KR20240122911A - 플라스마 처리 장치, 플라스마 상태 검출 방법 및 플라스마 상태 검출 프로그램 - Google Patents

플라스마 처리 장치, 플라스마 상태 검출 방법 및 플라스마 상태 검출 프로그램 Download PDF

Info

Publication number
KR20240122911A
KR20240122911A KR1020247025479A KR20247025479A KR20240122911A KR 20240122911 A KR20240122911 A KR 20240122911A KR 1020247025479 A KR1020247025479 A KR 1020247025479A KR 20247025479 A KR20247025479 A KR 20247025479A KR 20240122911 A KR20240122911 A KR 20240122911A
Authority
KR
South Korea
Prior art keywords
heater
plasma
temperature
state
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247025479A
Other languages
English (en)
Korean (ko)
Inventor
다이스케 하야시
요시히로 우메자와
신스케 오카
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2019099609A external-priority patent/JP7202972B2/ja
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240122911A publication Critical patent/KR20240122911A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1917—Control of temperature characterised by the use of electric means using digital means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING SYSTEMS, e.g. PERSONAL CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/18—Status alarms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32944—Arc detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H05B2203/005—Heaters using a particular layout for the resistive material or resistive elements using multiple resistive elements or resistive zones isolated from each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Emergency Management (AREA)
  • Business, Economics & Management (AREA)
  • Remote Sensing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020247025479A 2018-06-29 2019-06-17 플라스마 처리 장치, 플라스마 상태 검출 방법 및 플라스마 상태 검출 프로그램 Pending KR20240122911A (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2018124896 2018-06-29
JPJP-P-2018-124896 2018-06-29
JPJP-P-2019-032013 2019-02-25
JP2019032013 2019-02-25
JP2019099609A JP7202972B2 (ja) 2018-06-29 2019-05-28 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
JPJP-P-2019-099609 2019-05-28
PCT/JP2019/023793 WO2020004091A1 (ja) 2018-06-29 2019-06-17 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
KR1020207025491A KR102690560B1 (ko) 2018-06-29 2019-06-17 플라스마 처리 장치, 플라스마 상태 검출 방법 및 플라스마 상태 검출 프로그램

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020207025491A Division KR102690560B1 (ko) 2018-06-29 2019-06-17 플라스마 처리 장치, 플라스마 상태 검출 방법 및 플라스마 상태 검출 프로그램

Publications (1)

Publication Number Publication Date
KR20240122911A true KR20240122911A (ko) 2024-08-13

Family

ID=68985637

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247025479A Pending KR20240122911A (ko) 2018-06-29 2019-06-17 플라스마 처리 장치, 플라스마 상태 검출 방법 및 플라스마 상태 검출 프로그램

Country Status (6)

Country Link
US (1) US20240186125A1 (https=)
JP (1) JP7527342B2 (https=)
KR (1) KR20240122911A (https=)
CN (1) CN117238742A (https=)
TW (2) TWI882440B (https=)
WO (1) WO2020004091A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7507620B2 (ja) * 2020-07-02 2024-06-28 東京エレクトロン株式会社 プラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009087790A (ja) 2007-09-29 2009-04-23 Tokyo Electron Ltd 電子密度測定装置及び電子密度測定方法並びに記憶媒体
JP2009194032A (ja) 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマ測定方法及びプラズマ測定装置並びに記憶媒体
JP2014513390A (ja) 2011-03-28 2014-05-29 東京エレクトロン株式会社 イオンエネルギーアナライザ、当該イオンエネルギーアナライザ内での電気信号処理方法、並びに、当該イオンエネルギーアナライザの製造及び操作方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP2003197609A (ja) * 2001-12-27 2003-07-11 Tokyo Electron Ltd プラズマ処理装置の監視方法及びプラズマ処理装置
JP2004247526A (ja) * 2003-02-14 2004-09-02 Hitachi High-Technologies Corp プラズマ処理装置及び方法
JP5183058B2 (ja) * 2006-07-20 2013-04-17 アプライド マテリアルズ インコーポレイテッド 急速温度勾配コントロールによる基板処理
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100978886B1 (ko) * 2007-02-13 2010-08-31 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리방법 및 플라즈마처리장치
JP5433171B2 (ja) * 2008-06-16 2014-03-05 株式会社日立ハイテクノロジーズ 試料温度の制御方法
JP5059792B2 (ja) * 2009-01-26 2012-10-31 東京エレクトロン株式会社 プラズマ処理装置
JP5237151B2 (ja) * 2009-02-23 2013-07-17 三菱重工業株式会社 プラズマ処理装置の基板支持台
JP6066728B2 (ja) * 2009-12-15 2017-01-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ｃｄの均一性を向上させるための基板温度調整を行う方法及びプラズマエッチングシステム
US9263240B2 (en) * 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10049948B2 (en) * 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
JP6030994B2 (ja) * 2013-05-15 2016-11-24 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP6180924B2 (ja) * 2013-12-26 2017-08-16 東京エレクトロン株式会社 熱流束測定方法、基板処理システム及び熱流束測定用部材
US10141166B2 (en) * 2014-08-15 2018-11-27 Applied Materials, Inc. Method of real time in-situ chamber condition monitoring using sensors and RF communication
JP2015092580A (ja) * 2014-11-28 2015-05-14 株式会社日立ハイテクノロジーズ 試料の温度を制御する温度制御装置、試料を載置する試料台及びこれらを備えたプラズマ処理装置
JP6361495B2 (ja) * 2014-12-22 2018-07-25 東京エレクトロン株式会社 熱処理装置
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
US10522377B2 (en) * 2016-07-01 2019-12-31 Lam Research Corporation System and method for substrate support feed-forward temperature control based on RF power
JP7068971B2 (ja) * 2017-11-16 2022-05-17 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム
US11236422B2 (en) * 2017-11-17 2022-02-01 Lam Research Corporation Multi zone substrate support for ALD film property correction and tunability

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009087790A (ja) 2007-09-29 2009-04-23 Tokyo Electron Ltd 電子密度測定装置及び電子密度測定方法並びに記憶媒体
JP2009194032A (ja) 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマ測定方法及びプラズマ測定装置並びに記憶媒体
JP2014513390A (ja) 2011-03-28 2014-05-29 東京エレクトロン株式会社 イオンエネルギーアナライザ、当該イオンエネルギーアナライザ内での電気信号処理方法、並びに、当該イオンエネルギーアナライザの製造及び操作方法

Also Published As

Publication number Publication date
JP2023033331A (ja) 2023-03-10
WO2020004091A1 (ja) 2020-01-02
US20240186125A1 (en) 2024-06-06
JP7527342B2 (ja) 2024-08-02
TW202015094A (zh) 2020-04-16
TWI819012B (zh) 2023-10-21
TW202418346A (zh) 2024-05-01
TWI882440B (zh) 2025-05-01
CN117238742A (zh) 2023-12-15

Similar Documents

Publication Publication Date Title
US12063717B2 (en) Plasma processing apparatus, and temperature control method
KR102759935B1 (ko) 플라즈마 처리 장치, 온도 제어 방법 및 온도 제어 프로그램
TW201933472A (zh) 電漿處理裝置、溫度控制方法及溫度控制程式
KR102690560B1 (ko) 플라스마 처리 장치, 플라스마 상태 검출 방법 및 플라스마 상태 검출 프로그램
CN111009454B (zh) 等离子体处理装置、监视方法以及记录介质
JP2023099617A (ja) プラズマ処理装置、監視方法および監視プログラム
CN111933509B (zh) 等离子体处理装置、计算方法以及记录介质
JP7527342B2 (ja) プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000