DE102021116090A1 - Polysiliciumstab und verfahren zur herstellung von polysiliciumstab - Google Patents

Polysiliciumstab und verfahren zur herstellung von polysiliciumstab Download PDF

Info

Publication number
DE102021116090A1
DE102021116090A1 DE102021116090.1A DE102021116090A DE102021116090A1 DE 102021116090 A1 DE102021116090 A1 DE 102021116090A1 DE 102021116090 A DE102021116090 A DE 102021116090A DE 102021116090 A1 DE102021116090 A1 DE 102021116090A1
Authority
DE
Germany
Prior art keywords
grain boundary
polysilicon
coincidence
length
exceed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102021116090.1A
Other languages
German (de)
English (en)
Inventor
Atsushi Yoshida
Naruhiro Hoshino
Masahiko Ishida
Takeshi Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of DE102021116090A1 publication Critical patent/DE102021116090A1/de
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/08—Production of homogeneous polycrystalline material with defined structure from liquids by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/02—Particle morphology depicted by an image obtained by optical microscopy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DE102021116090.1A 2020-06-23 2021-06-22 Polysiliciumstab und verfahren zur herstellung von polysiliciumstab Pending DE102021116090A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-108123 2020-06-23
JP2020108123A JP7727373B2 (ja) 2020-06-23 2020-06-23 単結晶シリコンの製造方法

Publications (1)

Publication Number Publication Date
DE102021116090A1 true DE102021116090A1 (de) 2022-03-03

Family

ID=78962632

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102021116090.1A Pending DE102021116090A1 (de) 2020-06-23 2021-06-22 Polysiliciumstab und verfahren zur herstellung von polysiliciumstab

Country Status (5)

Country Link
US (3) US20210395097A1 (https=)
JP (2) JP7727373B2 (https=)
KR (2) KR20210158334A (https=)
CN (1) CN113832543A (https=)
DE (1) DE102021116090A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025158008A (ja) * 2024-04-03 2025-10-16 三菱マテリアル電子化成株式会社 シリコンインゴット

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008285403A (ja) 2007-05-16 2008-11-27 Wacker Chemie Ag 帯域引き上げ用の多結晶シリコンロッド及びその製造方法
JP2013193902A (ja) 2012-03-16 2013-09-30 Tokuyama Corp 多結晶シリコンロッド
JP2013217653A (ja) 2012-04-04 2013-10-24 Shin Etsu Chem Co Ltd 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法
JP2014028747A (ja) 2012-06-29 2014-02-13 Mitsubishi Materials Corp 多結晶シリコンロッド
JP2015003844A (ja) 2013-06-21 2015-01-08 信越化学工業株式会社 多結晶シリコンの結晶性評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法
JP2016150885A (ja) 2015-02-19 2016-08-22 信越化学工業株式会社 多結晶シリコン棒とその製造方法およびｆｚシリコン単結晶
JP2019019010A (ja) 2017-07-12 2019-02-07 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法
JP2020108123A (ja) 2018-12-28 2020-07-09 キヤノン株式会社 通信装置、通信装置の制御方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
WO2007004631A1 (ja) 2005-07-04 2007-01-11 Tohoku University 粒界性格制御多結晶の作製方法
JP5712176B2 (ja) * 2012-08-06 2015-05-07 信越化学工業株式会社 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法
DE102012218747A1 (de) 2012-10-15 2014-04-17 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
TWI557281B (zh) * 2015-07-17 2016-11-11 中美矽晶製品股份有限公司 多晶矽晶鑄錠、多晶矽晶棒及多晶矽晶片
JP6694002B2 (ja) 2018-05-21 2020-05-13 信越化学工業株式会社 多結晶シリコンの製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008285403A (ja) 2007-05-16 2008-11-27 Wacker Chemie Ag 帯域引き上げ用の多結晶シリコンロッド及びその製造方法
JP2013193902A (ja) 2012-03-16 2013-09-30 Tokuyama Corp 多結晶シリコンロッド
JP2013217653A (ja) 2012-04-04 2013-10-24 Shin Etsu Chem Co Ltd 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法
JP2014028747A (ja) 2012-06-29 2014-02-13 Mitsubishi Materials Corp 多結晶シリコンロッド
JP2017197431A (ja) 2012-06-29 2017-11-02 三菱マテリアル株式会社 多結晶シリコンロッド
JP2015003844A (ja) 2013-06-21 2015-01-08 信越化学工業株式会社 多結晶シリコンの結晶性評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法
JP2016150885A (ja) 2015-02-19 2016-08-22 信越化学工業株式会社 多結晶シリコン棒とその製造方法およびｆｚシリコン単結晶
JP2019019010A (ja) 2017-07-12 2019-02-07 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法
JP2020108123A (ja) 2018-12-28 2020-07-09 キヤノン株式会社 通信装置、通信装置の制御方法

