JPWO2025225054A1 - - Google Patents
Info
- Publication number
- JPWO2025225054A1 JPWO2025225054A1 JP2025568898A JP2025568898A JPWO2025225054A1 JP WO2025225054 A1 JPWO2025225054 A1 JP WO2025225054A1 JP 2025568898 A JP2025568898 A JP 2025568898A JP 2025568898 A JP2025568898 A JP 2025568898A JP WO2025225054 A1 JPWO2025225054 A1 JP WO2025225054A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPPCT/JP2024/015801 | 2024-04-23 | ||
| PCT/JP2024/015801 WO2025224813A1 (ja) | 2024-04-23 | 2024-04-23 | 半導体装置及び半導体装置の製造方法 |
| PCT/JP2024/037769 WO2025225054A1 (ja) | 2024-04-23 | 2024-10-23 | 半導体装置、電力変換装置、及び、半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2025225054A1 true JPWO2025225054A1 (https=) | 2025-10-30 |
| JPWO2025225054A5 JPWO2025225054A5 (https=) | 2026-04-01 |
| JP7843949B2 JP7843949B2 (ja) | 2026-04-10 |
Family
ID=97489632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025568898A Active JP7843949B2 (ja) | 2024-04-23 | 2024-10-23 | 半導体装置、電力変換装置、及び、半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7843949B2 (https=) |
| WO (2) | WO2025224813A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006100494A (ja) * | 2004-09-29 | 2006-04-13 | Nec Electronics Corp | 縦型ｍｏｓｆｅｔ |
| JP2019161200A (ja) * | 2017-05-17 | 2019-09-19 | ローム株式会社 | 半導体装置 |
| WO2022024810A1 (ja) * | 2020-07-31 | 2022-02-03 | ローム株式会社 | ＳｉＣ半導体装置 |
| WO2022163082A1 (ja) * | 2021-02-01 | 2022-08-04 | ローム株式会社 | ＳｉＣ半導体装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008085278A (ja) * | 2006-09-29 | 2008-04-10 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
| JP5812029B2 (ja) * | 2012-06-13 | 2015-11-11 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| US9825166B2 (en) * | 2013-01-23 | 2017-11-21 | Hitachi, Ltd. | Silicon carbide semiconductor device and method for producing same |
| US9178015B2 (en) * | 2014-01-10 | 2015-11-03 | Vishay General Semiconductor Llc | Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications |
| JP6185504B2 (ja) * | 2015-03-24 | 2017-08-23 | 京セラ株式会社 | 半導体装置 |
| JP6409681B2 (ja) * | 2015-05-29 | 2018-10-24 | 株式会社デンソー | 半導体装置およびその製造方法 |
| CN107683530B (zh) * | 2015-06-09 | 2020-08-18 | 三菱电机株式会社 | 电力用半导体装置 |
| JP7382558B2 (ja) * | 2019-12-25 | 2023-11-17 | 株式会社ノベルクリスタルテクノロジー | トレンチ型ｍｏｓｆｅｔ |
| WO2021261102A1 (ja) * | 2020-06-26 | 2021-12-30 | ローム株式会社 | 電子部品 |
| JP7471199B2 (ja) * | 2020-11-12 | 2024-04-19 | 三菱電機株式会社 | 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法 |
| JP7647239B2 (ja) * | 2021-03-30 | 2025-03-18 | 富士電機株式会社 | 半導体装置 |
| JP7586034B2 (ja) * | 2021-09-03 | 2024-11-19 | 株式会社デンソー | 半導体装置 |
| WO2023080091A1 (ja) * | 2021-11-05 | 2023-05-11 | ローム株式会社 | 半導体装置の製造方法 |
| JP7757235B2 (ja) * | 2022-05-13 | 2025-10-21 | 株式会社デンソー | 半導体装置とその製造方法 |
-
2024
- 2024-04-23 WO PCT/JP2024/015801 patent/WO2025224813A1/ja active Pending
- 2024-10-23 WO PCT/JP2024/037769 patent/WO2025225054A1/ja active Pending
- 2024-10-23 JP JP2025568898A patent/JP7843949B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006100494A (ja) * | 2004-09-29 | 2006-04-13 | Nec Electronics Corp | 縦型ｍｏｓｆｅｔ |
| JP2019161200A (ja) * | 2017-05-17 | 2019-09-19 | ローム株式会社 | 半導体装置 |
| WO2022024810A1 (ja) * | 2020-07-31 | 2022-02-03 | ローム株式会社 | ＳｉＣ半導体装置 |
| WO2022163082A1 (ja) * | 2021-02-01 | 2022-08-04 | ローム株式会社 | ＳｉＣ半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025224813A1 (ja) | 2025-10-30 |
| JP7843949B2 (ja) | 2026-04-10 |
| WO2025225054A1 (ja) | 2025-10-30 |
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