JPS6314501B2 - - Google Patents

Info

Publication number
JPS6314501B2
JPS6314501B2 JP56048881A JP4888181A JPS6314501B2 JP S6314501 B2 JPS6314501 B2 JP S6314501B2 JP 56048881 A JP56048881 A JP 56048881A JP 4888181 A JP4888181 A JP 4888181A JP S6314501 B2 JPS6314501 B2 JP S6314501B2
Authority
JP
Japan
Prior art keywords
region
gate
conductivity type
impurity density
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56048881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57162463A (en
Inventor
Junichi Nishizawa
Kenji Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP56048881A priority Critical patent/JPS57162463A/ja
Publication of JPS57162463A publication Critical patent/JPS57162463A/ja
Publication of JPS6314501B2 publication Critical patent/JPS6314501B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343Gate regions of field-effect devices having PN junction gates

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56048881A 1981-03-31 1981-03-31 Manufacture of semiconductor device Granted JPS57162463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56048881A JPS57162463A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56048881A JPS57162463A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57162463A JPS57162463A (en) 1982-10-06
JPS6314501B2 true JPS6314501B2 (enrdf_load_stackoverflow) 1988-03-31

Family

ID=12815619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56048881A Granted JPS57162463A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57162463A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon

Also Published As

Publication number Publication date
JPS57162463A (en) 1982-10-06

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