JP7527342B2 - プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム - Google Patents

プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム Download PDF

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JP7527342B2
JP7527342B2 JP2022207737A JP2022207737A JP7527342B2 JP 7527342 B2 JP7527342 B2 JP 7527342B2 JP 2022207737 A JP2022207737 A JP 2022207737A JP 2022207737 A JP2022207737 A JP 2022207737A JP 7527342 B2 JP7527342 B2 JP 7527342B2
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heater
plasma
temperature
state
plasma processing
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JP2023033331A (ja
JP2023033331A5 (https=
Inventor
大輔 林
義弘 梅澤
信介 岡
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1917—Control of temperature characterised by the use of electric means using digital means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/18—Status alarms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32944—Arc detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H05B2203/005—Heaters using a particular layout for the resistive material or resistive elements using multiple resistive elements or resistive zones isolated from each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Emergency Management (AREA)
  • Business, Economics & Management (AREA)
  • Remote Sensing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2022207737A 2018-06-29 2022-12-26 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム Active JP7527342B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018124896 2018-06-29
JP2018124896 2018-06-29
JP2019032013 2019-02-25
JP2019032013 2019-02-25
JP2019099609A JP7202972B2 (ja) 2018-06-29 2019-05-28 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム

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JP2019099609A Division JP7202972B2 (ja) 2018-06-29 2019-05-28 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム

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JP2023033331A JP2023033331A (ja) 2023-03-10
JP2023033331A5 JP2023033331A5 (https=) 2023-03-17
JP7527342B2 true JP7527342B2 (ja) 2024-08-02

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US (1) US20240186125A1 (https=)
JP (1) JP7527342B2 (https=)
KR (1) KR20240122911A (https=)
CN (1) CN117238742A (https=)
TW (2) TWI882440B (https=)
WO (1) WO2020004091A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7507620B2 (ja) * 2020-07-02 2024-06-28 東京エレクトロン株式会社 プラズマ処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247526A (ja) 2003-02-14 2004-09-02 Hitachi High-Technologies Corp プラズマ処理装置及び方法
JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法
JP2010171288A (ja) 2009-01-26 2010-08-05 Tokyo Electron Ltd プラズマ処理装置
JP2010199107A (ja) 2009-02-23 2010-09-09 Mitsubishi Heavy Ind Ltd プラズマ処理装置の基板支持台
JP2017005128A (ja) 2015-06-11 2017-01-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置

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JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP2003197609A (ja) * 2001-12-27 2003-07-11 Tokyo Electron Ltd プラズマ処理装置の監視方法及びプラズマ処理装置
JP5183058B2 (ja) * 2006-07-20 2013-04-17 アプライド マテリアルズ インコーポレイテッド 急速温度勾配コントロールによる基板処理
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100978886B1 (ko) * 2007-02-13 2010-08-31 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리방법 및 플라즈마처리장치
JP2009087790A (ja) 2007-09-29 2009-04-23 Tokyo Electron Ltd 電子密度測定装置及び電子密度測定方法並びに記憶媒体
JP2009194032A (ja) 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマ測定方法及びプラズマ測定装置並びに記憶媒体
JP6066728B2 (ja) * 2009-12-15 2017-01-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ｃｄの均一性を向上させるための基板温度調整を行う方法及びプラズマエッチングシステム
US8847159B2 (en) 2011-03-28 2014-09-30 Tokyo Electron Limited Ion energy analyzer
US9263240B2 (en) * 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
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JP6030994B2 (ja) * 2013-05-15 2016-11-24 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP6180924B2 (ja) * 2013-12-26 2017-08-16 東京エレクトロン株式会社 熱流束測定方法、基板処理システム及び熱流束測定用部材
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JP2015092580A (ja) * 2014-11-28 2015-05-14 株式会社日立ハイテクノロジーズ 試料の温度を制御する温度制御装置、試料を載置する試料台及びこれらを備えたプラズマ処理装置
JP6361495B2 (ja) * 2014-12-22 2018-07-25 東京エレクトロン株式会社 熱処理装置
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
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JP7068971B2 (ja) * 2017-11-16 2022-05-17 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム
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Publication number Priority date Publication date Assignee Title
JP2004247526A (ja) 2003-02-14 2004-09-02 Hitachi High-Technologies Corp プラズマ処理装置及び方法
JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法
JP2010171288A (ja) 2009-01-26 2010-08-05 Tokyo Electron Ltd プラズマ処理装置
JP2010199107A (ja) 2009-02-23 2010-09-09 Mitsubishi Heavy Ind Ltd プラズマ処理装置の基板支持台
JP2017005128A (ja) 2015-06-11 2017-01-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置

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Publication number Publication date
JP2023033331A (ja) 2023-03-10
WO2020004091A1 (ja) 2020-01-02
KR20240122911A (ko) 2024-08-13
US20240186125A1 (en) 2024-06-06
TW202015094A (zh) 2020-04-16
TWI819012B (zh) 2023-10-21
TW202418346A (zh) 2024-05-01
TWI882440B (zh) 2025-05-01
CN117238742A (zh) 2023-12-15

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