262A - Ｍｏｓキャパシタ - Google Patents

Ｍｏｓキャパシタ

Info

Publication number
JPH01255262A
JPH01255262A JP8356588A JP8356588A JPH01255262A JP H01255262 A JPH01255262 A JP H01255262A JP 8356588 A JP8356588 A JP 8356588A JP 8356588 A JP8356588 A JP 8356588A JP H01255262 A JPH01255262 A JP H01255262A
Authority
JP
Japan
Prior art keywords
layer
impurity
impurity region
region
mos capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8356588A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0580153B2 (enrdf_load_stackoverflow
Inventor
Makoto Monoi
誠 物井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP8356588A priority Critical patent/JPH01255262A/ja
Publication of JPH01255262A publication Critical patent/JPH01255262A/ja
Publication of JPH0580153B2 publication Critical patent/JPH0580153B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP8356588A 1988-04-05 1988-04-05 Ｍｏｓキャパシタ Granted JPH01255262A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8356588A JPH01255262A (ja) 1988-04-05 1988-04-05 Ｍｏｓキャパシタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8356588A JPH01255262A (ja) 1988-04-05 1988-04-05 Ｍｏｓキャパシタ

Publications (2)

Publication Number Publication Date
JPH01255262A true JPH01255262A (ja) 1989-10-12
JPH0580153B2 JPH0580153B2 (enrdf_load_stackoverflow) 1993-11-08

Family

ID=13806038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8356588A Granted JPH01255262A (ja) 1988-04-05 1988-04-05 Ｍｏｓキャパシタ

Country Status (1)

Country Link
JP (1) JPH01255262A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336922A (en) * 1990-07-31 1994-08-09 Nec Corporation Device comprising lower and upper silicon layers as capacitor electrodes and method of manufacturing such devices
EP0656657A1 (fr) * 1993-12-01 1995-06-07 Matra Mhs Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs
JPH10163421A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 半導体集積回路
US5801410A (en) * 1996-06-29 1998-09-01 Samsung Electronics Co., Ltd. Ferroelectric capacitors including extended electrodes
EP0908950A3 (de) * 1997-08-20 2001-05-09 Siemens Aktiengesellschaft Integrierte Schaltung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115359A (ja) * 1984-07-02 1986-01-23 Rohm Co Ltd 半導体装置
JPS62226655A (ja) * 1986-03-28 1987-10-05 Toshiba Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115359A (ja) * 1984-07-02 1986-01-23 Rohm Co Ltd 半導体装置
JPS62226655A (ja) * 1986-03-28 1987-10-05 Toshiba Corp 半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336922A (en) * 1990-07-31 1994-08-09 Nec Corporation Device comprising lower and upper silicon layers as capacitor electrodes and method of manufacturing such devices
EP0656657A1 (fr) * 1993-12-01 1995-06-07 Matra Mhs Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs
FR2713399A1 (fr) * 1993-12-01 1995-06-09 Matra Mhs Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs.
US5801410A (en) * 1996-06-29 1998-09-01 Samsung Electronics Co., Ltd. Ferroelectric capacitors including extended electrodes
JPH10163421A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 半導体集積回路
EP0908950A3 (de) * 1997-08-20 2001-05-09 Siemens Aktiengesellschaft Integrierte Schaltung

Also Published As

Publication number Publication date
JPH0580153B2 (enrdf_load_stackoverflow) 1993-11-08

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