JPH01146554U - - Google Patents
Info
- Publication number
- JPH01146554U JPH01146554U JP4307188U JP4307188U JPH01146554U JP H01146554 U JPH01146554 U JP H01146554U JP 4307188 U JP4307188 U JP 4307188U JP 4307188 U JP4307188 U JP 4307188U JP H01146554 U JPH01146554 U JP H01146554U
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- semiconductor substrate
- impurity
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000000295 complement effect Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Description
第1図は本考案の一実施例による半導体装置を
示す概略構成図、第2図aは従来の半導体装置を
示す概略構成図、第2図bはその寄生トランジス
タの等価回路図である。
1:半導体基板、2:フイールド酸化膜、3,
18:P−ウエル領域、4,5:ソース領域およ
びドレイン領域としてのN+不純物領域、6:ウ
エルコンタクト領域としてのP+不純物領域、7
,13:ゲート酸化膜、8,14:ゲート電極、
9:NチヤンネルMOSFET、10,11:ソ
ース領域およびドレイン領域としてのP+不純物
領域、12,20,24:基板コンタクト領域と
してのN+不純物領域、15:PチヤンネルMO
SFET、16:層間絶縁層、17,25:アル
ミニウムA1配線層、19:コンデンサ電極用の
N+不純物領域、21:絶縁層、22:コンデン
サ電極、23:コンデンサ。
FIG. 1 is a schematic configuration diagram showing a semiconductor device according to an embodiment of the present invention, FIG. 2a is a schematic configuration diagram showing a conventional semiconductor device, and FIG. 2b is an equivalent circuit diagram of a parasitic transistor thereof. 1: semiconductor substrate, 2: field oxide film, 3,
18: P − well region, 4, 5: N + impurity region as source and drain region, 6: P + impurity region as well contact region, 7
, 13: gate oxide film, 8, 14: gate electrode,
9: N-channel MOSFET, 10, 11: P + impurity regions as source and drain regions, 12, 20, 24: N + impurity regions as substrate contact regions, 15: P-channel MO
SFET, 16: interlayer insulating layer, 17, 25: aluminum A1 wiring layer, 19: N + impurity region for capacitor electrode, 21: insulating layer, 22: capacitor electrode, 23: capacitor.
Claims (1)
ウエル領域と、 このウエル領域に形成された第1の素子と、 前記半導体基板に形成され、前記第1の素子と
相補関係の第2の素子と、 前記半導体基板表面に形成された基板コンタク
ト領域としての第1導電形の不純物領域とを具備
し、 この基板コンタクト領域としての第1の導電形
の不純物領域が、前記第1の素子のソース領域お
よびドレイン領域としての第1の導電形の不純物
領域より高い不純物濃度を有することを特徴とす
る半導体装置。[Claims for Utility Model Registration] A semiconductor substrate of a first conductivity type, a well region of a second conductivity type formed on the surface of this semiconductor substrate, a first element formed in this well region, and the semiconductor substrate. a second element formed in a complementary relationship to the first element; and an impurity region of a first conductivity type formed on the surface of the semiconductor substrate as a substrate contact region, and as the substrate contact region. A semiconductor device characterized in that a first conductivity type impurity region has a higher impurity concentration than the first conductivity type impurity regions serving as a source region and a drain region of the first element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4307188U JPH01146554U (en) | 1988-03-30 | 1988-03-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4307188U JPH01146554U (en) | 1988-03-30 | 1988-03-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01146554U true JPH01146554U (en) | 1989-10-09 |
Family
ID=31269472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4307188U Pending JPH01146554U (en) | 1988-03-30 | 1988-03-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01146554U (en) |
-
1988
- 1988-03-30 JP JP4307188U patent/JPH01146554U/ja active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH03157974A (en) | Vertical type field effect transistor | |
JPH01146554U (en) | ||
JPH03120054U (en) | ||
JPH0241456U (en) | ||
JPH0377463U (en) | ||
JPH0377464U (en) | ||
JPS6237943U (en) | ||
JPH0158960U (en) | ||
JPS62196358U (en) | ||
JPS59119045U (en) | High power high frequency transistor | |
JPH0238741U (en) | ||
JPH01169049U (en) | ||
JPH0221732U (en) | ||
JPS6197860U (en) | ||
JPH01123365U (en) | ||
JPS6312861U (en) | ||
JPH0227751U (en) | ||
JPS6397252U (en) | ||
JPH01104049U (en) | ||
JPH0197567U (en) | ||
JPH0345661U (en) | ||
JPH0396052U (en) | ||
JPH0275751U (en) | ||
JPS6384964U (en) | ||
JPS61188367U (en) |