JPH0113216B2 - - Google Patents

Info

Publication number
JPH0113216B2
JPH0113216B2 JP55070555A JP7055580A JPH0113216B2 JP H0113216 B2 JPH0113216 B2 JP H0113216B2 JP 55070555 A JP55070555 A JP 55070555A JP 7055580 A JP7055580 A JP 7055580A JP H0113216 B2 JPH0113216 B2 JP H0113216B2
Authority
JP
Japan
Prior art keywords
electrode
base
emitter
insulating film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55070555A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5723220A (en
Inventor
Tadahiko Tanaka
Takeshi Oomukae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP7055580A priority Critical patent/JPS5723220A/ja
Publication of JPS5723220A publication Critical patent/JPS5723220A/ja
Publication of JPH0113216B2 publication Critical patent/JPH0113216B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP7055580A 1980-05-26 1980-05-26 Formation of multilayer electrode for semiconductor device Granted JPS5723220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7055580A JPS5723220A (en) 1980-05-26 1980-05-26 Formation of multilayer electrode for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7055580A JPS5723220A (en) 1980-05-26 1980-05-26 Formation of multilayer electrode for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5723220A JPS5723220A (en) 1982-02-06
JPH0113216B2 true JPH0113216B2 (cg-RX-API-DMAC10.html) 1989-03-03

Family

ID=13434881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7055580A Granted JPS5723220A (en) 1980-05-26 1980-05-26 Formation of multilayer electrode for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5723220A (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04145210A (ja) * 1990-12-15 1992-05-19 Aoyama Seisakusho:Kk ワッシャ組込みボルトの製造法

Also Published As

Publication number Publication date
JPS5723220A (en) 1982-02-06

Similar Documents

Publication Publication Date Title
JPH05335529A (ja) 半導体装置およびその製造方法
JPH0756865B2 (ja) 半導体素子の食刻バリヤー層を用いたコンタクトホール形成方法
JP2561602B2 (ja) 多層金属配線構造のコンタクトの製造方法
JPH0113216B2 (cg-RX-API-DMAC10.html)
JPH06244239A (ja) 半導体装置
JP3259363B2 (ja) 半導体装置のボンディングパッド構造の形成方法
JPS6239823B2 (cg-RX-API-DMAC10.html)
JPH0117248B2 (cg-RX-API-DMAC10.html)
JPH05343408A (ja) Ｔａｂ用半導体チップ
JPH027435A (ja) 金属パンプ電極を有する半導体装置
JPH05226475A (ja) 半導体装置の製造方法
JPH0680733B2 (ja) 半導体装置の配線接続部
KR0172785B1 (ko) 반도체 접속장치 및 그 제조방법
JPS581542B2 (ja) 半導体集積回路の製造方法
JPS6130418B2 (cg-RX-API-DMAC10.html)
KR960011250B1 (ko) 반도체 접속장치 제조방법
JPS623981B2 (cg-RX-API-DMAC10.html)
JPS6140133B2 (cg-RX-API-DMAC10.html)
JP2900477B2 (ja) 半導体装置の製造方法
JPH0122989B2 (cg-RX-API-DMAC10.html)
JPH09283617A (ja) 半導体装置およびその製造方法
JPH08181123A (ja) 半導体装置の製造方法
JPS61239647A (ja) 半導体装置
JPS6239027A (ja) 半導体装置の製造方法
JPH03116852A (ja) 半導体装置