JPH01255234A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPH01255234A JPH01255234A JP63083802A JP8380288A JPH01255234A JP H01255234 A JPH01255234 A JP H01255234A JP 63083802 A JP63083802 A JP 63083802A JP 8380288 A JP8380288 A JP 8380288A JP H01255234 A JPH01255234 A JP H01255234A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor element
- electrode pad
- passivation film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H10W72/90—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H10W72/075—
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- H10W72/07532—
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- H10W72/07533—
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- H10W72/07551—
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- H10W72/50—
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- H10W72/536—
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- H10W72/5363—
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- H10W72/5525—
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- H10W72/59—
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- H10W72/9226—
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- H10W72/923—
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- H10W72/934—
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- H10W72/952—
Landscapes
- Wire Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63083802A JPH01255234A (ja) | 1988-04-05 | 1988-04-05 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63083802A JPH01255234A (ja) | 1988-04-05 | 1988-04-05 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01255234A true JPH01255234A (ja) | 1989-10-12 |
| JPH0533823B2 JPH0533823B2 (enExample) | 1993-05-20 |
Family
ID=13812792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63083802A Granted JPH01255234A (ja) | 1988-04-05 | 1988-04-05 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01255234A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2362510B (en) * | 1999-12-20 | 2003-07-02 | Lucent Technologies Inc | Wire bonding method for copper interconnects in semiconductor devices |
| DE102006044691A1 (de) * | 2006-09-22 | 2008-03-27 | Infineon Technologies Ag | Elektronisches Bauteil und Verfahren zum Herstellen |
| JP2010258286A (ja) * | 2009-04-27 | 2010-11-11 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP2013089630A (ja) * | 2011-10-13 | 2013-05-13 | Hitachi Chemical Co Ltd | 半導体パッケージ及びその製造方法 |
| JP2014021065A (ja) * | 2012-07-23 | 2014-02-03 | Denso Corp | 物理量センサ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212169A (ja) * | 1982-06-04 | 1983-12-09 | Toshiba Corp | 三層電極構造を有する半導体装置 |
-
1988
- 1988-04-05 JP JP63083802A patent/JPH01255234A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212169A (ja) * | 1982-06-04 | 1983-12-09 | Toshiba Corp | 三層電極構造を有する半導体装置 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2362510B (en) * | 1999-12-20 | 2003-07-02 | Lucent Technologies Inc | Wire bonding method for copper interconnects in semiconductor devices |
| US6790757B1 (en) | 1999-12-20 | 2004-09-14 | Agere Systems Inc. | Wire bonding method for copper interconnects in semiconductor devices |
| DE102006044691A1 (de) * | 2006-09-22 | 2008-03-27 | Infineon Technologies Ag | Elektronisches Bauteil und Verfahren zum Herstellen |
| US8076238B2 (en) | 2006-09-22 | 2011-12-13 | Infineon Technologies Ag | Electronic device and method for production |
| DE102006044691B4 (de) * | 2006-09-22 | 2012-06-21 | Infineon Technologies Ag | Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements |
| US8552571B2 (en) | 2006-09-22 | 2013-10-08 | Infineon Technologies Ag | Electronic device and method for production |
| US9368447B2 (en) | 2006-09-22 | 2016-06-14 | Infineon Technologies Ag | Electronic device and method for production |
| US9754912B2 (en) | 2006-09-22 | 2017-09-05 | Infineon Technologies Ag | Electronic device and method for production |
| JP2010258286A (ja) * | 2009-04-27 | 2010-11-11 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP2013089630A (ja) * | 2011-10-13 | 2013-05-13 | Hitachi Chemical Co Ltd | 半導体パッケージ及びその製造方法 |
| JP2014021065A (ja) * | 2012-07-23 | 2014-02-03 | Denso Corp | 物理量センサ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533823B2 (enExample) | 1993-05-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |