CN116888708A - 半导体元件、电力转换装置以及半导体元件的制造方法 - Google Patents

半导体元件、电力转换装置以及半导体元件的制造方法 Download PDF

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Publication number
CN116888708A
CN116888708A CN202280016917.3A CN202280016917A CN116888708A CN 116888708 A CN116888708 A CN 116888708A CN 202280016917 A CN202280016917 A CN 202280016917A CN 116888708 A CN116888708 A CN 116888708A
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CN
China
Prior art keywords
electrode
semiconductor element
bonding
bonding electrode
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280016917.3A
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English (en)
Chinese (zh)
Inventor
小田原雅司
砂本昌利
上野隆二
中村祥太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN116888708A publication Critical patent/CN116888708A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/021—Manufacture or treatment of two-electrode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting

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  • Electrodes Of Semiconductors (AREA)
CN202280016917.3A 2021-03-02 2022-03-01 半导体元件、电力转换装置以及半导体元件的制造方法 Pending CN116888708A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021032617 2021-03-02
JP2021-032617 2021-03-02
PCT/JP2022/008577 WO2022186192A1 (ja) 2021-03-02 2022-03-01 半導体素子、電力変換装置および半導体素子の製造方法

Publications (1)

Publication Number Publication Date
CN116888708A true CN116888708A (zh) 2023-10-13

Family

ID=83154753

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280016917.3A Pending CN116888708A (zh) 2021-03-02 2022-03-01 半导体元件、电力转换装置以及半导体元件的制造方法

Country Status (3)

Country Link
JP (1) JP7584620B2 (https=)
CN (1) CN116888708A (https=)
WO (1) WO2022186192A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7708018B2 (ja) * 2022-07-01 2025-07-15 株式会社デンソー 半導体装置
JP2024134749A (ja) * 2023-03-22 2024-10-04 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
WO2025004877A1 (ja) * 2023-06-27 2025-01-02 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4465760B2 (ja) * 1999-12-14 2010-05-19 富士電機システムズ株式会社 縦型半導体装置の製造方法
JP5707709B2 (ja) * 2009-03-23 2015-04-30 富士電機株式会社 半導体装置の製造方法
JP5649322B2 (ja) * 2010-04-12 2015-01-07 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2017059636A (ja) * 2015-09-15 2017-03-23 三菱電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2022186192A1 (ja) 2022-09-09
JP7584620B2 (ja) 2024-11-15
JPWO2022186192A1 (https=) 2022-09-09

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