JP7610982B2 - マルチスペクトル光センサ - Google Patents
マルチスペクトル光センサ Download PDFInfo
- Publication number
- JP7610982B2 JP7610982B2 JP2020551524A JP2020551524A JP7610982B2 JP 7610982 B2 JP7610982 B2 JP 7610982B2 JP 2020551524 A JP2020551524 A JP 2020551524A JP 2020551524 A JP2020551524 A JP 2020551524A JP 7610982 B2 JP7610982 B2 JP 7610982B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- array
- photodiodes
- guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0229—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using masks, aperture plates, spatial light modulators or spatial filters, e.g. reflective filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0256—Compact construction
- G01J3/0259—Monolithic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0262—Constructional arrangements for removing stray light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
- G01J2003/2806—Array and filter array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
- G01J2003/2826—Multispectral imaging, e.g. filter imaging
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Spectrometry And Color Measurement (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/941,855 US10770489B2 (en) | 2018-03-30 | 2018-03-30 | Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and N-well regions |
| US15/941,855 | 2018-03-30 | ||
| PCT/US2019/024761 WO2019191543A1 (en) | 2018-03-30 | 2019-03-29 | Multi-spectral light sensor |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021519511A JP2021519511A (ja) | 2021-08-10 |
| JP2021519511A5 JP2021519511A5 (https=) | 2022-04-05 |
| JPWO2019191543A5 JPWO2019191543A5 (https=) | 2022-04-05 |
| JP7610982B2 true JP7610982B2 (ja) | 2025-01-09 |
Family
ID=68053873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020551524A Active JP7610982B2 (ja) | 2018-03-30 | 2019-03-29 | マルチスペクトル光センサ |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10770489B2 (https=) |
| EP (1) | EP3759742B1 (https=) |
| JP (1) | JP7610982B2 (https=) |
| KR (1) | KR102747259B1 (https=) |
| CN (1) | CN112088434B (https=) |
| IL (1) | IL277562B2 (https=) |
| TW (1) | TWI809074B (https=) |
| WO (1) | WO2019191543A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12009379B2 (en) * | 2017-05-01 | 2024-06-11 | Visera Technologies Company Limited | Image sensor |
| US10770489B2 (en) * | 2018-03-30 | 2020-09-08 | Vishay Intertechnology, Inc. | Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and N-well regions |
| US11287368B2 (en) * | 2018-07-13 | 2022-03-29 | Halliburton Energy Services, Inc. | Thin film multivariate optical element and detector combinations, thin film optical detectors, and downhole optical computing systems |
| US10651220B2 (en) | 2018-07-30 | 2020-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Narrow band filter with high transmission |
| CN112654858B (zh) * | 2018-09-04 | 2024-08-27 | 艾迈斯-欧司朗股份有限公司 | 生物标志物读取器 |
