WO2021065918A1 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置 Download PDF

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Publication number
WO2021065918A1
WO2021065918A1 PCT/JP2020/036935 JP2020036935W WO2021065918A1 WO 2021065918 A1 WO2021065918 A1 WO 2021065918A1 JP 2020036935 W JP2020036935 W JP 2020036935W WO 2021065918 A1 WO2021065918 A1 WO 2021065918A1
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Prior art keywords
light emitting
layer
insulating film
image display
display device
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English (en)
French (fr)
Japanese (ja)
Inventor
秋元　肇
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Nichia Corp
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Nichia Corp
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Priority to JP2021551314A priority Critical patent/JP7489605B2/ja
Priority to EP20871886.6A priority patent/EP4040511B1/en
Priority to CN202080061426.1A priority patent/CN114342092B/zh
Publication of WO2021065918A1 publication Critical patent/WO2021065918A1/ja
Priority to US17/709,006 priority patent/US12543419B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/39—Connection of the pixel electrodes to the driving transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H10H29/8322—Electrodes characterised by their materials
    • H10H29/8323—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/851—Wavelength conversion means
    • H10H29/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/8517—Colour filters

Definitions

  • An embodiment of the present invention relates to a method for manufacturing an image display device and an image display device.
  • the appearance of a display device using a micro LED which is a fine light emitting element, is expected.
  • a method of manufacturing a display device using micro LEDs a method of sequentially transferring individually formed micro LEDs to a drive circuit has been introduced.
  • the number of micro LED elements increases as the image quality becomes higher, such as full high-definition, 4K, 8K, etc.
  • the transfer process requires a huge amount of time. Further, a poor connection between the micro LED and the drive circuit or the like may occur, resulting in a decrease in yield.
  • a technique is known in which a semiconductor layer including a light emitting layer is grown on a Si substrate, electrodes are formed on the semiconductor layer, and then the electrodes are attached to a circuit board on which a drive circuit is formed (for example, Patent Document 1).
  • One embodiment of the present invention provides a method for manufacturing an image display device that shortens the transfer process of a light emitting element and improves the yield.
  • a first substrate including a circuit including a circuit element formed on a translucent substrate and a first insulating film covering the circuit is prepared.
  • the image display device includes a translucent substrate having a first surface, a circuit element provided on the first surface, and electricity provided on the circuit element.
  • a first wiring layer that is specifically connected, a first insulating film that covers the circuit element and the first wiring layer on the first surface, and a portion of a single crystal metal provided on the first insulating film.
  • a second light emitting element that covers the conductive layer including the conductive layer, a first light emitting element provided on the portion and electrically connected to the portion, at least a part of the first light emitting element, the first insulating film, and the conductive layer.
  • a via that penetrates the insulating film and the second insulating film and electrically connects the first wiring layer and the second wiring layer is provided.
  • the image display device includes a substrate having a first surface and flexibility, a circuit element provided on the first surface, and the circuit element provided on the circuit element.
  • a first wiring layer electrically connected to the circuit element, a first insulating film covering the circuit element and the first wiring layer on the first surface, and a single crystal provided on the first insulating film.
  • a conductive layer including a metal portion, a first light emitting element provided on the portion and electrically connected to the portion, at least a part of the first light emitting element, the first insulating film, and the conductive layer.
  • the image display device includes a translucent substrate having a first surface, a plurality of transistors provided on the first surface, and the plurality of transistors provided on the plurality of transistors.
  • a single crystal provided on the first insulating film, a first wiring layer electrically connected to the semiconductor, a first insulating film covering the plurality of transistors and the first wiring layer on the first surface, and a single crystal.
  • a conductive layer including a metal portion, a first conductive type first semiconductor layer provided on the portion and electrically connected to the portion, and a light emitting layer provided on the first semiconductor layer.
