CN113832543A - 多晶硅棒以及多晶硅棒的制造方法 - Google Patents

多晶硅棒以及多晶硅棒的制造方法 Download PDF

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Publication number
CN113832543A
CN113832543A CN202110635824.6A CN202110635824A CN113832543A CN 113832543 A CN113832543 A CN 113832543A CN 202110635824 A CN202110635824 A CN 202110635824A CN 113832543 A CN113832543 A CN 113832543A
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CN
China
Prior art keywords
grain boundary
polycrystalline silicon
silicon rod
width
grain
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Pending
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CN202110635824.6A
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English (en)
Chinese (zh)
Inventor
吉田敦
星野成大
石田昌彦
青山武
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of CN113832543A publication Critical patent/CN113832543A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/08—Production of homogeneous polycrystalline material with defined structure from liquids by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/02—Particle morphology depicted by an image obtained by optical microscopy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
CN202110635824.6A 2020-06-23 2021-06-08 多晶硅棒以及多晶硅棒的制造方法 Pending CN113832543A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-108123 2020-06-23
JP2020108123A JP7727373B2 (ja) 2020-06-23 2020-06-23 単結晶シリコンの製造方法

Publications (1)

Publication Number Publication Date
CN113832543A true CN113832543A (zh) 2021-12-24

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CN202110635824.6A Pending CN113832543A (zh) 2020-06-23 2021-06-08 多晶硅棒以及多晶硅棒的制造方法

Country Status (5)

Country Link
US (3) US20210395097A1 (https=)
JP (2) JP7727373B2 (https=)
KR (2) KR20210158334A (https=)
CN (1) CN113832543A (https=)
DE (1) DE102021116090A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI913146B (zh) * 2024-04-03 2026-01-21 日商三菱綜合材料電子化成股份有限公司 矽錠

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
WO2007004631A1 (ja) 2005-07-04 2007-01-11 Tohoku University 粒界性格制御多結晶の作製方法
DE102007023041A1 (de) 2007-05-16 2008-11-20 Wacker Chemie Ag Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung
JP5969230B2 (ja) 2012-03-16 2016-08-17 株式会社トクヤマ 多結晶シリコンロッド
JP5828795B2 (ja) 2012-04-04 2015-12-09 信越化学工業株式会社 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法
CN103510156A (zh) 2012-06-29 2014-01-15 三菱综合材料株式会社 多晶硅棒
JP5712176B2 (ja) * 2012-08-06 2015-05-07 信越化学工業株式会社 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法
DE102012218747A1 (de) 2012-10-15 2014-04-17 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
JP5947248B2 (ja) 2013-06-21 2016-07-06 信越化学工業株式会社 多結晶シリコン棒の選択方法
JP6314097B2 (ja) 2015-02-19 2018-04-18 信越化学工業株式会社 多結晶シリコン棒
TWI557281B (zh) * 2015-07-17 2016-11-11 中美矽晶製品股份有限公司 多晶矽晶鑄錠、多晶矽晶棒及多晶矽晶片
JP6969917B2 (ja) 2017-07-12 2021-11-24 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法
JP6694002B2 (ja) 2018-05-21 2020-05-13 信越化学工業株式会社 多結晶シリコンの製造方法
JP6770570B2 (ja) 2018-12-28 2020-10-14 キヤノン株式会社 通信装置、通信装置の制御方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI913146B (zh) * 2024-04-03 2026-01-21 日商三菱綜合材料電子化成股份有限公司 矽錠

Also Published As

Publication number Publication date
US20260109613A1 (en) 2026-04-23
KR20260049158A (ko) 2026-04-13
US20240025754A1 (en) 2024-01-25
DE102021116090A1 (de) 2022-03-03
JP2022003004A (ja) 2022-01-11
US20210395097A1 (en) 2021-12-23
KR20210158334A (ko) 2021-12-30
JP7727373B2 (ja) 2025-08-21
JP2024026594A (ja) 2024-02-28
US12479733B2 (en) 2025-11-25

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