JPWO2022186192A1 - - Google Patents
Info
- Publication number
- JPWO2022186192A1 JPWO2022186192A1 JP2023503858A JP2023503858A JPWO2022186192A1 JP WO2022186192 A1 JPWO2022186192 A1 JP WO2022186192A1 JP 2023503858 A JP2023503858 A JP 2023503858A JP 2023503858 A JP2023503858 A JP 2023503858A JP WO2022186192 A1 JPWO2022186192 A1 JP WO2022186192A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/021—Manufacture or treatment of two-electrode devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021032617 | 2021-03-02 | ||
| JP2021032617 | 2021-03-02 | ||
| PCT/JP2022/008577 WO2022186192A1 (ja) | 2021-03-02 | 2022-03-01 | 半導体素子、電力変換装置および半導体素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022186192A1 true JPWO2022186192A1 (https=) | 2022-09-09 |
| JPWO2022186192A5 JPWO2022186192A5 (https=) | 2023-09-27 |
| JP7584620B2 JP7584620B2 (ja) | 2024-11-15 |
Family
ID=83154753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023503858A Active JP7584620B2 (ja) | 2021-03-02 | 2022-03-01 | 半導体素子の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7584620B2 (https=) |
| CN (1) | CN116888708A (https=) |
| WO (1) | WO2022186192A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7708018B2 (ja) * | 2022-07-01 | 2025-07-15 | 株式会社デンソー | 半導体装置 |
| JP2024134749A (ja) * | 2023-03-22 | 2024-10-04 | 三菱電機株式会社 | 半導体装置、電力変換装置および半導体装置の製造方法 |
| WO2025004877A1 (ja) * | 2023-06-27 | 2025-01-02 | 三菱電機株式会社 | 半導体装置、電力変換装置および半導体装置の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001177096A (ja) * | 1999-12-14 | 2001-06-29 | Fuji Electric Co Ltd | 縦型半導体装置の製造方法および縦型半導体装置 |
| JP2010251719A (ja) * | 2009-03-23 | 2010-11-04 | Fuji Electric Systems Co Ltd | 半導体装置の製造方法 |
| JP2011219828A (ja) * | 2010-04-12 | 2011-11-04 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
| JP2017059636A (ja) * | 2015-09-15 | 2017-03-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
-
2022
- 2022-03-01 WO PCT/JP2022/008577 patent/WO2022186192A1/ja not_active Ceased
- 2022-03-01 JP JP2023503858A patent/JP7584620B2/ja active Active
- 2022-03-01 CN CN202280016917.3A patent/CN116888708A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001177096A (ja) * | 1999-12-14 | 2001-06-29 | Fuji Electric Co Ltd | 縦型半導体装置の製造方法および縦型半導体装置 |
| JP2010251719A (ja) * | 2009-03-23 | 2010-11-04 | Fuji Electric Systems Co Ltd | 半導体装置の製造方法 |
| JP2011219828A (ja) * | 2010-04-12 | 2011-11-04 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
| JP2017059636A (ja) * | 2015-09-15 | 2017-03-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022186192A1 (ja) | 2022-09-09 |
| CN116888708A (zh) | 2023-10-13 |
| JP7584620B2 (ja) | 2024-11-15 |
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