JPH0122983B2 - - Google Patents
Info
- Publication number
- JPH0122983B2 JPH0122983B2 JP57042185A JP4218582A JPH0122983B2 JP H0122983 B2 JPH0122983 B2 JP H0122983B2 JP 57042185 A JP57042185 A JP 57042185A JP 4218582 A JP4218582 A JP 4218582A JP H0122983 B2 JPH0122983 B2 JP H0122983B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- forming
- metal
- layer
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Weting (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4218582A JPS58159353A (ja) | 1982-03-17 | 1982-03-17 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4218582A JPS58159353A (ja) | 1982-03-17 | 1982-03-17 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58159353A JPS58159353A (ja) | 1983-09-21 |
| JPH0122983B2 true JPH0122983B2 (enrdf_load_stackoverflow) | 1989-04-28 |
Family
ID=12628940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4218582A Granted JPS58159353A (ja) | 1982-03-17 | 1982-03-17 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58159353A (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5111474B2 (enrdf_load_stackoverflow) * | 1972-05-24 | 1976-04-12 |
-
1982
- 1982-03-17 JP JP4218582A patent/JPS58159353A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58159353A (ja) | 1983-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4769687A (en) | Lateral bipolar transistor and method of producing the same | |
| US4005452A (en) | Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby | |
| US4045249A (en) | Oxide film isolation process | |
| JPS60194558A (ja) | 半導体装置の製造方法 | |
| EP0030147B1 (en) | Method for manufacturing a semiconductor integrated circuit | |
| JPH08195433A (ja) | 半導体装置及びその製造方法 | |
| US3776786A (en) | Method of producing high speed transistors and resistors simultaneously | |
| JPH0122983B2 (enrdf_load_stackoverflow) | ||
| JPH1092764A (ja) | 半導体素子のポリサイド層形成方法 | |
| JPH05291186A (ja) | 半導体チップの表面上に金属コンタクトを形成する方法 | |
| JPS5984435A (ja) | 半導体集積回路及びその製造方法 | |
| JPH0770586B2 (ja) | 半導体装置の製造方法 | |
| JPS5940571A (ja) | 半導体装置 | |
| JP2859400B2 (ja) | ゲートターンオフサイリスタの製造方法 | |
| JP2745946B2 (ja) | 半導体集積回路の製造方法 | |
| JPS5919374A (ja) | 半導体装置の製造方法 | |
| JPS63114261A (ja) | トランジスタ用の自己整合型ベース分路 | |
| JPH0267732A (ja) | 半導体集積回路 | |
| JPS6343893B2 (enrdf_load_stackoverflow) | ||
| JPH05283715A (ja) | 高安定ツェナーダイオード | |
| JPS6127677A (ja) | 半導体装置の製造方法 | |
| JPS6258667B2 (enrdf_load_stackoverflow) | ||
| JPS6232619B2 (enrdf_load_stackoverflow) | ||
| GB2068168A (en) | Bipolar transistor | |
| JPS6314501B2 (enrdf_load_stackoverflow) |