JPS57162463A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57162463A
JPS57162463A JP56048881A JP4888181A JPS57162463A JP S57162463 A JPS57162463 A JP S57162463A JP 56048881 A JP56048881 A JP 56048881A JP 4888181 A JP4888181 A JP 4888181A JP S57162463 A JPS57162463 A JP S57162463A
Authority
JP
Japan
Prior art keywords
type
layer
regions
region
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56048881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6314501B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Kenji Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP56048881A priority Critical patent/JPS57162463A/ja
Publication of JPS57162463A publication Critical patent/JPS57162463A/ja
Publication of JPS6314501B2 publication Critical patent/JPS6314501B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56048881A 1981-03-31 1981-03-31 Manufacture of semiconductor device Granted JPS57162463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56048881A JPS57162463A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56048881A JPS57162463A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57162463A true JPS57162463A (en) 1982-10-06
JPS6314501B2 JPS6314501B2 (enrdf_load_stackoverflow) 1988-03-31

Family

ID=12815619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56048881A Granted JPS57162463A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57162463A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon

Also Published As

Publication number Publication date
JPS6314501B2 (enrdf_load_stackoverflow) 1988-03-31

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