| US11404468B2 (en) | 2019-06-21 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wavelength tunable narrow band filter |
| CN110931516B (zh) * | 2019-11-18 | 2021-11-19 | 中国科学院上海技术物理研究所 | 一种用于红外宽光谱分光快速测温的碲镉汞光导器件 |
| GB2595305A (en) * | 2020-05-22 | 2021-11-24 | Ams Ag | Optical detector |
| JP7818358B2 (ja) * | 2020-07-23 | 2026-02-20 | 三星電子株式会社 | イメージセンサ及びイメージ処理方法、並びにイメージセンサを含む電子装置 |
| JPWO2022044692A1 (https=) * | 2020-08-24 | 2022-03-03 | ||
| GB202015948D0 (en) * | 2020-10-08 | 2020-11-25 | ams Sensors Germany GmbH | Multi-spectral optical sensor and system |
| CN121712249A (zh) | 2020-10-23 | 2026-03-20 | Tdk株式会社 | 接收装置、发送接收装置、通信系统和便携终端装置 |
| JP2022101452A (ja) * | 2020-12-24 | 2022-07-06 | Tdk株式会社 | 光センサー、光センサーユニット、光センサー装置及び情報端末装置 |
| CN115236782B (zh) | 2021-04-22 | 2026-03-13 | 三星电子株式会社 | 光谱滤波器以及包括光谱滤波器的图像传感器和电子设备 |
| US20230093853A1 (en) * | 2021-09-30 | 2023-03-30 | Samsung Electronics Co., Ltd. | Spectral filter, and image sensor and electronic device including the spectral filter |
| US20230157061A1 (en) * | 2021-11-17 | 2023-05-18 | The Trustees Of Princeton University | Reconfigurable thin-film photonic filter banks for neuromorphic opto-electronic systems and methods |
| CN114526816B (zh) * | 2021-12-29 | 2024-03-15 | 光沦科技(深圳)有限公司 | 一种微型多光谱-3d多模式相机系统及成像方法 |
| US20240145298A1 (en) * | 2022-10-26 | 2024-05-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doping free connection structures and methods |
| TWI828466B (zh) * | 2022-12-08 | 2024-01-01 | 台亞半導體股份有限公司 | 光電二極體結構 |
Citations (9)
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| JP2000138863A (ja) | 1998-09-22 | 2000-05-16 | Di Yan Shao | プロセススケ―ラブルな高空間分解能及び低ビット分解能cmosエリア画像センサ |
| US20090159785A1 (en) | 2005-07-06 | 2009-06-25 | Koon-Wing Tsang | Optical sensing device |
| JP2010232509A (ja) | 2009-03-27 | 2010-10-14 | Oki Semiconductor Co Ltd | 光半導体および光半導体の製造方法 |
| JP2013079873A (ja) | 2011-10-04 | 2013-05-02 | Hamamatsu Photonics Kk | 分光センサ |
| JP2013242179A (ja) | 2012-05-18 | 2013-12-05 | Hamamatsu Photonics Kk | 分光センサ |
| WO2016117596A1 (ja) | 2015-01-21 | 2016-07-28 | Jsr株式会社 | 固体撮像装置、赤外線吸収性組成物及び平坦化膜形成用硬化性組成物 |
| US20170005132A1 (en) | 2015-06-30 | 2017-01-05 | Imec Vzw | Integrated circuit and method for manufacturing integrated circuit |
| JP2017175102A (ja) | 2016-03-16 | 2017-09-28 | ソニー株式会社 | 光電変換素子及びその製造方法並びに撮像装置 |
| CN107331677A (zh) | 2017-07-19 | 2017-11-07 | 北京思比科微电子技术股份有限公司 | 一种多光谱成像的图像传感器 |
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| JP5803419B2 (ja) * | 2011-08-19 | 2015-11-04 | セイコーエプソン株式会社 | 傾斜構造体、傾斜構造体の製造方法、及び分光センサー |
| JP2013088557A (ja) * | 2011-10-17 | 2013-05-13 | Toshiba Corp | 固体撮像装置、及び固体撮像装置の製造方法 |
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| KR102286109B1 (ko) * | 2014-08-05 | 2021-08-04 | 삼성전자주식회사 | 이미지 픽셀, 이를 포함하는 이미지 센서, 및 이를 포함하는 이미지 처리 시스템 |
| KR102356695B1 (ko) * | 2014-08-18 | 2022-01-26 | 삼성전자주식회사 | 광 유도 부재를 가지는 이미지 센서 |
| KR102263042B1 (ko) * | 2014-10-16 | 2021-06-09 | 삼성전자주식회사 | 픽셀, 상기 픽셀을 포함하는 이미지 센서, 및 상기 픽셀을 포함하는 이미지 처리 시스템 |
