CN114424119A - 带多层反射膜的基板、反射型掩模坯料、反射型掩模、以及半导体装置的制造方法 - Google Patents

带多层反射膜的基板、反射型掩模坯料、反射型掩模、以及半导体装置的制造方法 Download PDF

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Publication number
CN114424119A
CN114424119A CN202080066022.1A CN202080066022A CN114424119A CN 114424119 A CN114424119 A CN 114424119A CN 202080066022 A CN202080066022 A CN 202080066022A CN 114424119 A CN114424119 A CN 114424119A
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CN
China
Prior art keywords
film
multilayer reflective
reflective film
substrate
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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CN202080066022.1A
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English (en)
Chinese (zh)
Inventor
中川真德
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Hoya Corp
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Hoya Corp
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Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN114424119A publication Critical patent/CN114424119A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202080066022.1A 2019-09-26 2020-09-23 带多层反射膜的基板、反射型掩模坯料、反射型掩模、以及半导体装置的制造方法 Pending CN114424119A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019175851 2019-09-26
JP2019-175851 2019-09-26
PCT/JP2020/035728 WO2021060253A1 (ja) 2019-09-26 2020-09-23 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN114424119A true CN114424119A (zh) 2022-04-29

Family

ID=75166148

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080066022.1A Pending CN114424119A (zh) 2019-09-26 2020-09-23 带多层反射膜的基板、反射型掩模坯料、反射型掩模、以及半导体装置的制造方法

Country Status (6)

Country Link
US (2) US12346017B2 (enExample)
JP (2) JP7746160B2 (enExample)
KR (1) KR20220065763A (enExample)
CN (1) CN114424119A (enExample)
TW (2) TW202522117A (enExample)
WO (1) WO2021060253A1 (enExample)

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TWI811037B (zh) 2016-07-27 2023-08-01 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
TW202141165A (zh) 2020-03-27 2021-11-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TW202202641A (zh) 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料
US20220350233A1 (en) * 2021-05-03 2022-11-03 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
TW202532955A (zh) * 2023-12-27 2025-08-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Citations (4)

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WO2010113787A1 (ja) * 2009-03-31 2010-10-07 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
JP2010280931A (ja) * 2009-06-03 2010-12-16 Canon Inc 多層膜成膜方法
JP2012212787A (ja) * 2011-03-31 2012-11-01 Dainippon Printing Co Ltd 反射型マスクの製造方法、反射型マスク用イオンビーム装置、および反射型マスク
JP2013122952A (ja) * 2011-12-09 2013-06-20 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板の製造方法

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JPH0797159B2 (ja) 1986-10-01 1995-10-18 キヤノン株式会社 軟ｘ線・真空紫外線用多層膜反射鏡
US5310603A (en) 1986-10-01 1994-05-10 Canon Kabushiki Kaisha Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray
JPH0816720B2 (ja) 1992-04-21 1996-02-21 日本航空電子工業株式会社 軟ｘ線多層膜反射鏡
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
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JP4553239B2 (ja) * 2004-06-29 2010-09-29 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
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KR101485754B1 (ko) * 2008-09-26 2015-01-26 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용하여 제조되는 포토마스크
JP5662123B2 (ja) * 2010-02-02 2015-01-28 株式会社日立ハイテクサイエンス Ｅｕｖマスク修正装置および方法
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WO2010113787A1 (ja) * 2009-03-31 2010-10-07 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
JP2010280931A (ja) * 2009-06-03 2010-12-16 Canon Inc 多層膜成膜方法
JP2012212787A (ja) * 2011-03-31 2012-11-01 Dainippon Printing Co Ltd 反射型マスクの製造方法、反射型マスク用イオンビーム装置、および反射型マスク
JP2013122952A (ja) * 2011-12-09 2013-06-20 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板の製造方法

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JP7746160B2 (ja) 2025-09-30
TW202117439A (zh) 2021-05-01
US12346017B2 (en) 2025-07-01
WO2021060253A1 (ja) 2021-04-01
TW202522117A (zh) 2025-06-01
TWI877228B (zh) 2025-03-21
US20220342293A1 (en) 2022-10-27
JP2024075660A (ja) 2024-06-04
US20250284189A1 (en) 2025-09-11
KR20220065763A (ko) 2022-05-20
JPWO2021060253A1 (enExample) 2021-04-01

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