IL277562B2 - Multi-spectral light sensor - Google Patents

Multi-spectral light sensor

Info

Publication number
IL277562B2
IL277562B2 IL277562A IL27756220A IL277562B2 IL 277562 B2 IL277562 B2 IL 277562B2 IL 277562 A IL277562 A IL 277562A IL 27756220 A IL27756220 A IL 27756220A IL 277562 B2 IL277562 B2 IL 277562B2
Authority
IL
Israel
Prior art keywords
light
layer
array
photodiodes
filter
Prior art date
Application number
IL277562A
Other languages
English (en)
Hebrew (he)
Other versions
IL277562A (en
IL277562B1 (en
Inventor
Tsang Koon-Wing
Lin Yuh-Min
Original Assignee
Vishay Intertechnology Inc
Koon Wing Tsang
Yuh Min Lin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Intertechnology Inc, Koon Wing Tsang, Yuh Min Lin filed Critical Vishay Intertechnology Inc
Publication of IL277562A publication Critical patent/IL277562A/en
Publication of IL277562B1 publication Critical patent/IL277562B1/en
Publication of IL277562B2 publication Critical patent/IL277562B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
    • G01J3/0229—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using masks, aperture plates, spatial light modulators or spatial filters, e.g. reflective filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0256—Compact construction
    • G01J3/0259—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0262—Constructional arrangements for removing stray light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G01J2003/2806—Array and filter array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G01J2003/2826—Multispectral imaging, e.g. filter imaging

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
IL277562A 2018-03-30 2019-03-29 Multi-spectral light sensor IL277562B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/941,855 US10770489B2 (en) 2018-03-30 2018-03-30 Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and N-well regions
PCT/US2019/024761 WO2019191543A1 (en) 2018-03-30 2019-03-29 Multi-spectral light sensor

Publications (3)

Publication Number Publication Date
IL277562A IL277562A (en) 2020-11-30
IL277562B1 IL277562B1 (en) 2025-08-01
IL277562B2 true IL277562B2 (en) 2025-12-01

Family

ID=68053873

Family Applications (1)

Application Number Title Priority Date Filing Date
IL277562A IL277562B2 (en) 2018-03-30 2019-03-29 Multi-spectral light sensor

Country Status (8)

Country Link
US (2) US10770489B2 (https=)
EP (1) EP3759742B1 (https=)
JP (1) JP7610982B2 (https=)
KR (1) KR102747259B1 (https=)
CN (1) CN112088434B (https=)
IL (1) IL277562B2 (https=)
TW (1) TWI809074B (https=)
WO (1) WO2019191543A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12009379B2 (en) * 2017-05-01 2024-06-11 Visera Technologies Company Limited Image sensor
US10770489B2 (en) * 2018-03-30 2020-09-08 Vishay Intertechnology, Inc. Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and N-well regions
US11287368B2 (en) * 2018-07-13 2022-03-29 Halliburton Energy Services, Inc. Thin film multivariate optical element and detector combinations, thin film optical detectors, and downhole optical computing systems
US10651220B2 (en) 2018-07-30 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Narrow band filter with high transmission
CN112654858B (zh) * 2018-09-04 2024-08-27 艾迈斯-欧司朗股份有限公司 生物标志物读取器
US11404468B2 (en) 2019-06-21 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Wavelength tunable narrow band filter
CN110931516B (zh) * 2019-11-18 2021-11-19 中国科学院上海技术物理研究所 一种用于红外宽光谱分光快速测温的碲镉汞光导器件
GB2595305A (en) * 2020-05-22 2021-11-24 Ams Ag Optical detector
JP7818358B2 (ja) * 2020-07-23 2026-02-20 三星電子株式会社 イメージセンサ及びイメージ処理方法、並びにイメージセンサを含む電子装置
JPWO2022044692A1 (https=) * 2020-08-24 2022-03-03
GB202015948D0 (en) * 2020-10-08 2020-11-25 ams Sensors Germany GmbH Multi-spectral optical sensor and system
CN121712249A (zh) 2020-10-23 2026-03-20 Tdk株式会社 接收装置、发送接收装置、通信系统和便携终端装置
JP2022101452A (ja) * 2020-12-24 2022-07-06 Tdk株式会社 光センサー、光センサーユニット、光センサー装置及び情報端末装置
CN115236782B (zh) 2021-04-22 2026-03-13 三星电子株式会社 光谱滤波器以及包括光谱滤波器的图像传感器和电子设备
US20230093853A1 (en) * 2021-09-30 2023-03-30 Samsung Electronics Co., Ltd. Spectral filter, and image sensor and electronic device including the spectral filter
US20230157061A1 (en) * 2021-11-17 2023-05-18 The Trustees Of Princeton University Reconfigurable thin-film photonic filter banks for neuromorphic opto-electronic systems and methods
CN114526816B (zh) * 2021-12-29 2024-03-15 光沦科技(深圳)有限公司 一种微型多光谱-3d多模式相机系统及成像方法
US20240145298A1 (en) * 2022-10-26 2024-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Doping free connection structures and methods
TWI828466B (zh) * 2022-12-08 2024-01-01 台亞半導體股份有限公司 光電二極體結構