Also Published As

Publication number Publication date
US20260109613A1 (en) 2026-04-23
CN113832543A (zh) 2021-12-24
KR20260049158A (ko) 2026-04-13
US20240025754A1 (en) 2024-01-25
JP2022003004A (ja) 2022-01-11
US20210395097A1 (en) 2021-12-23
KR20210158334A (ko) 2021-12-30
JP7727373B2 (ja) 2025-08-21
JP2024026594A (ja) 2024-02-28
US12479733B2 (en) 2025-11-25

Similar Documents

Publication Publication Date Title
EP0829559B1 (de) Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
DE69530161T2 (de) Diamant-Einkristall mit niedriger Fehlerdichte und Verfahren zu dessen Herstellung
DE112017002662B4 (de) Verfahren zur Herstellung von Silicium-Einkristall
DE69021268T2 (de) Verfahren zur Herstellung eines Hochdruckphasenmaterials.
DE69207454T2 (de) Verfahren und Vorrichtung für die Herstellung eines Silizium-Einkristalls
DE69900210T2 (de) Einkristallines Siliziumwafer und Verfahren zu seiner Herstellung
DE112013001054B4 (de) Verfahren zum Herstellen eines Silizium-Einkristall-Wafers
DE69615094T2 (de) Verfahren zur Herstellung eines Einkristallstabes mit gleichmässiger Verteilung Gitterdefekten und Verwendung einer Vorrichtung dafür
DE69418574T2 (de) Optisch verbesserte Diamant-Drahtziehmatrize
DE112014006413B4 (de) Herstellungsverfahren für epitaktischen Siliciumwafer
DE112016003701T5 (de) Polykristalliner Siliciumstab
DE112014000431B4 (de) Verfahren zum Herstellen eines Silizium-Einkristall-lngots
DE69508473T2 (de) Verfahren zur Herstellung von Silizium-Einkristall und Tiegel aus geschmolzenem Silika dafür
DE3217026C2 (https=)
DE112015002599B4 (de) Silicium-Wafer und Verfahren zu dessen Herstellung
DE112019006417B4 (de) Quarzglastiegel und herstellungsverfahren für einen silicium-einkristall
DE112017006543B4 (de) SiC-WAFER, HALBLEITERVORRICHTUNG, VERFAHREN ZUR HERSTELLUNG DES SiC-WAFERS UND VERFAHREN ZUR NACHVERFOLGUNG VON DEFEKTEN IN SiC-WAFERN UND HALBLEITERVORRICHTUNGEN
DE102021116090A1 (de) Polysiliciumstab und verfahren zur herstellung von polysiliciumstab
DE112018001896T5 (de) Wärmeabschirmbauteil, Einkristall-Ziehvorrichtung und Verfahren zur Herstellung eines Silicium-Einkristall-Ingots
DE112014005529B4 (de) Verfahren zum Züchten eines Silizium-Einkristalls
DE102018004823B4 (de) Polykristalliner Siliciumstab
DE112006000816T5 (de) Produktionsverfahren für Siliziumeinkristall, getemperter Wafer und Produktionsverfahren für getemperten Wafer
EP3940124B1 (de) Kristallstück aus monokristallinem silizium
DE69905605T2 (de) Verfahren zur messung der grösse von polykristallinenbruchstückeund ihrer verteilung beim zufuhr in einem czochralski verfahren
DE102018008145B4 (de) Verfahren zum Handhaben eines polykrystallinen Silicumstabs

Legal Events

Date Code Title Description
R012 Request for examination validly filed