JP7489605B2 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置 Download PDF

Info

Publication number
JP7489605B2
JP7489605B2 JP2021551314A JP2021551314A JP7489605B2 JP 7489605 B2 JP7489605 B2 JP 7489605B2 JP 2021551314 A JP2021551314 A JP 2021551314A JP 2021551314 A JP2021551314 A JP 2021551314A JP 7489605 B2 JP7489605 B2 JP 7489605B2
Authority
JP
Japan
Prior art keywords
light
layer
insulating film
image display
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021551314A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021065918A1 (https=
JPWO2021065918A5 (https=
Inventor
肇 秋元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of JPWO2021065918A1 publication Critical patent/JPWO2021065918A1/ja
Publication of JPWO2021065918A5 publication Critical patent/JPWO2021065918A5/ja
Application granted granted Critical
Publication of JP7489605B2 publication Critical patent/JP7489605B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/39—Connection of the pixel electrodes to the driving transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H10H29/8322—Electrodes characterised by their materials
    • H10H29/8323—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/851—Wavelength conversion means
    • H10H29/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/8517—Colour filters

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2021551314A 2019-10-01 2020-09-29 画像表示装置の製造方法および画像表示装置 Active JP7489605B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019181636 2019-10-01
JP2019181636 2019-10-01
PCT/JP2020/036935 WO2021065918A1 (ja) 2019-10-01 2020-09-29 画像表示装置の製造方法および画像表示装置

Publications (3)

Publication Number Publication Date
JPWO2021065918A1 JPWO2021065918A1 (https=) 2021-04-08
JPWO2021065918A5 JPWO2021065918A5 (https=) 2023-09-11
JP7489605B2 true JP7489605B2 (ja) 2024-05-24

Family

ID=75336960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021551314A Active JP7489605B2 (ja) 2019-10-01 2020-09-29 画像表示装置の製造方法および画像表示装置

Country Status (6)

Country Link
US (1) US12543419B2 (https=)
EP (1) EP4040511B1 (https=)
JP (1) JP7489605B2 (https=)
CN (1) CN114342092B (https=)
TW (1) TWI843898B (https=)
WO (1) WO2021065918A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112331150A (zh) * 2020-11-05 2021-02-05 Tcl华星光电技术有限公司 显示装置及发光面板
WO2022113949A1 (ja) * 2020-11-25 2022-06-02 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
TWI818428B (zh) * 2022-01-27 2023-10-11 友達光電股份有限公司 通訊裝置及其通訊元件與此通訊元件的製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094144A (ja) 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
JP2018101785A (ja) 2016-12-20 2018-06-28 エルジー ディスプレイ カンパニー リミテッド 発光ダイオードチップ及びこれを含む発光ダイオードディスプレイ装置
US20190165035A1 (en) 2018-09-20 2019-05-30 Shanghai Tianma Micro-Electronics Co.,Ltd. Display panel and method for manufacturing display panel

