JP7746160B2 - 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 - Google Patents

多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

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Publication number
JP7746160B2
JP7746160B2 JP2021548918A JP2021548918A JP7746160B2 JP 7746160 B2 JP7746160 B2 JP 7746160B2 JP 2021548918 A JP2021548918 A JP 2021548918A JP 2021548918 A JP2021548918 A JP 2021548918A JP 7746160 B2 JP7746160 B2 JP 7746160B2
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JP
Japan
Prior art keywords
film
multilayer reflective
reflective film
multilayer
substrate
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JP2021548918A
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English (en)
Japanese (ja)
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JPWO2021060253A1 (enExample
Inventor
真徳 中川
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Hoya Corp
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Hoya Corp
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Priority to JP2024041943A priority Critical patent/JP2024075660A/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2021548918A 2019-09-26 2020-09-23 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 Active JP7746160B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024041943A JP2024075660A (ja) 2019-09-26 2024-03-18 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019175851 2019-09-26
JP2019175851 2019-09-26
PCT/JP2020/035728 WO2021060253A1 (ja) 2019-09-26 2020-09-23 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024041943A Division JP2024075660A (ja) 2019-09-26 2024-03-18 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021060253A1 JPWO2021060253A1 (enExample) 2021-04-01
JP7746160B2 true JP7746160B2 (ja) 2025-09-30

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ID=75166148

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JP2021548918A Active JP7746160B2 (ja) 2019-09-26 2020-09-23 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2024041943A Pending JP2024075660A (ja) 2019-09-26 2024-03-18 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Family Applications After (1)

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JP2024041943A Pending JP2024075660A (ja) 2019-09-26 2024-03-18 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Country Status (6)

Country Link
US (2) US12346017B2 (enExample)
JP (2) JP7746160B2 (enExample)
KR (1) KR20220065763A (enExample)
CN (1) CN114424119A (enExample)
TW (2) TW202522117A (enExample)
WO (1) WO2021060253A1 (enExample)

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TWI811037B (zh) 2016-07-27 2023-08-01 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
TW202141165A (zh) 2020-03-27 2021-11-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TW202202641A (zh) 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料
US20220350233A1 (en) * 2021-05-03 2022-11-03 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
TW202532955A (zh) * 2023-12-27 2025-08-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Citations (5)

* Cited by examiner, † Cited by third party
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JP2004333711A (ja) 2003-05-02 2004-11-25 Hoya Corp 反射型マスクブランクスの製造方法及び反射型マスクの製造方法並びに反射多層膜付き基板の製造方法。
JP2008101916A (ja) 2006-10-17 2008-05-01 Canon Inc 多層膜光学素子
JP2010280931A (ja) 2009-06-03 2010-12-16 Canon Inc 多層膜成膜方法
JP2013122952A (ja) 2011-12-09 2013-06-20 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板の製造方法
JP2016514279A (ja) 2013-02-15 2016-05-19 エーエスエムエル ネザーランズ ビー．ブイ． 放射源コレクタ及び製造方法

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US5433988A (en) 1986-10-01 1995-07-18 Canon Kabushiki Kaisha Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray
JPH0797159B2 (ja) 1986-10-01 1995-10-18 キヤノン株式会社 軟ｘ線・真空紫外線用多層膜反射鏡
US5310603A (en) 1986-10-01 1994-05-10 Canon Kabushiki Kaisha Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray
JPH0816720B2 (ja) 1992-04-21 1996-02-21 日本航空電子工業株式会社 軟ｘ線多層膜反射鏡
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
JP4553239B2 (ja) * 2004-06-29 2010-09-29 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
KR101485754B1 (ko) * 2008-09-26 2015-01-26 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용하여 제조되는 포토마스크
WO2010113787A1 (ja) * 2009-03-31 2010-10-07 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
JP5662123B2 (ja) * 2010-02-02 2015-01-28 株式会社日立ハイテクサイエンス Ｅｕｖマスク修正装置および方法
JP2012212787A (ja) * 2011-03-31 2012-11-01 Dainippon Printing Co Ltd 反射型マスクの製造方法、反射型マスク用イオンビーム装置、および反射型マスク
KR101596177B1 (ko) 2011-08-25 2016-02-19 도판 인사츠 가부시키가이샤 반사형 마스크 및 그 제조 방법
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP2014229825A (ja) * 2013-05-24 2014-12-08 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法および、該マスクブランク用の反射層付基板の製造方法
NL2017602A (en) * 2015-11-02 2017-05-23 Stichting Voor Fundamenteel Onderzoek Der Materie Multilayer Reflector, Method of Manufacturing a Multilayer Reflector and Lithographic Apparatus
JP7097159B2 (ja) 2017-07-03 2022-07-07 高砂熱学工業株式会社 登録プログラム、携帯端末及び登録方法
SG11201913862WA (en) * 2017-07-05 2020-01-30 Toppan Printing Co Ltd Reflective photomask blank and reflective photomask
JP6904234B2 (ja) 2017-12-15 2021-07-14 Ａｇｃ株式会社 マスクブランク用基板およびマスクブランク
JP7401356B2 (ja) * 2019-03-27 2023-12-19 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP6931729B1 (ja) * 2020-03-27 2021-09-08 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004333711A (ja) 2003-05-02 2004-11-25 Hoya Corp 反射型マスクブランクスの製造方法及び反射型マスクの製造方法並びに反射多層膜付き基板の製造方法。
JP2008101916A (ja) 2006-10-17 2008-05-01 Canon Inc 多層膜光学素子
JP2010280931A (ja) 2009-06-03 2010-12-16 Canon Inc 多層膜成膜方法
JP2013122952A (ja) 2011-12-09 2013-06-20 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板の製造方法
JP2016514279A (ja) 2013-02-15 2016-05-19 エーエスエムエル ネザーランズ ビー．ブイ． 放射源コレクタ及び製造方法

Also Published As

Publication number Publication date
TW202117439A (zh) 2021-05-01
US12346017B2 (en) 2025-07-01
WO2021060253A1 (ja) 2021-04-01
TW202522117A (zh) 2025-06-01
TWI877228B (zh) 2025-03-21
US20220342293A1 (en) 2022-10-27
JP2024075660A (ja) 2024-06-04
CN114424119A (zh) 2022-04-29
US20250284189A1 (en) 2025-09-11
KR20220065763A (ko) 2022-05-20
JPWO2021060253A1 (enExample) 2021-04-01

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