  • the second semiconductor layer of the second conductive type which is provided on the light emitting layer and is different from the first conductive type, and the conductive layer, the first insulating film, the light emitting layer and the first semiconductor layer are covered and said.
  • a second insulating film covering at least a part of the second semiconductor layer and a plurality of light emitting surfaces of the second semiconductor layer exposed from the second insulating film according to the plurality of conductors are arranged.
  • the second wiring layer connected to the translucent electrode penetrates the first insulating film and the second insulating film, and the wiring of the first wiring layer and the wiring of the second wiring layer are electrically connected, respectively. It is equipped with multiple vias.
  • a method for manufacturing an image display device that shortens the transfer process of the light emitting element and improves the yield is realized.
  • FIG. 1 is a schematic cross-sectional view illustrating a part of the image display device according to the embodiment.
  • FIG. 1 schematically shows the configuration of subpixel 20-1 of the image display device of the present embodiment.
  • the pixels constituting the image displayed on the image display device are composed of a plurality of sub-pixels 20 shown in FIG. 3 which will be described later.
  • FIG. 1 in addition to subpixel 20-1, a part of subpixel 20-2 is also shown.
  • FIG. 1 represents a cross-sectional view taken along the line AA'of FIG. 4, which will be described later, and is a cross-sectional view in which cross-sections in a plurality of planes perpendicular to the XY plane are connected to one. Also in other figures, as shown in FIG.
  • the X-axis and the Y-axis are not shown, and the Z-axis perpendicular to the XY plane is shown. That is, in these figures, the plane perpendicular to the Z axis is the XY plane.
  • Subpixels 20-1 and 20-2 have light emitting surfaces 153S1 and 153S2 substantially parallel to the XY plane, respectively.
  • the light emitting surfaces 153S1 and 153S2 mainly emit light in the positive direction of the Z axis orthogonal to the XY plane.
  • the subpixel 20-1 of the image display device of the present embodiment includes a substrate 102, a transistor (circuit element) 103, a first wiring layer (first wiring layer) 110, and a first.
  • the image display device includes subpixels 20-2.
  • subpixel 20-2 is arranged adjacent to subpixel 20-1.
  • Subpixel 20-2 includes a substrate 102, a first wiring layer 110, a first interlayer insulating film 112, a second interlayer insulating film 156, a conductive layer 130, and a second wiring layer 160. Are included, and these are shared with subpixel 20-1.
  • the light emitting element (second light emitting element) 150-2 is provided on the conductive layer 130 together with the light emitting element 150-1.
  • the transistor for the subpixel 20-2 is not displayed, but a transistor for driving the light emitting element 150-2 is separately provided.
  • the substrate 102 on which the circuit element including the transistor 103 is formed is a translucent substrate, for example, a glass substrate.
  • the substrate 102 has a first surface 102a, and a thin film transistor (TFT) is formed as a transistor 103 on the first surface 102a.
  • the first surface 102a is a surface substantially parallel to the XY plane.
  • the light emitting elements 150-1 and 150-2 are driven by a TFT formed on a glass substrate.
  • the process of forming a circuit element including a TFT on a large glass substrate has been established for manufacturing liquid crystal panels, organic EL panels, and the like, and has an advantage that existing plants can be used.
  • the subpixel 20 further includes a color filter 180.
  • the color filter (wavelength conversion member) 180 is provided on the surface resin layer 170 via a transparent thin film adhesive layer 188.
  • the surface resin layer 170 is provided on the interlayer insulating film 156 and the wiring layer 160.
  • the transistor 103 is formed on the TFT underlayer film 106 formed on the first surface 102a of the substrate 102.
  • the TFT underlayer film 106 is provided for the purpose of ensuring flatness when the transistor 103 is formed and protecting the TFT channel 104 of the transistor 103 from contamination or the like during heat treatment.
  • the TFT underlayer film 106 is, for example, SiO 2 .
  • the substrate 102 is formed with a transistor for driving the light emitting element 150-2, another transistor, a circuit element such as a capacitor, which is not shown in FIG.
