JPS6314501B2 - - Google Patents
Info
- Publication number
- JPS6314501B2 JPS6314501B2 JP56048881A JP4888181A JPS6314501B2 JP S6314501 B2 JPS6314501 B2 JP S6314501B2 JP 56048881 A JP56048881 A JP 56048881A JP 4888181 A JP4888181 A JP 4888181A JP S6314501 B2 JPS6314501 B2 JP S6314501B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- conductivity type
- impurity density
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/343—Gate regions of field-effect devices having PN junction gates
Landscapes
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56048881A JPS57162463A (en) | 1981-03-31 | 1981-03-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56048881A JPS57162463A (en) | 1981-03-31 | 1981-03-31 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57162463A JPS57162463A (en) | 1982-10-06 |
JPS6314501B2 true JPS6314501B2 (enrdf_load_stackoverflow) | 1988-03-31 |
Family
ID=12815619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56048881A Granted JPS57162463A (en) | 1981-03-31 | 1981-03-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57162463A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4782028A (en) * | 1987-08-27 | 1988-11-01 | Santa Barbara Research Center | Process methodology for two-sided fabrication of devices on thinned silicon |
-
1981
- 1981-03-31 JP JP56048881A patent/JPS57162463A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57162463A (en) | 1982-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4794445A (en) | Semiconductor device | |
US4845046A (en) | Process for producing semiconductor devices by self-alignment technology | |
JPS6118147A (ja) | 半導体デバイスの形成方法 | |
JPH0355984B2 (enrdf_load_stackoverflow) | ||
JPH0719838B2 (ja) | 半導体装置およびその製造方法 | |
US4037307A (en) | Methods for making transistor structures | |
EP0095328A2 (en) | Method for manufacturing semiconductor device by controlling thickness of insulating film at peripheral portion of element formation region | |
JPH08195433A (ja) | 半導体装置及びその製造方法 | |
JP2500630B2 (ja) | 半導体装置 | |
JPS6314501B2 (enrdf_load_stackoverflow) | ||
JPH06163905A (ja) | 絶縁ゲート半導体装置の製造方法 | |
JPS5984435A (ja) | 半導体集積回路及びその製造方法 | |
JPS60250645A (ja) | 半導体装置 | |
US4546537A (en) | Method for producing a semiconductor device utilizing V-groove etching and thermal oxidation | |
JPS62229880A (ja) | 半導体装置及びその製造方法 | |
JPS5834943A (ja) | 半導体装置の製造方法 | |
JP2956635B2 (ja) | 半導体装置およびその製造方法 | |
JP2531688B2 (ja) | 半導体装置の製造方法 | |
JP2001237438A (ja) | 半導体装置及びその製造方法 | |
JPS6210027B2 (enrdf_load_stackoverflow) | ||
JP2745946B2 (ja) | 半導体集積回路の製造方法 | |
JPS62120040A (ja) | 半導体装置の製造方法 | |
CA1050666A (en) | Method for making transistor structures | |
JPS62141768A (ja) | 半導体装置およびその製造方法 | |
JPH0527995B2 (enrdf_load_stackoverflow) |