| TW201641659A (zh) * | 2015-05-08 | 2016-12-01 | Jsr股份有限公司 | 光感測器裝置及含有光感測器裝置的電子機器、紅外線吸收性組成物、以及紅外線截止濾光片層的形成方法 |
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| EP3182079B1 (en) * | 2015-12-14 | 2023-08-23 | ams AG | Optical sensing device and method for manufacturing an optical sensing device |
| US10770505B2 (en) * | 2017-04-05 | 2020-09-08 | Intel Corporation | Per-pixel performance improvement for combined visible and ultraviolet image sensor arrays |
| CN107195650B (zh) * | 2017-06-13 | 2024-05-03 | 江苏城讯成联网络科技有限公司 | 多光谱摄像装置 |
| US10770489B2 (en) * | 2018-03-30 | 2020-09-08 | Vishay Intertechnology, Inc. | Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and N-well regions |
-
2018
- 2018-03-30 US US15/941,855 patent/US10770489B2/en active Active
-
2019
- 2019-03-29 WO PCT/US2019/024761 patent/WO2019191543A1/en not_active Ceased
- 2019-03-29 JP JP2020551524A patent/JP7610982B2/ja active Active
- 2019-03-29 TW TW108111150A patent/TWI809074B/zh active
- 2019-03-29 IL IL277562A patent/IL277562B2/en unknown
- 2019-03-29 EP EP19775519.2A patent/EP3759742B1/en active Active
- 2019-03-29 KR KR1020207031537A patent/KR102747259B1/ko active Active
- 2019-03-29 CN CN201980030557.0A patent/CN112088434B/zh active Active
-
2020
- 2020-09-04 US US17/012,683 patent/US11862648B2/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000138863A (ja) | 1998-09-22 | 2000-05-16 | Di Yan Shao | プロセススケ―ラブルな高空間分解能及び低ビット分解能cmosエリア画像センサ |
| US20090159785A1 (en) | 2005-07-06 | 2009-06-25 | Koon-Wing Tsang | Optical sensing device |
| JP2010232509A (ja) | 2009-03-27 | 2010-10-14 | Oki Semiconductor Co Ltd | 光半導体および光半導体の製造方法 |
| JP2013079873A (ja) | 2011-10-04 | 2013-05-02 | Hamamatsu Photonics Kk | 分光センサ |
| JP2013242179A (ja) | 2012-05-18 | 2013-12-05 | Hamamatsu Photonics Kk | 分光センサ |
| WO2016117596A1 (ja) | 2015-01-21 | 2016-07-28 | Jsr株式会社 | 固体撮像装置、赤外線吸収性組成物及び平坦化膜形成用硬化性組成物 |
| US20170005132A1 (en) | 2015-06-30 | 2017-01-05 | Imec Vzw | Integrated circuit and method for manufacturing integrated circuit |
| JP2017175102A (ja) | 2016-03-16 | 2017-09-28 | ソニー株式会社 | 光電変換素子及びその製造方法並びに撮像装置 |
| CN107331677A (zh) | 2017-07-19 | 2017-11-07 | 北京思比科微电子技术股份有限公司 | 一种多光谱成像的图像传感器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190305016A1 (en) | 2019-10-03 |
| JP2021519511A (ja) | 2021-08-10 |
| TWI809074B (zh) | 2023-07-21 |
| US10770489B2 (en) | 2020-09-08 |
| US20200403013A1 (en) | 2020-12-24 |
| CN112088434B (zh) | 2024-05-28 |
| TW201943115A (zh) | 2019-11-01 |
| WO2019191543A1 (en) | 2019-10-03 |
| US11862648B2 (en) | 2024-01-02 |
| EP3759742A1 (en) | 2021-01-06 |
| KR20200140320A (ko) | 2020-12-15 |
| EP3759742A4 (en) | 2022-03-30 |
| EP3759742B1 (en) | 2024-03-13 |
| KR102747259B1 (ko) | 2024-12-26 |
| IL277562B2 (en) | 2025-12-01 |
| CN112088434A (zh) | 2020-12-15 |
| IL277562A (en) | 2020-11-30 |
| IL277562B1 (en) | 2025-08-01 |
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