JP7584620B2 - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

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Publication number
JP7584620B2
JP7584620B2 JP2023503858A JP2023503858A JP7584620B2 JP 7584620 B2 JP7584620 B2 JP 7584620B2 JP 2023503858 A JP2023503858 A JP 2023503858A JP 2023503858 A JP2023503858 A JP 2023503858A JP 7584620 B2 JP7584620 B2 JP 7584620B2
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Japan
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electrode
electroless
joining
bonding
plating layer
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JP2023503858A
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Japanese (ja)
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JPWO2022186192A5 (https=
JPWO2022186192A1 (https=
Inventor
雅司 小田原
昌利 砂本
隆二 上野
祥太郎 中村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/021—Manufacture or treatment of two-electrode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting

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  • Electrodes Of Semiconductors (AREA)
JP2023503858A 2021-03-02 2022-03-01 半導体素子の製造方法 Active JP7584620B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021032617 2021-03-02
JP2021032617 2021-03-02
PCT/JP2022/008577 WO2022186192A1 (ja) 2021-03-02 2022-03-01 半導体素子、電力変換装置および半導体素子の製造方法

Publications (3)

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JPWO2022186192A1 JPWO2022186192A1 (https=) 2022-09-09
JPWO2022186192A5 JPWO2022186192A5 (https=) 2023-09-27
JP7584620B2 true JP7584620B2 (ja) 2024-11-15

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JP2023503858A Active JP7584620B2 (ja) 2021-03-02 2022-03-01 半導体素子の製造方法

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JP (1) JP7584620B2 (https=)
CN (1) CN116888708A (https=)
WO (1) WO2022186192A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7708018B2 (ja) * 2022-07-01 2025-07-15 株式会社デンソー 半導体装置
JP2024134749A (ja) * 2023-03-22 2024-10-04 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
WO2025004877A1 (ja) * 2023-06-27 2025-01-02 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177096A (ja) 1999-12-14 2001-06-29 Fuji Electric Co Ltd 縦型半導体装置の製造方法および縦型半導体装置
JP2010251719A (ja) 2009-03-23 2010-11-04 Fuji Electric Systems Co Ltd 半導体装置の製造方法
JP2011219828A (ja) 2010-04-12 2011-11-04 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2017059636A (ja) 2015-09-15 2017-03-23 三菱電機株式会社 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177096A (ja) 1999-12-14 2001-06-29 Fuji Electric Co Ltd 縦型半導体装置の製造方法および縦型半導体装置
JP2010251719A (ja) 2009-03-23 2010-11-04 Fuji Electric Systems Co Ltd 半導体装置の製造方法
JP2011219828A (ja) 2010-04-12 2011-11-04 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2017059636A (ja) 2015-09-15 2017-03-23 三菱電機株式会社 半導体装置の製造方法

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WO2022186192A1 (ja) 2022-09-09
CN116888708A (zh) 2023-10-13
JPWO2022186192A1 (https=) 2022-09-09

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