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040113051A1 (en) * 2002-11-20 2004-06-17 Jun-Young Kim Silicon optoelectronic device and image input/output device using the silicon optoelectronic device
US20090159785A1 (en) * 2005-07-06 2009-06-25 Koon-Wing Tsang Optical sensing device
US20120118318A1 (en) * 2008-12-16 2012-05-17 Dyrup A/S Self-cleaning coating composition
US20130020620A1 (en) * 2008-09-04 2013-01-24 Zena Technologies, Inc. Optical waveguides in image sensors
US20140291793A1 (en) * 2013-03-27 2014-10-02 Sony Corporation Solid-state imaging apparatus, solid-state imaging apparatus manufacturing method, and electronic apparatus
US20170115436A1 (en) * 2015-10-22 2017-04-27 Omnivision Technologies, Inc. Multi-layer color filter for low color error and high snr

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457134A (en) * 1987-08-27 1989-03-03 Minolta Camera Kk Spectrum measuring sensor
US6665012B1 (en) * 1998-09-22 2003-12-16 Pixim, Inc. Process-scalable high spatial resolution and low bit resolution CMOS area image sensor
KR20040060509A (ko) * 2002-12-30 2004-07-06 동부전자 주식회사 Ｃｍｏｓ 이미지 센서
US7521666B2 (en) 2005-02-17 2009-04-21 Capella Microsystems Inc. Multi-cavity Fabry-Perot ambient light filter apparatus
JP4984706B2 (ja) * 2006-07-19 2012-07-25 株式会社デンソー マイクロ構造体の製造方法
US7626241B1 (en) * 2007-04-23 2009-12-01 Texas Advanced Optoelectronic Solutions, Inc. Thin film interference ripple reduction
JP5023808B2 (ja) * 2007-05-24 2012-09-12 ソニー株式会社 固体撮像装置およびカメラ
JP2010232509A (ja) * 2009-03-27 2010-10-14 Oki Semiconductor Co Ltd 光半導体および光半導体の製造方法
US9357956B2 (en) * 2010-03-05 2016-06-07 Seiko Epson Corporation Spectroscopic sensor and electronic apparatus
JP2011199050A (ja) * 2010-03-19 2011-10-06 Sony Corp 固体撮像デバイスおよび電子機器
JP2012156310A (ja) * 2011-01-26 2012-08-16 Sony Corp 固体撮像素子、固体撮像素子の製造方法、および電子機器
KR20120110377A (ko) * 2011-03-29 2012-10-10 삼성전자주식회사 이미지 센서
JP5803419B2 (ja) * 2011-08-19 2015-11-04 セイコーエプソン株式会社 傾斜構造体、傾斜構造体の製造方法、及び分光センサー
JP6253870B2 (ja) * 2011-10-04 2017-12-27 浜松ホトニクス株式会社 分光センサ
JP2013088557A (ja) * 2011-10-17 2013-05-13 Toshiba Corp 固体撮像装置、及び固体撮像装置の製造方法
JP5988690B2 (ja) * 2012-05-18 2016-09-07 浜松ホトニクス株式会社 分光センサ
US9349769B2 (en) * 2012-08-22 2016-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor comprising reflective guide layer and method of forming the same
KR102286109B1 (ko) * 2014-08-05 2021-08-04 삼성전자주식회사 이미지 픽셀, 이를 포함하는 이미지 센서, 및 이를 포함하는 이미지 처리 시스템
KR102356695B1 (ko) * 2014-08-18 2022-01-26 삼성전자주식회사 광 유도 부재를 가지는 이미지 센서
