JP7814674B2 - 化合物、重合体、組成物、膜形成用組成物、パターンの形成方法、絶縁膜の形成方法及び化合物の製造方法 - Google Patents

化合物、重合体、組成物、膜形成用組成物、パターンの形成方法、絶縁膜の形成方法及び化合物の製造方法

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JP7814674B2
JP7814674B2 JP2022571521A JP2022571521A JP7814674B2 JP 7814674 B2 JP7814674 B2 JP 7814674B2 JP 2022571521 A JP2022571521 A JP 2022571521A JP 2022571521 A JP2022571521 A JP 2022571521A JP 7814674 B2 JP7814674 B2 JP 7814674B2
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carbon atoms
compound
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禎 大松
悠 岡田
威 小熊
正裕 松本
結士 新美
雅敏 越後
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Mitsubishi Gas Chemical Co Inc
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    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/11Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
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JP2022571521A 2020-12-21 2021-12-21 化合物、重合体、組成物、膜形成用組成物、パターンの形成方法、絶縁膜の形成方法及び化合物の製造方法 Active JP7814674B2 (ja)

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US20230103685A1 (en) * 2021-09-30 2023-04-06 Rohm And Haas Electronic Materials Llc Iodine-containing acid cleavable compounds, polymers derived therefrom, and photoresist compositions
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WO2024135708A1 (ja) * 2022-12-20 2024-06-27 三菱瓦斯化学株式会社 化合物の製造方法、重合体、組成物、パターン形成方法
WO2025079648A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 化合物、組成物、樹脂組成物、膜形成用組成物、リソグラフィー用膜形成用組成物、レジスト膜形成用組成物
JP2025182527A (ja) * 2024-06-03 2025-12-15 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物

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JP2000122291A (ja) 1998-10-09 2000-04-28 Mitsubishi Electric Corp 化学増幅レジスト用材料、感光性樹脂組成物および該組成物を半導体装置の製造に使用する方法
JP2019061217A (ja) 2017-09-25 2019-04-18 信越化学工業株式会社 レジスト材料及びパターン形成方法
WO2020137935A1 (ja) 2018-12-27 2020-07-02 三菱瓦斯化学株式会社 化合物、(共)重合体、組成物、パターン形成方法、及び化合物の製造方法

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