JPH0120549B2 - - Google Patents

Info

Publication number
JPH0120549B2
JPH0120549B2 JP56041525A JP4152581A JPH0120549B2 JP H0120549 B2 JPH0120549 B2 JP H0120549B2 JP 56041525 A JP56041525 A JP 56041525A JP 4152581 A JP4152581 A JP 4152581A JP H0120549 B2 JPH0120549 B2 JP H0120549B2
Authority
JP
Japan
Prior art keywords
region
electrode
field
guard
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56041525A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57155773A (en
Inventor
Tadahiko Tanaka
Norihiro Shigeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP4152581A priority Critical patent/JPS57155773A/ja
Publication of JPS57155773A publication Critical patent/JPS57155773A/ja
Publication of JPH0120549B2 publication Critical patent/JPH0120549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP4152581A 1981-03-20 1981-03-20 High pressure-resistant planar transistor Granted JPS57155773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4152581A JPS57155773A (en) 1981-03-20 1981-03-20 High pressure-resistant planar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4152581A JPS57155773A (en) 1981-03-20 1981-03-20 High pressure-resistant planar transistor

Publications (2)

Publication Number Publication Date
JPS57155773A JPS57155773A (en) 1982-09-25
JPH0120549B2 true JPH0120549B2 (de) 1989-04-17

Family

ID=12610803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4152581A Granted JPS57155773A (en) 1981-03-20 1981-03-20 High pressure-resistant planar transistor

Country Status (1)

Country Link
JP (1) JPS57155773A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114434A (ja) * 1981-12-28 1983-07-07 Fujitsu Ltd 高耐圧半導体装置
JPS60153164A (ja) * 1984-01-20 1985-08-12 Nec Corp 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968669A (de) * 1972-11-06 1974-07-03
JPS5269275A (en) * 1975-12-08 1977-06-08 Hitachi Ltd Transistor
JPS5318382A (en) * 1976-08-02 1978-02-20 Rca Corp Method of manufacturing crt screen structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968669A (de) * 1972-11-06 1974-07-03
JPS5269275A (en) * 1975-12-08 1977-06-08 Hitachi Ltd Transistor
JPS5318382A (en) * 1976-08-02 1978-02-20 Rca Corp Method of manufacturing crt screen structure

Also Published As

Publication number Publication date
JPS57155773A (en) 1982-09-25

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