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5618474A (en) * 1992-06-19 1997-04-08 Massachusetts Institute Of Technology Method of forming curved surfaces by etching and thermal processing
US7906229B2 (en) * 2007-03-08 2011-03-15 Amit Goyal Semiconductor-based, large-area, flexible, electronic devices
KR100422333B1 (ko) * 2000-07-31 2004-03-10 이노스텍 (주) 단결정 거대 입자로 구성된 금속 박막 제조 방법 및 그 금속 박막
JP2002141492A (ja) 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
CN100380673C (zh) * 2001-11-09 2008-04-09 株式会社半导体能源研究所 发光设备及其制造方法
US6759689B2 (en) * 2002-08-07 2004-07-06 Shin-Etsu Handotai Co., Ltd. Light emitting element and method for manufacturing the same
US7601994B2 (en) * 2003-11-14 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
KR20090115222A (ko) * 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP2008147608A (ja) 2006-10-27 2008-06-26 Canon Inc Ｌｅｄアレイの製造方法とｌｅｄアレイ、及びｌｅｄプリンタ
TWI323047B (en) * 2006-11-28 2010-04-01 Univ Nat Taiwan The method for forming electronic devices by using protection layers
WO2008091837A2 (en) * 2007-01-22 2008-07-31 Cree Led Lighting Solutions, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
KR20110134685A (ko) * 2010-06-09 2011-12-15 삼성모바일디스플레이주식회사 표시 장치 및 그 제조 방법
US8647919B2 (en) * 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
KR101640293B1 (ko) * 2010-10-07 2016-07-15 샤프 가부시키가이샤 반도체 장치, 표시 장치, 및 반도체 장치 및 표시 장치의 제조 방법
JP5961358B2 (ja) * 2011-03-14 2016-08-02 昭和電工株式会社 発光ダイオード及びその製造方法
JP5766481B2 (ja) * 2011-03-29 2015-08-19 株式会社Ｊｏｌｅｄ 表示装置および電子機器
JP5460831B1 (ja) * 2012-11-22 2014-04-02 株式会社東芝 半導体発光素子
JP2016139560A (ja) 2015-01-28 2016-08-04 株式会社ジャパンディスプレイ 表示装置
CN104916527B (zh) * 2015-05-15 2018-03-02 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置
KR102661474B1 (ko) * 2016-04-11 2024-04-29 삼성디스플레이 주식회사 디스플레이 장치
EP3913680B1 (fr) 2016-05-13 2025-07-23 Commissariat à l'Energie Atomique et aux Energies Alternatives Procédé de fabrication d'un dispositif optoélectronique comportant une pluralité de diodes au nitrure de gallium
KR102651097B1 (ko) * 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
TW201917811A (zh) * 2017-06-26 2019-05-01 美商特索羅科學有限公司 發光二極體質量傳遞設備及製造方法
KR102454083B1 (ko) 2017-08-30 2022-10-12 엘지디스플레이 주식회사 마이크로-led 표시장치 및 그 제조방법
WO2019049360A1 (ja) 2017-09-11 2019-03-14 凸版印刷株式会社 表示装置及び表示装置基板
KR102527303B1 (ko) * 2017-10-31 2023-04-27 엘지디스플레이 주식회사 발광 표시 장치
US10748879B2 (en) 2018-02-28 2020-08-18 Sharp Kabushiki Kaisha Image display device and display
JP7249787B2 (ja) 2018-02-28 2023-03-31 シャープ株式会社 表示素子及び表示装置
JP7248441B2 (ja) 2018-03-02 2023-03-29 シャープ株式会社 画像表示素子
CN108987425B (zh) * 2018-07-19 2020-09-18 豪威半导体（上海）有限责任公司 微led显示器及其制造方法
CN110034150B (zh) * 2019-03-25 2020-11-27 厦门天马微电子有限公司 显示面板及其制作方法、显示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094144A (ja) 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
JP2018101785A (ja) 2016-12-20 2018-06-28 エルジー ディスプレイ カンパニー リミテッド 発光ダイオードチップ及びこれを含む発光ダイオードディスプレイ装置
US20190165035A1 (en) 2018-09-20 2019-05-30 Shanghai Tianma Micro-Electronics Co.,Ltd. Display panel and method for manufacturing display panel

Also Published As

Publication number Publication date
WO2021065918A1 (ja) 2021-04-08
CN114342092B (zh) 2024-12-24
US20220223776A1 (en) 2022-07-14
TWI843898B (zh) 2024-06-01
US12543419B2 (en) 2026-02-03
EP4040511A1 (en) 2022-08-10
CN114342092A (zh) 2022-04-12
JPWO2021065918A1 (https=) 2021-04-08
EP4040511A4 (en) 2023-11-08
TW202127406A (zh) 2021-07-16
EP4040511B1 (en) 2025-10-08

Similar Documents

Publication Publication Date Title
JP7523741B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7585602B2 (ja) 画像表示装置の製造方法および画像表示装置
JP2024088732A (ja) 画像表示装置の製造方法
JP7489605B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7820654B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7428919B2 (ja) 画像表示装置の製造方法および画像表示装置
TWI898085B (zh) 圖像顯示裝置之製造方法及圖像顯示裝置
US20250311499A1 (en) Image display device manufacturing method and image display device
JP7624587B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7647012B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7755791B2 (ja) 画像表示装置の製造方法および画像表示装置
JP2024099072A (ja) 画像表示装置の製造方法および画像表示装置
JP7796318B2 (ja) 画像表示装置の製造方法および画像表示装置
TWI903058B (zh) 圖像顯示裝置之製造方法及圖像顯示裝置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230901

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230901

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240412

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240425

R150 Certificate of patent or registration of utility model

Ref document number: 7489605

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150