  • the circuit 101 is configured by wiring or the like.
  • the transistor 103 corresponds to the drive transistor 26 shown in FIG. 3, which will be described later.
  • the circuit 101 includes a TFT channel 104, an insulating layer 105, an insulating film 108, vias 111s and 111d, and a wiring layer 110.
  • the circuit board 100 may include other components such as the substrate 102, the TFT underlayer film 106, the circuit 101, and the interlayer insulating film 112.
  • Transistor 103 is a p-channel TFT in this example.
  • the transistor 103 includes a TFT channel 104 and a gate 107.
  • the TFT is preferably formed by a Low Temperature Poly Silicon (LTPS) process.
  • the TFT channel 104 is a region of polycrystalline Si formed on the substrate 102, and is polycrystalline and activated by annealing the region formed as amorphous Si by laser irradiation.
  • the TFT formed by the LTPS process has sufficiently high mobility.
  • the TFT channel 104 includes regions 104s, 104i, 104d.
  • the regions 104s, 104i, and 104d are all provided on the TFT underlayer film 106.
  • the area 104i is provided between the areas 104s and 104d.
  • the regions 104s and 104d are doped with p-type impurities such as boron (B) and are ohmic-connected to the vias 111s and 111d.
  • the gate 107 is provided on the TFT channel 104 via the insulating layer 105.
  • the insulating layer 105 is provided to insulate the TFT channel 104 and the gate 107 and to insulate them from other adjacent circuit elements.
  • a potential lower than the region 104s is applied to the gate 107, a channel is formed in the region 104i, so that the current flowing between the regions 104s and 104d can be controlled.
  • the insulating layer 105 is, for example, SiO 2 .
  • the insulating layer 105 may be a multi-layered insulating layer containing SiO 2 or Si 3 N 4 depending on the covering region.
  • the gate 107 is, for example, polycrystalline Si.
  • the polycrystalline Si film of the gate 107 can generally be formed by a CVD process.
  • the gate 107 and the insulating layer 105 are covered with the insulating film 108.
  • the insulating film 108 is, for example, SiO 2 or Si 3 N 4 or the like.
  • the insulating film 108 functions as a flattening film for forming the wiring layer 110.
  • the insulating film 108 is a multilayer insulating film containing , for example, SiO 2 and Si 3 N 4 and the like.
  • the vias 111s and 111d are provided so as to penetrate the insulating film 108.
  • a first wiring layer (first wiring layer) 110 is formed on the insulating film 108.
  • the first wiring layer 110 includes a plurality of wirings having different potentials, and includes wirings 110s and 110d.
  • the code of the wiring layer shall be displayed at a position next to one wiring included in the wiring layer to be labeled.
  • the via 111s is provided between the wiring 110s and the area 104s, and electrically connects them.
  • the via 111d is provided between the wiring 110d and the area 104d, and electrically connects them.
  • the wiring 110s electrically connects the region 104s, which is the source region of the transistor 103, to the power supply line 3 shown in FIG. 3, which will be described later.
  • the wiring 110d is electrically connected to the p-type semiconductor layer 153-1 on the light emitting surface 153S1 side of the light emitting element 150-1 via the via 161d and the wiring 160a-1.
  • the wiring layer 110 and the vias 111s and 111d are formed of, for example, an alloy of Al or Al, a laminated film of Al and Ti, or the like.
  • Al is laminated on a thin film of Ti, and Ti is further laminated on Al.
  • the interlayer insulating film 112 is provided on the insulating film 108 and the wiring layer 110.
  • the interlayer insulating film (first insulating film) 112 is an organic insulating film such as PSG (Phosphorus Silicon Glass) or BPSG (Boron Phosphorus Silicon Glass).
  • the interlayer insulating film 112 insulates between the circuit elements of the circuit 101 formed on the circuit board 100, and provides a flat surface for forming the conductive layer 130.
