JPH01130572A - 化合物半導体装置の製造方法 - Google Patents

化合物半導体装置の製造方法

Info

Publication number
JPH01130572A
JPH01130572A JP28858487A JP28858487A JPH01130572A JP H01130572 A JPH01130572 A JP H01130572A JP 28858487 A JP28858487 A JP 28858487A JP 28858487 A JP28858487 A JP 28858487A JP H01130572 A JPH01130572 A JP H01130572A
Authority
JP
Japan
Prior art keywords
layer
gaas
algaas
low resistance
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28858487A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543292B2 (enExample
Inventor
Masaru Miyazaki
勝 宮崎
Yoshinori Imamura
今村　慶憲
Hiroshi Yanagisawa
柳沢　寛
Yuichi Ono
小野　佑一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP28858487A priority Critical patent/JPH01130572A/ja
Publication of JPH01130572A publication Critical patent/JPH01130572A/ja
Publication of JPH0543292B2 publication Critical patent/JPH0543292B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP28858487A 1987-11-17 1987-11-17 化合物半導体装置の製造方法 Granted JPH01130572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28858487A JPH01130572A (ja) 1987-11-17 1987-11-17 化合物半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28858487A JPH01130572A (ja) 1987-11-17 1987-11-17 化合物半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH01130572A true JPH01130572A (ja) 1989-05-23
JPH0543292B2 JPH0543292B2 (enExample) 1993-07-01

Family

ID=17732161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28858487A Granted JPH01130572A (ja) 1987-11-17 1987-11-17 化合物半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH01130572A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8964162B2 (en) 2009-03-27 2015-02-24 Carl Zeiss Smt Gmbh Optical assembly

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180186A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Semiconductor device and manufacturing method therefor
JPS57193069A (en) * 1981-05-22 1982-11-27 Fujitsu Ltd Semiconductor device
JPS5961919A (ja) * 1982-10-01 1984-04-09 Hitachi Ltd 薄膜の製造方法
JPS62169483A (ja) * 1986-01-22 1987-07-25 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタの構造及び製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180186A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Semiconductor device and manufacturing method therefor
JPS57193069A (en) * 1981-05-22 1982-11-27 Fujitsu Ltd Semiconductor device
JPS5961919A (ja) * 1982-10-01 1984-04-09 Hitachi Ltd 薄膜の製造方法
JPS62169483A (ja) * 1986-01-22 1987-07-25 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタの構造及び製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8964162B2 (en) 2009-03-27 2015-02-24 Carl Zeiss Smt Gmbh Optical assembly

Also Published As

Publication number Publication date
JPH0543292B2 (enExample) 1993-07-01

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