JP7843949B2 - 半導体装置、電力変換装置、及び、半導体装置の製造方法 - Google Patents

半導体装置、電力変換装置、及び、半導体装置の製造方法

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Publication number
JP7843949B2
JP7843949B2 JP2025568898A JP2025568898A JP7843949B2 JP 7843949 B2 JP7843949 B2 JP 7843949B2 JP 2025568898 A JP2025568898 A JP 2025568898A JP 2025568898 A JP2025568898 A JP 2025568898A JP 7843949 B2 JP7843949 B2 JP 7843949B2
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JP
Japan
Prior art keywords
trench
semiconductor device
insulating film
electrode
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2025568898A
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English (en)
Japanese (ja)
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JPWO2025225054A5 (https=
JPWO2025225054A1 (https=
Inventor
貴亮 富永
彬文 飯島
亘平 足立
裕 福井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2025225054A1 publication Critical patent/JPWO2025225054A1/ja
Publication of JPWO2025225054A5 publication Critical patent/JPWO2025225054A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2025568898A 2024-04-23 2024-10-23 半導体装置、電力変換装置、及び、半導体装置の製造方法 Active JP7843949B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2024/015801 2024-04-23
PCT/JP2024/015801 WO2025224813A1 (ja) 2024-04-23 2024-04-23 半導体装置及び半導体装置の製造方法
PCT/JP2024/037769 WO2025225054A1 (ja) 2024-04-23 2024-10-23 半導体装置、電力変換装置、及び、半導体装置の製造方法

Publications (3)

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JPWO2025225054A1 JPWO2025225054A1 (https=) 2025-10-30
JPWO2025225054A5 JPWO2025225054A5 (https=) 2026-04-01
JP7843949B2 true JP7843949B2 (ja) 2026-04-10

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ID=97489632

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JP2025568898A Active JP7843949B2 (ja) 2024-04-23 2024-10-23 半導体装置、電力変換装置、及び、半導体装置の製造方法

Country Status (2)

Country Link
JP (1) JP7843949B2 (https=)
WO (2) WO2025224813A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100494A (ja) 2004-09-29 2006-04-13 Nec Electronics Corp 縦型ｍｏｓｆｅｔ
JP2019161200A (ja) 2017-05-17 2019-09-19 ローム株式会社 半導体装置
WO2022024810A1 (ja) 2020-07-31 2022-02-03 ローム株式会社 ＳｉＣ半導体装置
WO2022163082A1 (ja) 2021-02-01 2022-08-04 ローム株式会社 ＳｉＣ半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008085278A (ja) * 2006-09-29 2008-04-10 Ricoh Co Ltd 半導体装置及びその製造方法
JP5812029B2 (ja) * 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US9825166B2 (en) * 2013-01-23 2017-11-21 Hitachi, Ltd. Silicon carbide semiconductor device and method for producing same
US9178015B2 (en) * 2014-01-10 2015-11-03 Vishay General Semiconductor Llc Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
JP6185504B2 (ja) * 2015-03-24 2017-08-23 京セラ株式会社 半導体装置
JP6409681B2 (ja) * 2015-05-29 2018-10-24 株式会社デンソー 半導体装置およびその製造方法
CN107683530B (zh) * 2015-06-09 2020-08-18 三菱电机株式会社 电力用半导体装置
JP7382558B2 (ja) * 2019-12-25 2023-11-17 株式会社ノベルクリスタルテクノロジー トレンチ型ｍｏｓｆｅｔ
WO2021261102A1 (ja) * 2020-06-26 2021-12-30 ローム株式会社 電子部品
JP7471199B2 (ja) * 2020-11-12 2024-04-19 三菱電機株式会社 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法
JP7647239B2 (ja) * 2021-03-30 2025-03-18 富士電機株式会社 半導体装置
JP7586034B2 (ja) * 2021-09-03 2024-11-19 株式会社デンソー 半導体装置
WO2023080091A1 (ja) * 2021-11-05 2023-05-11 ローム株式会社 半導体装置の製造方法
JP7757235B2 (ja) * 2022-05-13 2025-10-21 株式会社デンソー 半導体装置とその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100494A (ja) 2004-09-29 2006-04-13 Nec Electronics Corp 縦型ｍｏｓｆｅｔ
JP2019161200A (ja) 2017-05-17 2019-09-19 ローム株式会社 半導体装置
WO2022024810A1 (ja) 2020-07-31 2022-02-03 ローム株式会社 ＳｉＣ半導体装置
WO2022163082A1 (ja) 2021-02-01 2022-08-04 ローム株式会社 ＳｉＣ半導体装置

Also Published As

Publication number Publication date
WO2025224813A1 (ja) 2025-10-30
JPWO2025225054A1 (https=) 2025-10-30
WO2025225054A1 (ja) 2025-10-30

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