TW202241836A - 化合物、聚合物、組成物、膜形成用組成物、圖型之形成方法、絕緣膜之形成方法及化合物之製造方法 - Google Patents

化合物、聚合物、組成物、膜形成用組成物、圖型之形成方法、絕緣膜之形成方法及化合物之製造方法 Download PDF

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TW202241836A
TW202241836A TW110148030A TW110148030A TW202241836A TW 202241836 A TW202241836 A TW 202241836A TW 110148030 A TW110148030 A TW 110148030A TW 110148030 A TW110148030 A TW 110148030A TW 202241836 A TW202241836 A TW 202241836A
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Taiwan
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group
formula
hydrogen atom
iodine
hydroxyl
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TW110148030A
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Chinese (zh)
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大松禎
岡田悠
小熊威
松本正裕
新美結士
越後雅敏
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日商三菱瓦斯化學股份有限公司
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    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
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    • C07C59/64—Unsaturated compounds containing ether groups, groups, groups, or groups containing six-membered aromatic rings
    • C07C59/66—Unsaturated compounds containing ether groups, groups, groups, or groups containing six-membered aromatic rings the non-carboxylic part of the ether containing six-membered aromatic rings
    • C07C59/68—Unsaturated compounds containing ether groups, groups, groups, or groups containing six-membered aromatic rings the non-carboxylic part of the ether containing six-membered aromatic rings the oxygen atom of the ether group being bound to a non-condensed six-membered aromatic ring
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    • C07C69/67—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
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    • C07C69/734—Ethers
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TW110148030A 2020-12-21 2021-12-21 化合物、聚合物、組成物、膜形成用組成物、圖型之形成方法、絕緣膜之形成方法及化合物之製造方法 TW202241836A (zh)

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US20230103685A1 (en) * 2021-09-30 2023-04-06 Rohm And Haas Electronic Materials Llc Iodine-containing acid cleavable compounds, polymers derived therefrom, and photoresist compositions
CN119451998A (zh) * 2022-06-28 2025-02-14 三菱瓦斯化学株式会社 组合物、树脂组合物、膜形成用组合物、图案形成方法及化合物
WO2024135708A1 (ja) * 2022-12-20 2024-06-27 三菱瓦斯化学株式会社 化合物の製造方法、重合体、組成物、パターン形成方法
WO2025079648A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 化合物、組成物、樹脂組成物、膜形成用組成物、リソグラフィー用膜形成用組成物、レジスト膜形成用組成物
JP2025182527A (ja) * 2024-06-03 2025-12-15 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物、及び高分子化合物

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JP2000122291A (ja) * 1998-10-09 2000-04-28 Mitsubishi Electric Corp 化学増幅レジスト用材料、感光性樹脂組成物および該組成物を半導体装置の製造に使用する方法
JP6196897B2 (ja) 2013-12-05 2017-09-13 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
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