  • the interlayer insulating film 112 also functions as a protective film that protects the surface of the circuit board 100.
  • the conductive layer 130 is provided on the interlayer insulating film 112.
  • the conductive layer 130 includes a light reflecting plate 130a.
  • one light reflection plate 130a is provided for every two subpixels.
  • the different light reflecting plates 130a may or may not be connected to each other in the conductive layer 130.
  • the different light reflecting plates 130a are connected to, for example, the ground wire 4 of FIG. 3, which will be described later, via vias 161k and wirings 160k provided for each light reflecting plate 130a.
  • At least a part of the conductive layer 130 is made of a single crystal metal.
  • the entire conductive layer 130 is a single crystal metal layer.
  • At least a part of the light reflecting plate 130a is made of a single crystal metal.
  • the portion of the light reflecting plate 130a where the light emitting elements 150-1 and 150-2 are provided is formed of a single crystal metal, for example, forming a single crystal metal layer.
  • the entire conductive layer 130 and the light reflection plate (part) 130a are formed of a single crystal metal layer.
  • the metal material forming the conductive layer 130 and the light reflecting plate 130a is, for example, Cu, Hf, or the like.
  • the metal material used for the conductive layer 130 is not limited to Cu and Hf as long as it is a metal material that can be single-crystallized by a low-temperature annealing treatment consistent with the LTPS process.
  • the light reflection plate 130a is made of a metal material or the like, it can be electrically connected to the light emitting elements 150-1 and 150-2 with low resistance. Since the light emitting elements 150-1 and 150-2 are provided on the same light reflecting plate 130a, the light emitting elements 150-1 and 150-2 can be electrically connected to each other with low resistance.
  • the outer circumference of the light reflecting plate 130a includes the entire outer circumference of the light emitting elements 150-1 and 150-2 when the light emitting elements 150-1 and 150-2 are projected onto the light reflecting plate 130a in XY plan view.
  • the light reflecting plate 130a reflects the scattering of light downward from the light emitting element 150-1 toward the light emitting surface 153S1, it is possible to prevent the light from reaching the transistor 103. Since the light reflecting plate 130a also reflects the scattering of light downward of the light emitting element 150-2 toward the light emitting surface 153S2 side, it is possible to prevent the light from reaching the transistor driving the light emitting element 150-2. The light reflecting plate 130a shields the light scattered downward from the light emitting elements 150-1 and 150-2, thereby suppressing the arrival of light at the circuit element including the transistor 103 and preventing the circuit element from malfunctioning. You can also.
  • the light emitting element 150-1 includes an n-type semiconductor layer (first semiconductor layer) 151-1, a light emitting layer 152-1, and a p-type semiconductor layer (second semiconductor layer) 153-1.
  • the n-type semiconductor layer 151-1, the light emitting layer 152-1 and the p-type semiconductor layer 153-1 are laminated in this order from the side of the interlayer insulating film 112 toward the side of the light emitting surface 153S1.
  • the light emitting element 150-2 includes an n-type semiconductor layer (third semiconductor layer) 151-2, a light emitting layer 152-2, and a p-type semiconductor layer (fourth semiconductor layer) 153-2.
  • the n-type semiconductor layer 151-2, the light emitting layer 152-2, and the p-type semiconductor layer 153-2 are laminated in this order from the side of the interlayer insulating film 112 toward the side of the light emitting surface 153S2.
  • the area of the light emitting element in the XY plane view is set according to the light emitting color of the red, green, and blue subpixels.
  • the area of the light emitting elements 150-1 and 150-2 in the XY plane view is appropriately set by the visual sensitivity, the conversion efficiency of the color conversion unit 182 of the color filter 180, and the like.
  • the areas of the two light emitting elements 150-1 and 150-2 in the XY plane view are different. Since the light emitting elements 150-1 and 150-2 are placed on the light reflecting plate 130a having a surface substantially parallel to the XY plane, the area in the XY plane view is the light emitting element 150 projected on the XY plane. -1, 150-2 is the area of the area surrounded by the outer circumference.
