JP7523741B2 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置 Download PDF

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JP7523741B2
JP7523741B2 JP2021535358A JP2021535358A JP7523741B2 JP 7523741 B2 JP7523741 B2 JP 7523741B2 JP 2021535358 A JP2021535358 A JP 2021535358A JP 2021535358 A JP2021535358 A JP 2021535358A JP 7523741 B2 JP7523741 B2 JP 7523741B2
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light
insulating film
layer
semiconductor layer
light emitting
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肇 秋元
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies

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JP2021535358A 2019-07-30 2020-07-28 画像表示装置の製造方法および画像表示装置 Active JP7523741B2 (ja)

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JP2019139858 2019-07-30
JP2019139858 2019-07-30
PCT/JP2020/028891 WO2021020393A1 (ja) 2019-07-30 2020-07-28 画像表示装置の製造方法および画像表示装置

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JPWO2021020393A5 JPWO2021020393A5 (https=) 2023-07-06
JP7523741B2 true JP7523741B2 (ja) 2024-07-29

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US (2) US12211883B2 (https=)
JP (1) JP7523741B2 (https=)
CN (1) CN114144881B (https=)
TW (1) TWI890686B (https=)
WO (1) WO2021020393A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4303941A4 (en) * 2021-03-05 2024-09-11 Sony Semiconductor Solutions Corporation LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE LIGHT-EMITTING DEVICE
JP7820654B2 (ja) * 2021-03-30 2026-02-26 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN116897383A (zh) * 2021-03-30 2023-10-17 日亚化学工业株式会社 图像显示装置的制造方法和图像显示装置
CN115000098B (zh) * 2022-07-29 2023-01-17 惠科股份有限公司 显示面板及制备方法
CN115425047B (zh) * 2022-08-26 2025-09-23 湖北长江新型显示产业创新中心有限公司 一种显示面板和显示装置
WO2024193798A1 (en) * 2023-03-17 2024-09-26 Ams-Osram International Gmbh METHOD FOR PROCESSING AN ARRANGEMENT HAVING µLEDS AND ARRANGEMENT

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242645A (ja) 2006-03-03 2007-09-20 Rohm Co Ltd 窒化物半導体発光素子及びその製造方法
JP2008134594A (ja) 2006-11-27 2008-06-12 Lg Phillips Lcd Co Ltd フレキシブル表示装置及びその製造方法
JP2014160736A (ja) 2013-02-19 2014-09-04 Toshiba Corp 半導体発光装置及び発光装置
JP2018026442A (ja) 2016-08-09 2018-02-15 旭化成株式会社 発光素子パッケージおよび発光素子パッケージの製造方法
WO2018132070A1 (en) 2017-01-13 2018-07-19 Massachusetts Institute Of Technology A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display
WO2018175338A1 (en) 2017-03-20 2018-09-27 Hong Kong Beida Jade Bird Display Limited Making semiconductor devices by stacking strata of micro leds
JP2018205456A (ja) 2017-06-01 2018-12-27 株式会社ブイ・テクノロジー フルカラーｌｅｄ表示パネル
US20190019928A1 (en) 2017-07-11 2019-01-17 PlayNitride Inc. Micro light-emitting device and display apparatus
TW201913329A (zh) 2017-09-12 2019-04-01 日商凸版印刷股份有限公司 顯示裝置及顯示裝置基板
CN109887950A (zh) 2019-04-19 2019-06-14 京东方科技集团股份有限公司 显示基板、led器件、显示面板、显示装置及制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141492A (ja) 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
JP3681992B2 (ja) 2001-06-13 2005-08-10 日本電信電話株式会社 半導体集積回路の製造方法
TWI479660B (zh) * 2006-08-31 2015-04-01 半導體能源研究所股份有限公司 薄膜電晶體，其製造方法，及半導體裝置
JP2008147608A (ja) 2006-10-27 2008-06-26 Canon Inc Ｌｅｄアレイの製造方法とｌｅｄアレイ、及びｌｅｄプリンタ
JP4827698B2 (ja) 2006-10-27 2011-11-30 キヤノン株式会社 発光素子の形成方法
CN101515621B (zh) * 2009-02-19 2011-03-30 旭丽电子(广州)有限公司 发光二极管芯片、制法及封装方法
US8933433B2 (en) * 2012-07-30 2015-01-13 LuxVue Technology Corporation Method and structure for receiving a micro device
JP2016139560A (ja) 2015-01-28 2016-08-04 株式会社ジャパンディスプレイ 表示装置
WO2017094461A1 (ja) * 2015-12-01 2017-06-08 シャープ株式会社 画像形成素子
KR102591388B1 (ko) * 2016-01-18 2023-10-19 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
EP3913680B1 (fr) * 2016-05-13 2025-07-23 Commissariat à l'Energie Atomique et aux Energies Alternatives Procédé de fabrication d'un dispositif optoélectronique comportant une pluralité de diodes au nitrure de gallium
US10121710B2 (en) * 2016-06-14 2018-11-06 Innolux Corporation Methods for manufacturing a display device
KR102772357B1 (ko) 2016-12-20 2025-02-21 엘지디스플레이 주식회사 발광 다이오드 칩 및 이를 포함하는 발광 다이오드 디스플레이 장치
KR102454083B1 (ko) 2017-08-30 2022-10-12 엘지디스플레이 주식회사 마이크로-led 표시장치 및 그 제조방법
WO2019049360A1 (ja) 2017-09-11 2019-03-14 凸版印刷株式会社 表示装置及び表示装置基板

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242645A (ja) 2006-03-03 2007-09-20 Rohm Co Ltd 窒化物半導体発光素子及びその製造方法
JP2008134594A (ja) 2006-11-27 2008-06-12 Lg Phillips Lcd Co Ltd フレキシブル表示装置及びその製造方法
JP2014160736A (ja) 2013-02-19 2014-09-04 Toshiba Corp 半導体発光装置及び発光装置
JP2018026442A (ja) 2016-08-09 2018-02-15 旭化成株式会社 発光素子パッケージおよび発光素子パッケージの製造方法
WO2018132070A1 (en) 2017-01-13 2018-07-19 Massachusetts Institute Of Technology A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display
WO2018175338A1 (en) 2017-03-20 2018-09-27 Hong Kong Beida Jade Bird Display Limited Making semiconductor devices by stacking strata of micro leds
JP2018205456A (ja) 2017-06-01 2018-12-27 株式会社ブイ・テクノロジー フルカラーｌｅｄ表示パネル
US20190019928A1 (en) 2017-07-11 2019-01-17 PlayNitride Inc. Micro light-emitting device and display apparatus
TW201913329A (zh) 2017-09-12 2019-04-01 日商凸版印刷股份有限公司 顯示裝置及顯示裝置基板
CN109887950A (zh) 2019-04-19 2019-06-14 京东方科技集团股份有限公司 显示基板、led器件、显示面板、显示装置及制作方法

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TWI890686B (zh) 2025-07-21
WO2021020393A1 (ja) 2021-02-04
JPWO2021020393A1 (https=) 2021-02-04
TW202111983A (zh) 2021-03-16
US20220149113A1 (en) 2022-05-12
US12211883B2 (en) 2025-01-28
CN114144881B (zh) 2026-01-27
US20250120235A1 (en) 2025-04-10
CN114144881A (zh) 2022-03-04

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