JPH01179348A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH01179348A
JPH01179348A JP63000919A JP91988A JPH01179348A JP H01179348 A JPH01179348 A JP H01179348A JP 63000919 A JP63000919 A JP 63000919A JP 91988 A JP91988 A JP 91988A JP H01179348 A JPH01179348 A JP H01179348A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor element
resin
semiconductor
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63000919A
Other languages
English (en)
Inventor
Naoki Miyamoto
直樹 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63000919A priority Critical patent/JPH01179348A/ja
Publication of JPH01179348A publication Critical patent/JPH01179348A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48998Alignment aids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型の半導体装置に関し、特に半導体装
置を構成している半導体装置用リードフレームの半導体
素子搭載部の構造に関する。
〔従来の技術〕
従来、この種の半導体装置は半導体素子搭載部が平坦な
半導体装置用リードフレームで構成されていた。
〔発明が解決しようとする問題点〕
上述した従来の半導体装置は樹脂封止時に半導体素子と
樹脂そのものの熱収縮の差によって熱応力が発生し、す
なわちこれが内部応力として残留する。この残留応力に
よって半導体素子は抵抗値が変動(ピエゾ抵抗効果)し
、大幅な電気的特性劣化になる。この対策として曲げ弾
性率の低い樹脂により封止することが行われているが効
果が少ないばかりかむしろ耐湿性信頼度を低下させる。
さらに近年の半導体素子の高集積化に伴い、半導体装置
の製造工程において、外部接続用金属細線(ポンディン
グワイヤ)が特に長い場合など、ワイヤのだれが発生し
、それが半導体素子の周辺端部に接触することにより短
絡する危険を有している。
〔問題点を解決するための手段〕
本発明の半導体装置は、それを構成する半導体装置用リ
ードフレームの半導体素子搭載部の周囲に絶縁性樹脂の
突起枠を有している。
〔実施例〕
次に、本発明について図面を参照して説明する。
第1図は本発明の一実施例の平面図である。
半導体装置8を構成する0、2工厚の42合金製薄平板
より形成された半導体装置用リードフレーム10半導体
素子搭載部2の周囲部3に絶縁性樹脂(ポリイミド樹脂
)を熱圧着により形成させて、突起枠4とすることによ
り半導体装置封止用、樹脂5の熱収縮応力は突起枠4に
その大部分が吸収され、半導体素子6には直接加わらな
い。
従って、電流増幅率等の電気的特性の劣化は従来仕様の
ものと比べて半減する。
さらに、半導体素子の外部接続用ワイヤ7のisQが生
じた場合、突起枠4が堤となりワイヤ7と半導体素子6
との接触を回避できる。本発明はリードフレームの素材
として42合金を示したが他の金属で行っても効果があ
ることはいうまでもない。
〔発明の効果〕
以上説明したように本発明は、半導体装置を構成してい
る半導体装置用リードフレームの半導体素子搭載部の周
囲に絶縁性樹脂により突起枠を設けることにより、封止
用樹脂の半導体素子に与え′る熱応力を緩和することが
でき、電気的特性劣化を低減することができる。
さらに、外部接続用ワイヤにだれが生じた場合、その突
起部が堤となり、半導体素子との接触を防ぐことにより
短絡を防止することができる。
以上Yこより半導体装置の生産における歩留の向上を確
実なものとすることができる。
【図面の簡単な説明】
第1図は本発明の半導体装置の縦断面図、第2図は第1
図の半導体素子搭載部近傍の斜視図である。 1・・・・・・リードフレーム、2・・・・・・半導体
素子搭載部、3・・・・・・半導体素子搭載部の周囲部
(突起枠の形成される部分)、4・・・・・・絶縁性樹
脂による突起枠、5・・・・・・封止用樹脂、6・・・
・・・半導体素子、7・・・・・・外部接続用金属細線
(ワイヤ)、8・・・・・・半導体素子搭載部支持リー
ド。 代理人 弁理士  内 原   音

Claims (1)

    【特許請求の範囲】
  1.  樹脂封止型半導体装置の半導体装置用リードフレーム
    の半導体素子搭載部の周囲に絶縁性樹脂の突起枠を有す
    ることを特徴とする半導体装置。
JP63000919A 1988-01-05 1988-01-05 半導体装置 Pending JPH01179348A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63000919A JPH01179348A (ja) 1988-01-05 1988-01-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63000919A JPH01179348A (ja) 1988-01-05 1988-01-05 半導体装置

Publications (1)

Publication Number Publication Date
JPH01179348A true JPH01179348A (ja) 1989-07-17

Family

ID=11487091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63000919A Pending JPH01179348A (ja) 1988-01-05 1988-01-05 半導体装置

Country Status (1)

Country Link
JP (1) JPH01179348A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005045930A1 (en) * 2003-11-04 2005-05-19 Infineon Technologies Ag Leadframe with insulating ring
FR2975827A1 (fr) * 2011-05-27 2012-11-30 St Microelectronics Rousset Procede de fabrication d'un composant electronique et composant correspondant

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005045930A1 (en) * 2003-11-04 2005-05-19 Infineon Technologies Ag Leadframe with insulating ring
FR2975827A1 (fr) * 2011-05-27 2012-11-30 St Microelectronics Rousset Procede de fabrication d'un composant electronique et composant correspondant

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