  • the area in the XY plane view is simply referred to as an area.
  • the area of the light emitting element 150-1 is smaller than the area of the light emitting element 150-2.
  • the light emitting elements 150-1 and 150-2 have, for example, a substantially square or rectangular shape in XY plan view, but the corners may be rounded.
  • the light emitting element 150 may have, for example, an elliptical shape or a circular shape in an XY plan view.
  • the light emitting elements 150-1 and 150-2 include, for example, a gallium nitride based compound semiconductor including a light emitting layer such as In X Al Y Ga 1-XY N (0 ⁇ X, 0 ⁇ Y, X + Y ⁇ 1). It is preferably used.
  • the above-mentioned gallium nitride based compound semiconductor may be simply referred to as gallium nitride (GaN).
  • the light emitting elements 150-1 and 150-2 in one embodiment of the present invention are so-called light emitting diodes, and the wavelength of the light emitted by the light emitting elements 150-1 and 150-2 is, for example, about 467 nm ⁇ 20 nm.
  • the wavelength of the light emitted by the light emitting elements 150-1 and 150-2 may be bluish purple emission of about 410 nm ⁇ 20 nm.
  • the wavelength of the light emitted by the light emitting elements 150-1 and 150-2 is not limited to the above-mentioned values, and may be appropriate.
  • the second interlayer insulating film 156 covers the first interlayer insulating film 112, the conductive layer 130, and the light emitting elements 150-1 and 150-2.
  • the interlayer insulating film 156 is formed of an organic insulating material or the like.
  • the interlayer insulating film 156 protects the light emitting elements 150-1, 150-2, the conductive layer 130, and the like from the surrounding environment such as dust and humidity.
  • the interlayer insulating film 156 has a function of insulating the light emitting element 150, the conductive layer 130, and the like from other conductive materials by covering them.
  • the surface of the interlayer insulating film 156 may be flat enough to form the wiring layer 160 on the interlayer insulating film 156.
  • the organic insulating material used for the interlayer insulating film 156 is preferably a white resin.
  • the interlayer insulating film 156 which is a white resin, reflects the laterally emitted light of the light emitting elements 150-1 and 150-2 and the return light caused by the interface of the color filter 180, and substantially the light emitting element 150-1. , 150-2 can improve the luminous efficiency.
  • the white resin is formed by dispersing scatterable fine particles having a Mie scattering effect in a silicon-based resin such as SOG (Spin On Glass) or a transparent resin such as a novolak-type phenol-based resin.
  • the fine particles are colorless or white, and have a diameter of about 1/10 to several times the wavelength of the light emitted by the light emitting elements 150-1 and 150-2.
  • Fine particles having a diameter of about 1 ⁇ 2 of the wavelength of light are preferably used as the scattering fine particles.
  • examples of such scattering fine particles include TiO 2 , Al 2 SO 3 , and ZnO.
  • the white resin can also be formed by utilizing a large number of fine pores dispersed in the transparent resin.
  • a SiO 2 film formed by ALD (Atomic-layer-deposition) or CVD may be used instead of SOG or the like to whiten the film.
  • the second interlayer insulating film 156 may be a black resin.
  • the interlayer insulating film 156 as a black resin, scattering of light in the subpixels 20-1 and 20-1 is suppressed, and stray light is suppressed more effectively.
  • An image display device in which stray light is suppressed can display a sharper image.
  • the via 161k is provided so as to penetrate the second interlayer insulating film 156. One end of the via 161k is connected to the light reflecting plate 130a.
  • the via 161d is provided so as to penetrate the first interlayer insulating film 112 and the second interlayer insulating film 156. One end of the via 161d is connected to the wiring 110d.
  • the wiring layer 160 is provided on the interlayer insulating film 156.
