JP7727373B2 - 単結晶シリコンの製造方法 - Google Patents

単結晶シリコンの製造方法

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Publication number
JP7727373B2
JP7727373B2 JP2020108123A JP2020108123A JP7727373B2 JP 7727373 B2 JP7727373 B2 JP 7727373B2 JP 2020108123 A JP2020108123 A JP 2020108123A JP 2020108123 A JP2020108123 A JP 2020108123A JP 7727373 B2 JP7727373 B2 JP 7727373B2
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JP
Japan
Prior art keywords
grain boundary
polysilicon
single crystal
coincidence
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020108123A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022003004A (ja
Inventor
敦 吉田
成大 星野
昌彦 石田
武 青山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2020108123A priority Critical patent/JP7727373B2/ja
Priority to CN202110635824.6A priority patent/CN113832543A/zh
Priority to KR1020210079147A priority patent/KR20210158334A/ko
Priority to US17/353,509 priority patent/US20210395097A1/en
Priority to DE102021116090.1A priority patent/DE102021116090A1/de
Publication of JP2022003004A publication Critical patent/JP2022003004A/ja
Priority to US18/479,801 priority patent/US12479733B2/en
Priority to JP2023222172A priority patent/JP2024026594A/ja
Application granted granted Critical
Publication of JP7727373B2 publication Critical patent/JP7727373B2/ja
Priority to US19/368,938 priority patent/US20260109613A1/en
Priority to KR1020260056930A priority patent/KR20260049158A/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/08—Production of homogeneous polycrystalline material with defined structure from liquids by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/02—Particle morphology depicted by an image obtained by optical microscopy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP2020108123A 2020-06-23 2020-06-23 単結晶シリコンの製造方法 Active JP7727373B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2020108123A JP7727373B2 (ja) 2020-06-23 2020-06-23 単結晶シリコンの製造方法
CN202110635824.6A CN113832543A (zh) 2020-06-23 2021-06-08 多晶硅棒以及多晶硅棒的制造方法
KR1020210079147A KR20210158334A (ko) 2020-06-23 2021-06-18 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법
US17/353,509 US20210395097A1 (en) 2020-06-23 2021-06-21 Polysilicon rod and method for manufacturing polysilicon rod
DE102021116090.1A DE102021116090A1 (de) 2020-06-23 2021-06-22 Polysiliciumstab und verfahren zur herstellung von polysiliciumstab
US18/479,801 US12479733B2 (en) 2020-06-23 2023-10-02 Polysilicon rod and method for manufacturing polysilicon rod
JP2023222172A JP2024026594A (ja) 2020-06-23 2023-12-28 ポリシリコンロッド及びポリシリコンロッド製造方法
US19/368,938 US20260109613A1 (en) 2020-06-23 2025-10-24 Polysilicon rod and method for manufacturing polysilicon rod
KR1020260056930A KR20260049158A (ko) 2020-06-23 2026-03-30 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020108123A JP7727373B2 (ja) 2020-06-23 2020-06-23 単結晶シリコンの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023222172A Division JP2024026594A (ja) 2020-06-23 2023-12-28 ポリシリコンロッド及びポリシリコンロッド製造方法

Publications (2)

Publication Number Publication Date
JP2022003004A JP2022003004A (ja) 2022-01-11
JP7727373B2 true JP7727373B2 (ja) 2025-08-21

Family

ID=78962632

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020108123A Active JP7727373B2 (ja) 2020-06-23 2020-06-23 単結晶シリコンの製造方法
JP2023222172A Pending JP2024026594A (ja) 2020-06-23 2023-12-28 ポリシリコンロッド及びポリシリコンロッド製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023222172A Pending JP2024026594A (ja) 2020-06-23 2023-12-28 ポリシリコンロッド及びポリシリコンロッド製造方法

Country Status (5)

Country Link
US (3) US20210395097A1 (https=)
JP (2) JP7727373B2 (https=)
KR (2) KR20210158334A (https=)
CN (1) CN113832543A (https=)
DE (1) DE102021116090A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025158008A (ja) * 2024-04-03 2025-10-16 三菱マテリアル電子化成株式会社 シリコンインゴット

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007004631A1 (ja) 2005-07-04 2007-01-11 Tohoku University 粒界性格制御多結晶の作製方法
JP2008285403A (ja) 2007-05-16 2008-11-27 Wacker Chemie Ag 帯域引き上げ用の多結晶シリコンロッド及びその製造方法
JP2013193902A (ja) 2012-03-16 2013-09-30 Tokuyama Corp 多結晶シリコンロッド
JP2014028747A (ja) 2012-06-29 2014-02-13 Mitsubishi Materials Corp 多結晶シリコンロッド
JP2014080352A (ja) 2012-10-15 2014-05-08 Wacker Chemie Ag 多結晶シリコンの堆積のための方法
JP2018150236A (ja) 2018-05-21 2018-09-27 信越化学工業株式会社 多結晶シリコン、多結晶シリコン製造用反応炉及び多結晶シリコンの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
JP5828795B2 (ja) 2012-04-04 2015-12-09 信越化学工業株式会社 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法
JP5712176B2 (ja) * 2012-08-06 2015-05-07 信越化学工業株式会社 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法
JP5947248B2 (ja) 2013-06-21 2016-07-06 信越化学工業株式会社 多結晶シリコン棒の選択方法
JP6314097B2 (ja) 2015-02-19 2018-04-18 信越化学工業株式会社 多結晶シリコン棒
TWI557281B (zh) * 2015-07-17 2016-11-11 中美矽晶製品股份有限公司 多晶矽晶鑄錠、多晶矽晶棒及多晶矽晶片
JP6969917B2 (ja) 2017-07-12 2021-11-24 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法
JP6770570B2 (ja) 2018-12-28 2020-10-14 キヤノン株式会社 通信装置、通信装置の制御方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007004631A1 (ja) 2005-07-04 2007-01-11 Tohoku University 粒界性格制御多結晶の作製方法
JP2008285403A (ja) 2007-05-16 2008-11-27 Wacker Chemie Ag 帯域引き上げ用の多結晶シリコンロッド及びその製造方法
JP2013193902A (ja) 2012-03-16 2013-09-30 Tokuyama Corp 多結晶シリコンロッド
JP2014028747A (ja) 2012-06-29 2014-02-13 Mitsubishi Materials Corp 多結晶シリコンロッド
JP2014080352A (ja) 2012-10-15 2014-05-08 Wacker Chemie Ag 多結晶シリコンの堆積のための方法
JP2018150236A (ja) 2018-05-21 2018-09-27 信越化学工業株式会社 多結晶シリコン、多結晶シリコン製造用反応炉及び多結晶シリコンの製造方法

Also Published As

Publication number Publication date
US20260109613A1 (en) 2026-04-23
CN113832543A (zh) 2021-12-24
KR20260049158A (ko) 2026-04-13
US20240025754A1 (en) 2024-01-25
DE102021116090A1 (de) 2022-03-03
JP2022003004A (ja) 2022-01-11
US20210395097A1 (en) 2021-12-23
KR20210158334A (ko) 2021-12-30
JP2024026594A (ja) 2024-02-28
US12479733B2 (en) 2025-11-25

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