TWI882440B - 電漿處理裝置、電漿狀態檢測方法及電漿狀態檢測程式 - Google Patents

電漿處理裝置、電漿狀態檢測方法及電漿狀態檢測程式 Download PDF

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Publication number
TWI882440B
TWI882440B TW112135383A TW112135383A TWI882440B TW I882440 B TWI882440 B TW I882440B TW 112135383 A TW112135383 A TW 112135383A TW 112135383 A TW112135383 A TW 112135383A TW I882440 B TWI882440 B TW I882440B
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Taiwan
Prior art keywords
heater
plasma
temperature
state
ignited
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TW112135383A
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English (en)
Chinese (zh)
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TW202418346A (zh
Inventor
林大輔
梅澤義弘
岡信介
Original Assignee
日商東京威力科創股份有限公司
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Priority claimed from JP2019099609A external-priority patent/JP7202972B2/ja
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Publication of TW202418346A publication Critical patent/TW202418346A/zh
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1917—Control of temperature characterised by the use of electric means using digital means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/18—Status alarms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32944—Arc detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H05B2203/005—Heaters using a particular layout for the resistive material or resistive elements using multiple resistive elements or resistive zones isolated from each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Emergency Management (AREA)
  • Business, Economics & Management (AREA)
  • Remote Sensing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW112135383A 2018-06-29 2019-06-27 電漿處理裝置、電漿狀態檢測方法及電漿狀態檢測程式 TWI882440B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2018124896 2018-06-29
JP2018-124896 2018-06-29
JP2019032013 2019-02-25
JP2019-032013 2019-02-25
JP2019099609A JP7202972B2 (ja) 2018-06-29 2019-05-28 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
JP2019-099609 2019-05-28

Publications (2)

Publication Number Publication Date
TW202418346A TW202418346A (zh) 2024-05-01
TWI882440B true TWI882440B (zh) 2025-05-01

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TW112135383A TWI882440B (zh) 2018-06-29 2019-06-27 電漿處理裝置、電漿狀態檢測方法及電漿狀態檢測程式
TW108122530A TWI819012B (zh) 2018-06-29 2019-06-27 電漿處理裝置、電漿狀態檢測方法及電漿狀態檢測程式

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Country Status (6)

Country Link
US (1) US20240186125A1 (https=)
JP (1) JP7527342B2 (https=)
KR (1) KR20240122911A (https=)
CN (1) CN117238742A (https=)
TW (2) TWI882440B (https=)
WO (1) WO2020004091A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7507620B2 (ja) * 2020-07-02 2024-06-28 東京エレクトロン株式会社 プラズマ処理装置

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TW201438097A (zh) * 2012-11-30 2014-10-01 蘭姆研究公司 用於具有熱控制元件陣列之靜電夾頭的電力切換系統
JP2015092580A (ja) * 2014-11-28 2015-05-14 株式会社日立ハイテクノロジーズ 試料の温度を制御する温度制御装置、試料を載置する試料台及びこれらを備えたプラズマ処理装置
TW201540136A (zh) * 2013-12-26 2015-10-16 Tokyo Electron Ltd 熱通量測定方法、基板處理系統及熱通量測定用構件
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JP2004247526A (ja) * 2003-02-14 2004-09-02 Hitachi High-Technologies Corp プラズマ処理装置及び方法
JP5183058B2 (ja) * 2006-07-20 2013-04-17 アプライド マテリアルズ インコーポレイテッド 急速温度勾配コントロールによる基板処理
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
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JP2009194032A (ja) 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマ測定方法及びプラズマ測定装置並びに記憶媒体
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US20150348763A1 (en) * 2007-02-13 2015-12-03 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
TW201438097A (zh) * 2012-11-30 2014-10-01 蘭姆研究公司 用於具有熱控制元件陣列之靜電夾頭的電力切換系統
TW201540136A (zh) * 2013-12-26 2015-10-16 Tokyo Electron Ltd 熱通量測定方法、基板處理系統及熱通量測定用構件
JP2015092580A (ja) * 2014-11-28 2015-05-14 株式会社日立ハイテクノロジーズ 試料の温度を制御する温度制御装置、試料を載置する試料台及びこれらを備えたプラズマ処理装置
JP2017005128A (ja) * 2015-06-11 2017-01-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置

Also Published As

Publication number Publication date
JP2023033331A (ja) 2023-03-10
WO2020004091A1 (ja) 2020-01-02
KR20240122911A (ko) 2024-08-13
US20240186125A1 (en) 2024-06-06
JP7527342B2 (ja) 2024-08-02
TW202015094A (zh) 2020-04-16
TWI819012B (zh) 2023-10-21
TW202418346A (zh) 2024-05-01
CN117238742A (zh) 2023-12-15

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