KR102263042B1 (ko) * 2014-10-16 2021-06-09 삼성전자주식회사 픽셀, 상기 픽셀을 포함하는 이미지 센서, 및 상기 픽셀을 포함하는 이미지 처리 시스템
TWI675907B (zh) * 2015-01-21 2019-11-01 日商Ｊｓｒ股份有限公司 固體攝像裝置
TW201641659A (zh) * 2015-05-08 2016-12-01 Jsr股份有限公司 光感測器裝置及含有光感測器裝置的電子機器、紅外線吸收性組成物、以及紅外線截止濾光片層的形成方法
EP3112828B1 (en) * 2015-06-30 2022-10-05 IMEC vzw Integrated circuit and method for manufacturing integrated circuit
US9609239B2 (en) * 2015-08-20 2017-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Infrared image sensor
EP3182079B1 (en) * 2015-12-14 2023-08-23 ams AG Optical sensing device and method for manufacturing an optical sensing device
JP2017175102A (ja) 2016-03-16 2017-09-28 ソニー株式会社 光電変換素子及びその製造方法並びに撮像装置
US10770505B2 (en) * 2017-04-05 2020-09-08 Intel Corporation Per-pixel performance improvement for combined visible and ultraviolet image sensor arrays
CN107195650B (zh) * 2017-06-13 2024-05-03 江苏城讯成联网络科技有限公司 多光谱摄像装置
CN107331677A (zh) * 2017-07-19 2017-11-07 北京思比科微电子技术股份有限公司 一种多光谱成像的图像传感器
US10770489B2 (en) * 2018-03-30 2020-09-08 Vishay Intertechnology, Inc. Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and N-well regions

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040113051A1 (en) * 2002-11-20 2004-06-17 Jun-Young Kim Silicon optoelectronic device and image input/output device using the silicon optoelectronic device
US20090159785A1 (en) * 2005-07-06 2009-06-25 Koon-Wing Tsang Optical sensing device
US20130020620A1 (en) * 2008-09-04 2013-01-24 Zena Technologies, Inc. Optical waveguides in image sensors
US20120118318A1 (en) * 2008-12-16 2012-05-17 Dyrup A/S Self-cleaning coating composition
US20140291793A1 (en) * 2013-03-27 2014-10-02 Sony Corporation Solid-state imaging apparatus, solid-state imaging apparatus manufacturing method, and electronic apparatus
US20170115436A1 (en) * 2015-10-22 2017-04-27 Omnivision Technologies, Inc. Multi-layer color filter for low color error and high snr

Also Published As

Publication number Publication date
US20190305016A1 (en) 2019-10-03
JP2021519511A (ja) 2021-08-10
TWI809074B (zh) 2023-07-21
US10770489B2 (en) 2020-09-08
US20200403013A1 (en) 2020-12-24
JP7610982B2 (ja) 2025-01-09
CN112088434B (zh) 2024-05-28
TW201943115A (zh) 2019-11-01
WO2019191543A1 (en) 2019-10-03
US11862648B2 (en) 2024-01-02
EP3759742A1 (en) 2021-01-06
KR20200140320A (ko) 2020-12-15
EP3759742A4 (en) 2022-03-30
EP3759742B1 (en) 2024-03-13
KR102747259B1 (ko) 2024-12-26
CN112088434A (zh) 2020-12-15
IL277562A (en) 2020-11-30
IL277562B1 (en) 2025-08-01

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