  • the wiring layer 160 includes wirings 160a-1, 160k.
  • the wiring 160a-1 is connected to the other end of the via 161d.
  • the translucent electrode 159a1 is provided over the wiring 160a-1.
  • the translucent electrode 159a1 is provided over the light emitting surface 153S1 of the light emitting element 150-1.
  • the translucent electrode 159a1 is provided between the wiring 160a-1 and the light emitting surface 153S1, and electrically connects the wiring 160a-1 and the p-type semiconductor layer 153-1. Therefore, the p-type semiconductor layer 153-1 which is the anode electrode of the light emitting element 150-1 is connected to the channel which is the drain electrode of the transistor 103 via the translucent electrode 159a1, the wiring 160a-1, the via 161d and the wiring 110d. It is electrically connected to the region 104d.
  • the translucent electrode 159a2 is provided over the light emitting surface 153S2 of the light emitting element 150-2. Similar to the case of the light emitting element 150-1, the light emitting surface 153S2 passes the light emitting element 150-2 via the translucent electrode 159a2, the wiring included in the wiring layer 160, and the via penetrating the interlayer insulating films 112 and 156. It is electrically connected to the driving transistor.
  • the wiring 160k is connected to the other end of the via 161k.
  • the translucent electrode 159k is provided over the wiring 160k.
  • the wiring 160k and the translucent electrode 159k are connected to the ground wire 4 shown in FIG. 3 which will be described later. Therefore, the n-type semiconductor layers 151-1, 151-2 are connected to the ground wire 4 via the light reflection plate 130a, the via 161k, the wiring 160k, and the translucent electrode 159k.
  • the region 104s of the TFT channel 104 which is the source electrode of the transistor 103, is electrically connected to the power supply line 3 shown in FIG. 3 via the wiring 110s.
  • the surface resin layer 170 covers the second interlayer insulating film 156, the second wiring layer 160, and the translucent electrodes 159a1,159a2,159k.
  • the surface resin layer 170 is a transparent resin, protects the interlayer insulating film 156 wiring layer 160 and the translucent electrodes 159a1,159a2,159k, and provides a flat surface for adhering the color filter 180.
  • the color filter 180 includes a light-shielding unit 181 and a color conversion unit 182.
  • the color conversion unit 182 is provided directly above the light emitting surfaces 153S and 153S2 of the light emitting elements 150-1 and 150-2 according to the shape of the light emitting surfaces 153S1 and 153S2.
  • the portion other than the color conversion unit 182 is a light-shielding unit 181.
  • the light-shielding unit 181 is a so-called black matrix, which reduces bleeding due to color mixing of light emitted from the adjacent color conversion unit 182 and makes it possible to display a sharp image.
  • the color conversion unit 182 has one layer or two layers.
  • FIG. 1 shows a two-layer portion. Whether it is one layer or two layers is determined by the color of the light emitted by the subpixels 20-1 and 20-2, that is, the wavelength.
  • the color conversion unit 182 preferably has two layers, a color conversion layer 183 and a filter layer 184, which will be described later.
  • the emission color of the subpixels 20-1 and 20-2 is blue, it is preferably one layer.
  • the first layer closer to the light emitting element 150 is the color conversion layer 183
  • the second layer is the filter layer 184. That is, the filter layer 184 is laminated on the color conversion layer 183.
  • the color conversion layer 183 is a layer that converts the wavelength of the light emitted by the light emitting elements 150-1 and 150-2 into a desired wavelength. For example, when the subpixel emits red light, the color conversion layer 183 converts light having a wavelength of 467 nm ⁇ 20 nm, which is the wavelength of the light emitting element 150-1, into light having a wavelength of, for example, about 630 nm ⁇ 20 nm. When the subpixel emits green light, the color conversion layer 183 converts the light having a wavelength of 467 nm ⁇ 20 nm of the light emitting element into light having a wavelength of, for example, about 532 nm ⁇ 20 nm.
