JPH0113217B2 - - Google Patents
Info
- Publication number
- JPH0113217B2 JPH0113217B2 JP57199214A JP19921482A JPH0113217B2 JP H0113217 B2 JPH0113217 B2 JP H0113217B2 JP 57199214 A JP57199214 A JP 57199214A JP 19921482 A JP19921482 A JP 19921482A JP H0113217 B2 JPH0113217 B2 JP H0113217B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- acetate
- organic solvent
- pattern
- based organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/00—
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57199214A JPS5988829A (ja) | 1982-11-12 | 1982-11-12 | フオトレジストの除去方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57199214A JPS5988829A (ja) | 1982-11-12 | 1982-11-12 | フオトレジストの除去方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5988829A JPS5988829A (ja) | 1984-05-22 |
| JPH0113217B2 true JPH0113217B2 (enExample) | 1989-03-03 |
Family
ID=16404026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57199214A Granted JPS5988829A (ja) | 1982-11-12 | 1982-11-12 | フオトレジストの除去方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988829A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030046868A (ko) * | 2001-12-07 | 2003-06-18 | 주식회사 덕성 | 유기막 제거용 시너 |
| CN121348678A (zh) * | 2025-12-22 | 2026-01-16 | 合肥晶合集成电路股份有限公司 | 光阻的去除方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS592043A (ja) * | 1982-06-29 | 1984-01-07 | Fujitsu Ltd | フオトレジストの現像方法 |
-
1982
- 1982-11-12 JP JP57199214A patent/JPS5988829A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5988829A (ja) | 1984-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100883233B1 (ko) | 이온 주입 이후에 포토레지스트 제거 공정 | |
| JPH07146563A (ja) | ホトレジスト剥離方法 | |
| JPH0113217B2 (enExample) | ||
| US3986876A (en) | Method for making a mask having a sloped relief | |
| JPS5633827A (en) | Photo etching method including surface treatment of substrate | |
| JPS5936257B2 (ja) | レジスト材料の剥離方法 | |
| JPS6049630A (ja) | 半導体装置の製造方法 | |
| JPS6137774B2 (enExample) | ||
| JPH06151302A (ja) | レジスト除去方法 | |
| JPS58132927A (ja) | パタ−ン形成方法 | |
| JPS5990850A (ja) | レジストパタ−ンの剥離液 | |
| DE2625870A1 (de) | Fotolithografisches aetzverfahren | |
| US3951659A (en) | Method for resist coating of a glass substrate | |
| JPS58220429A (ja) | 半導体装置の製造方法 | |
| JPS5857731B2 (ja) | プラズマエッチング用レジスト組成物 | |
| JP2613755B2 (ja) | 基板の処理方法 | |
| KR860001039B1 (ko) | 반도체 장치에 있어서 사진 감광물질 마스크 처리 방법 | |
| JPH04103124A (ja) | 半導体基板の汚染除去方法 | |
| JPH0927473A (ja) | レジスト除去方法およびその装置 | |
| JPS629630A (ja) | レジストの除去方法 | |
| JPS6054775B2 (ja) | ドライ現像方法 | |
| JPS56169325A (en) | Manufacture of semiconductor device | |
| JPH0271520A (ja) | レジストの除去方法 | |
| JPS63215040A (ja) | レジストのハ−ドニング方法 | |
| JPS6161532B2 (enExample) |