JP7548243B2 - レーザ素子、レーザ素子の製造方法、レーザ装置およびレーザ増幅素子 - Google Patents

レーザ素子、レーザ素子の製造方法、レーザ装置およびレーザ増幅素子 Download PDF

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JP7548243B2
JP7548243B2 JP2021561363A JP2021561363A JP7548243B2 JP 7548243 B2 JP7548243 B2 JP 7548243B2 JP 2021561363 A JP2021561363 A JP 2021561363A JP 2021561363 A JP2021561363 A JP 2021561363A JP 7548243 B2 JP7548243 B2 JP 7548243B2
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laser
wavelength
reflective layer
layer
laser medium
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将尚 鎌田
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Sony Corp
Sony Group Corp
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
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    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
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    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
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  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Semiconductor Lasers (AREA)
JP2021561363A 2019-11-28 2020-11-19 レーザ素子、レーザ素子の製造方法、レーザ装置およびレーザ増幅素子 Active JP7548243B2 (ja)

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JP2019215087 2019-11-28
JP2019215087 2019-11-28
PCT/JP2020/043292 WO2021106757A1 (ja) 2019-11-28 2020-11-19 レーザ素子、レーザ素子の製造方法、レーザ装置およびレーザ増幅素子

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JPWO2021106757A1 JPWO2021106757A1 (https=) 2021-06-03
JPWO2021106757A5 JPWO2021106757A5 (https=) 2022-07-26
JP7548243B2 true JP7548243B2 (ja) 2024-09-10

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US (1) US20220344892A1 (https=)
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US11482828B2 (en) * 2019-06-28 2022-10-25 Thomas James Kane Passively Q-switched laser and laser system for ranging applications
DE112022006961T5 (de) 2022-03-30 2025-01-09 Sony Group Corporation Laserelement und elektronische vorrichtung
CN119604780A (zh) * 2022-07-26 2025-03-11 索尼集团公司 光学装置和距离测量装置
WO2024048325A1 (ja) * 2022-08-31 2024-03-07 ソニーグループ株式会社 光源装置、測距装置、及び測距方法
WO2024150795A1 (ja) * 2023-01-12 2024-07-18 ソニーグループ株式会社 レーザ素子及び電子機器
JP2025027777A (ja) * 2023-08-17 2025-02-28 ソニーセミコンダクタソリューションズ株式会社 面発光素子及び面発光素子の製造方法
WO2025115470A1 (ja) * 2023-11-27 2025-06-05 ソニーグループ株式会社 レーザ素子およびレーザ装置
WO2025192044A1 (ja) * 2024-03-15 2025-09-18 ソニーグループ株式会社 レーザ素子及び電子機器
WO2025197414A1 (ja) * 2024-03-18 2025-09-25 ソニーグループ株式会社 レーザ素子、スイッチ素子、及び測距システム

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