  • the filter layer 184 blocks the wavelength component of blue light emission that remains without color conversion in the color conversion layer 183.
  • the light emitting element of the subpixel may output the light through the color conversion layer 183 or output the light as it is without passing through the color conversion layer 183. You may do so.
  • the wavelength of the light emitted by the light emitting element is about 467 nm ⁇ 20 nm
  • the light emitting element of the subpixel may output the light without passing through the color conversion layer 183.
  • the wavelength of the light emitted by the light emitting element is 410 nm ⁇ 20 nm, it is preferable to provide one color conversion layer 183 in order to convert the wavelength of the output light to about 467 nm ⁇ 20 nm.
  • the subpixel may have a filter layer 184.
  • the filter layer 184 By providing the filter layer 184 on the blue subpixel, minute external light reflection generated on the surface of the light emitting element of the subpixel is suppressed.
  • FIG. 2A and 2B are schematic cross-sectional views illustrating a part of a modified example of the image display device of the present embodiment, respectively.
  • FIG. 2A shows one of the two light emitting elements 150-1 and 150-2 provided on the light reflecting plate 130a shown in FIG. 1, one of the light emitting elements 150-1.
  • the configurations of the two light emitting elements 150-1 and 150-2 are the same, and the matters relating to the configuration including the light emitting elements 150-1 will be described below with respect to this modification.
  • FIG. 2B the configurations of the light emitting element 150a-1 and the light emitting element 150a-2 shown in FIG. 9A described later are the same, and matters relating to the configuration of the light emitting element 150a-1 will be described.
  • the display of the surface resin layer 170 and the color filter 180 is omitted in order to avoid complication.
  • a surface resin layer 170, a color filter 180, and the like are provided on the second interlayer insulating film 156, 256 and the second wiring layer 160. The same applies to the other embodiments described later and the modified examples thereof.
  • the connection method between the light emitting element 150-1 and the wiring 160a1-1 is different from the case of the above-described first embodiment.
  • the same components are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.
  • the subpixel 20a-1 includes wiring 160a1-1.
  • the wiring 160a1-1 is different from the wiring 160a-1 in the case of the first embodiment described above.
  • the wiring 160a1-1 extends to the light emitting surface 153S1 of the light emitting element 150-1, and is electrically connected to the surface of the p-type semiconductor layer 153-1 including the light emitting surface 153S1 at one end of the wiring 160a1-1. ..
  • the surface including the light emitting surface 153S1 and the light emitting surface 153S1 is a surface on the same plane.
  • the light emitting surface 153S1 is preferably roughened as in the case of the above-described embodiment.
  • the light emitting element 150-1 can improve the light extraction efficiency.
  • the light emitting element 150a-1 is different from the case of the first embodiment in that the light emitting element 150a-1 includes the p-type semiconductor layer 153a-1 which is not roughened.
  • the connection method between the light emitting element 150a-1 and the wiring 160a2-1 is different from that in the first embodiment.
  • the second interlayer insulating film (second insulating film) 256 is a translucent resin, preferably a transparent resin.
  • a silicon-based resin such as SOG, a novolak-type phenol-based resin, or the like is used.
  • the light emitting element 150a-1 emits light from the light emitting surface 153S1 via the transparent interlayer insulating film 256.
  • the light emitting surface 153S1 is connected to the wiring 160a2-1 of the second wiring layer 160 via a contact hole.
  • the light emitting element 150a-1 emits light from the light emitting surface 153S1 via the interlayer insulating film 256, so that the step of forming an opening in the interlayer insulating film 256 and the light emitting surface 153S1 are roughened.
  • the step of surface rendering can be omitted.
  • any of the configurations of the subpixels 20-1, 20a-1, and 20b-1 shown above can be included.
  • FIG. 3 is a schematic block diagram illustrating an image display device according to the present embodiment.
  • the image display device 1 of the present embodiment includes a display area 2.
