JPH01255234A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH01255234A
JPH01255234A JP63083802A JP8380288A JPH01255234A JP H01255234 A JPH01255234 A JP H01255234A JP 63083802 A JP63083802 A JP 63083802A JP 8380288 A JP8380288 A JP 8380288A JP H01255234 A JPH01255234 A JP H01255234A
Authority
JP
Japan
Prior art keywords
layer
semiconductor element
electrode pad
passivation film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63083802A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0533823B2 (enExample
Inventor
Takashi Shibata
隆 柴田
Osamu Usuda
修 薄田
Isamu Wada
和田　勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63083802A priority Critical patent/JPH01255234A/ja
Publication of JPH01255234A publication Critical patent/JPH01255234A/ja
Publication of JPH0533823B2 publication Critical patent/JPH0533823B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H10W72/9226—Bond pads being integral with underlying chip-level interconnections with via interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Wire Bonding (AREA)
JP63083802A 1988-04-05 1988-04-05 半導体装置 Granted JPH01255234A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63083802A JPH01255234A (ja) 1988-04-05 1988-04-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63083802A JPH01255234A (ja) 1988-04-05 1988-04-05 半導体装置

Publications (2)

Publication Number Publication Date
JPH01255234A true JPH01255234A (ja) 1989-10-12
JPH0533823B2 JPH0533823B2 (enExample) 1993-05-20

Family

ID=13812792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63083802A Granted JPH01255234A (ja) 1988-04-05 1988-04-05 半導体装置

Country Status (1)

Country Link
JP (1) JPH01255234A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2362510B (en) * 1999-12-20 2003-07-02 Lucent Technologies Inc Wire bonding method for copper interconnects in semiconductor devices
DE102006044691A1 (de) * 2006-09-22 2008-03-27 Infineon Technologies Ag Elektronisches Bauteil und Verfahren zum Herstellen
JP2010258286A (ja) * 2009-04-27 2010-11-11 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2013089630A (ja) * 2011-10-13 2013-05-13 Hitachi Chemical Co Ltd 半導体パッケージ及びその製造方法
JP2014021065A (ja) * 2012-07-23 2014-02-03 Denso Corp 物理量センサ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212169A (ja) * 1982-06-04 1983-12-09 Toshiba Corp 三層電極構造を有する半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212169A (ja) * 1982-06-04 1983-12-09 Toshiba Corp 三層電極構造を有する半導体装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2362510B (en) * 1999-12-20 2003-07-02 Lucent Technologies Inc Wire bonding method for copper interconnects in semiconductor devices
US6790757B1 (en) 1999-12-20 2004-09-14 Agere Systems Inc. Wire bonding method for copper interconnects in semiconductor devices
DE102006044691A1 (de) * 2006-09-22 2008-03-27 Infineon Technologies Ag Elektronisches Bauteil und Verfahren zum Herstellen
US8076238B2 (en) 2006-09-22 2011-12-13 Infineon Technologies Ag Electronic device and method for production
DE102006044691B4 (de) * 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
US8552571B2 (en) 2006-09-22 2013-10-08 Infineon Technologies Ag Electronic device and method for production
US9368447B2 (en) 2006-09-22 2016-06-14 Infineon Technologies Ag Electronic device and method for production
US9754912B2 (en) 2006-09-22 2017-09-05 Infineon Technologies Ag Electronic device and method for production
JP2010258286A (ja) * 2009-04-27 2010-11-11 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2013089630A (ja) * 2011-10-13 2013-05-13 Hitachi Chemical Co Ltd 半導体パッケージ及びその製造方法
JP2014021065A (ja) * 2012-07-23 2014-02-03 Denso Corp 物理量センサ

Also Published As

Publication number Publication date
JPH0533823B2 (enExample) 1993-05-20

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