JP7529155B2 - 電子部品 - Google Patents

電子部品 Download PDF

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Publication number
JP7529155B2
JP7529155B2 JP2023525681A JP2023525681A JP7529155B2 JP 7529155 B2 JP7529155 B2 JP 7529155B2 JP 2023525681 A JP2023525681 A JP 2023525681A JP 2023525681 A JP2023525681 A JP 2023525681A JP 7529155 B2 JP7529155 B2 JP 7529155B2
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JP
Japan
Prior art keywords
semiconductor substrate
electrode
layer
electronic component
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023525681A
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English (en)
Japanese (ja)
Other versions
JPWO2022255036A1 (https=
JPWO2022255036A5 (https=
Inventor
俊幸 中磯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of JPWO2022255036A1 publication Critical patent/JPWO2022255036A1/ja
Publication of JPWO2022255036A5 publication Critical patent/JPWO2022255036A5/ja
Application granted granted Critical
Publication of JP7529155B2 publication Critical patent/JP7529155B2/ja
Active legal-status Critical Current
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/005Electrodes
    • H01G4/012Form of non-self-supporting electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/20Inductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F17/0013Printed inductances with stacked layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041Printed circuit coils
    • H01F41/042Printed circuit coils by thin film techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
    • H01G4/306Stacked capacitors made by thin film techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/66Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F17/0013Printed inductances with stacked layers
    • H01F2017/002Details of via holes for interconnecting the layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F2017/0053Printed inductances with means to reduce eddy currents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F2017/0086Printed inductances on semiconductor substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • H01G4/252Terminals the terminals being coated on the capacitive element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2023525681A 2021-05-31 2022-05-10 電子部品 Active JP7529155B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021090991 2021-05-31
JP2021090991 2021-05-31
PCT/JP2022/019748 WO2022255036A1 (ja) 2021-05-31 2022-05-10 電子部品

Publications (3)

Publication Number Publication Date
JPWO2022255036A1 JPWO2022255036A1 (https=) 2022-12-08
JPWO2022255036A5 JPWO2022255036A5 (https=) 2024-02-29
JP7529155B2 true JP7529155B2 (ja) 2024-08-06

Family

ID=84324213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023525681A Active JP7529155B2 (ja) 2021-05-31 2022-05-10 電子部品

Country Status (4)

Country Link
US (1) US20240087809A1 (https=)
JP (1) JP7529155B2 (https=)
CN (1) CN117378021A (https=)
WO (1) WO2022255036A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305246A (ja) 2001-04-05 2002-10-18 Sharp Corp インダクタンス素子並びに半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009076483A (ja) * 2007-09-18 2009-04-09 Fuji Electric Device Technology Co Ltd マイクロトランスの製造方法
JPWO2010052839A1 (ja) * 2008-11-06 2012-03-29 パナソニック株式会社 半導体装置
JP6461603B2 (ja) * 2012-11-02 2019-01-30 ローム株式会社 チップコンデンサ、回路アセンブリ、および電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305246A (ja) 2001-04-05 2002-10-18 Sharp Corp インダクタンス素子並びに半導体装置

Also Published As

Publication number Publication date
JPWO2022255036A1 (https=) 2022-12-08
US20240087809A1 (en) 2024-03-14
CN117378021A (zh) 2024-01-09
WO2022255036A1 (ja) 2022-12-08

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