KR20210158334A - 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법 - Google Patents

폴리실리콘 로드 및 폴리실리콘 로드 제조 방법 Download PDF

Info

Publication number
KR20210158334A
KR20210158334A KR1020210079147A KR20210079147A KR20210158334A KR 20210158334 A KR20210158334 A KR 20210158334A KR 1020210079147 A KR1020210079147 A KR 1020210079147A KR 20210079147 A KR20210079147 A KR 20210079147A KR 20210158334 A KR20210158334 A KR 20210158334A
Authority
KR
South Korea
Prior art keywords
grain boundary
polysilicon
polysilicon rod
length
ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020210079147A
Other languages
English (en)
Korean (ko)
Inventor
아츠시 요시다
나루히로 호시노
마사히코 이시다
다케시 아오야마
Original Assignee
신에쓰 가가꾸 고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신에쓰 가가꾸 고교 가부시끼가이샤 filed Critical 신에쓰 가가꾸 고교 가부시끼가이샤
Publication of KR20210158334A publication Critical patent/KR20210158334A/ko
Priority to KR1020260056930A priority Critical patent/KR20260049158A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/08—Production of homogeneous polycrystalline material with defined structure from liquids by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/02—Particle morphology depicted by an image obtained by optical microscopy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020210079147A 2020-06-23 2021-06-18 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법 Pending KR20210158334A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020260056930A KR20260049158A (ko) 2020-06-23 2026-03-30 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020108123A JP7727373B2 (ja) 2020-06-23 2020-06-23 単結晶シリコンの製造方法
JPJP-P-2020-108123 2020-06-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020260056930A Division KR20260049158A (ko) 2020-06-23 2026-03-30 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법

Publications (1)

Publication Number Publication Date
KR20210158334A true KR20210158334A (ko) 2021-12-30

Family

ID=78962632

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020210079147A Pending KR20210158334A (ko) 2020-06-23 2021-06-18 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법
KR1020260056930A Pending KR20260049158A (ko) 2020-06-23 2026-03-30 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020260056930A Pending KR20260049158A (ko) 2020-06-23 2026-03-30 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법

Country Status (5)

Country Link
US (3) US20210395097A1 (https=)
JP (2) JP7727373B2 (https=)
KR (2) KR20210158334A (https=)
CN (1) CN113832543A (https=)
DE (1) DE102021116090A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025158008A (ja) * 2024-04-03 2025-10-16 三菱マテリアル電子化成株式会社 シリコンインゴット

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008285403A (ja) 2007-05-16 2008-11-27 Wacker Chemie Ag 帯域引き上げ用の多結晶シリコンロッド及びその製造方法
JP2013193902A (ja) 2012-03-16 2013-09-30 Tokuyama Corp 多結晶シリコンロッド
JP2013217653A (ja) 2012-04-04 2013-10-24 Shin Etsu Chem Co Ltd 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法
JP2014028747A (ja) 2012-06-29 2014-02-13 Mitsubishi Materials Corp 多結晶シリコンロッド
JP2015003844A (ja) 2013-06-21 2015-01-08 信越化学工業株式会社 多結晶シリコンの結晶性評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法
JP2016150885A (ja) 2015-02-19 2016-08-22 信越化学工業株式会社 多結晶シリコン棒とその製造方法およびｆｚシリコン単結晶
JP2019019010A (ja) 2017-07-12 2019-02-07 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
WO2007004631A1 (ja) 2005-07-04 2007-01-11 Tohoku University 粒界性格制御多結晶の作製方法
JP5712176B2 (ja) * 2012-08-06 2015-05-07 信越化学工業株式会社 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法
DE102012218747A1 (de) 2012-10-15 2014-04-17 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
TWI557281B (zh) * 2015-07-17 2016-11-11 中美矽晶製品股份有限公司 多晶矽晶鑄錠、多晶矽晶棒及多晶矽晶片
JP6694002B2 (ja) 2018-05-21 2020-05-13 信越化学工業株式会社 多結晶シリコンの製造方法
JP6770570B2 (ja) 2018-12-28 2020-10-14 キヤノン株式会社 通信装置、通信装置の制御方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008285403A (ja) 2007-05-16 2008-11-27 Wacker Chemie Ag 帯域引き上げ用の多結晶シリコンロッド及びその製造方法
JP2013193902A (ja) 2012-03-16 2013-09-30 Tokuyama Corp 多結晶シリコンロッド
JP2013217653A (ja) 2012-04-04 2013-10-24 Shin Etsu Chem Co Ltd 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法
JP2014028747A (ja) 2012-06-29 2014-02-13 Mitsubishi Materials Corp 多結晶シリコンロッド
JP2017197431A (ja) 2012-06-29 2017-11-02 三菱マテリアル株式会社 多結晶シリコンロッド
JP2015003844A (ja) 2013-06-21 2015-01-08 信越化学工業株式会社 多結晶シリコンの結晶性評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法
JP2016150885A (ja) 2015-02-19 2016-08-22 信越化学工業株式会社 多結晶シリコン棒とその製造方法およびｆｚシリコン単結晶
JP2019019010A (ja) 2017-07-12 2019-02-07 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法

Also Published As

Publication number Publication date
US20260109613A1 (en) 2026-04-23
CN113832543A (zh) 2021-12-24
KR20260049158A (ko) 2026-04-13
US20240025754A1 (en) 2024-01-25
DE102021116090A1 (de) 2022-03-03
JP2022003004A (ja) 2022-01-11
US20210395097A1 (en) 2021-12-23
JP7727373B2 (ja) 2025-08-21
JP2024026594A (ja) 2024-02-28
US12479733B2 (en) 2025-11-25

Similar Documents

Publication Publication Date Title
JP5828795B2 (ja) 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法
EP3012620A1 (en) Method for evaluating crystallinity of polycrystalline silicon
EP2863212A1 (en) Polycrystalline silicon crystal orientation degree evaluation method, polycrystalline silicon rod selection method, polycrystalline silicon rod, polycrystalline silicon ingot, and polycrystalline silicon fabrication method
EP2826748A1 (en) Polycrystalline silicon rod
CN107250038B (zh) 多晶硅棒及其制造方法和fz硅单晶
KR20260049158A (ko) 폴리실리콘 로드 및 폴리실리콘 로드 제조 방법
EP3015853A1 (en) Method for evaluating crystal grain size distribution of polycrystalline silicon
JP5969956B2 (ja) 多結晶シリコンの粒径評価方法および多結晶シリコン棒の選択方法
KR102405621B1 (ko) 다결정 실리콘 봉 및 다결정 실리콘 봉의 선별 방법
US10914021B2 (en) Polycrystalline silicon rod and method for producing single crystal silicon
JP5984741B2 (ja) 多結晶シリコン棒の選択方法、および、ｆｚ単結晶シリコンの製造方法
JP6345108B2 (ja) 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法
KR20170114925A (ko) 다결정 실리콘, fz 단결정 실리콘, 및 그의 제조 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

A16 Divisional, continuation or continuation in part application filed

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A16-DIV-PA0107 (AS PROVIDED BY THE NATIONAL OFFICE)

A18 Application divided or continuation or continuation in part accepted

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A18-DIV-PA0107 (AS PROVIDED BY THE NATIONAL OFFICE)

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107