  • Subpixels 20 are arranged in the display area 2.
  • the subpixels 20 are arranged in a grid pattern, for example. For example, n subpixels 20 are arranged along the X axis, and m subpixels 20 are arranged along the Y axis.
  • Pixel 10 includes a plurality of subpixels 20 that emit light of different colors.
  • the subpixel 20R emits red light.
  • the subpixel 20G emits green light.
  • the subpixel 20B emits blue light.
  • the emission color and brightness of one pixel 10 are determined by the three types of sub-pixels 20R, 20G, and 20B emitting light with desired brightness.
  • One pixel 10 includes three sub-pixels 20R, 20G, 20B, and the sub-pixels 20R, 20G, 20B are linearly arranged on the X-axis, for example, as in the example shown in FIG.
  • Each pixel 10 may have sub-pixels of the same color arranged in the same column, or sub-pixels of different colors may be arranged in each column as in this example.
  • the image display device 1 further includes a power supply line 3 and a ground line 4.
  • the power line 3 and the ground line 4 are arranged in a grid pattern along the array of subpixels 20.
  • the power supply line 3 and the ground line 4 are electrically connected to each subpixel 20, and power is supplied to each subpixel 20 from a DC power source connected between the power supply terminal 3a and the GND terminal 4a.
  • the power supply terminal 3a and the GND terminal 4a are provided at the ends of the power supply line 3 and the ground line 4, respectively, and are connected to a DC power supply circuit provided outside the display area 2. A positive voltage is supplied to the power supply terminal 3a with reference to the GND terminal 4a.
  • the image display device 1 further has a scanning line 6 and a signal line 8.
  • the scanning line 6 is laid out in a direction parallel to the X axis. That is, the scanning lines 6 are laid out along the array in the row direction of the subpixels 20.
  • the signal line 8 is laid out in a direction parallel to the Y axis. That is, the signal line 8 is laid out along the array of the subpixels 20 in the column direction.
  • the image display device 1 further includes a row selection circuit 5 and a signal voltage output circuit 7.
  • the row selection circuit 5 and the signal voltage output circuit 7 are provided along the outer edge of the display area 2.
  • the row selection circuit 5 is provided along the Y-axis direction of the outer edge of the display area 2.
  • the row selection circuit 5 is electrically connected to the subpixels 20 of each column via the scanning line 6 to supply a selection signal to each subpixel 20.
  • the signal voltage output circuit 7 is provided along the X-axis direction of the outer edge of the display area 2.
  • the signal voltage output circuit 7 is electrically connected to the subpixels 20 of each line via the signal line 8 to supply a signal voltage to each subpixel 20.
  • the subpixel 20 includes a light emitting element 22, a selection transistor 24, a drive transistor 26, and a capacitor 28.
  • the selection transistor 24 may be displayed as T1
  • the drive transistor 26 may be displayed as T2
  • the capacitor 28 may be displayed as Cm.
  • the light emitting element 22 is connected in series with the drive transistor 26.
  • the drive transistor 26 is a p-channel TFT, and an anode electrode connected to the p-type semiconductor layer of the light emitting element 22 is connected to a drain electrode which is a main electrode of the drive transistor 26.
  • the series circuit of the light emitting element 22 and the drive transistor 26 is connected between the power supply line 3 and the ground line 4.
  • the drive transistor 26 corresponds to, for example, the transistor 103 in FIG. 1, and the light emitting element 22 corresponds to, for example, the light emitting element 150 in FIG.
  • the current flowing through the light emitting element 22 is determined by the voltage applied between the gate and the source of the drive transistor 26, and the light emitting element 22 emits light with a brightness corresponding to the flowing current.
  • the selection transistor 24 is connected between the gate electrode of the drive transistor 26 and the signal line 8 via a main electrode.
  • the gate electrode of the selection transistor 24 is connected to the scanning line 6.
  • a capacitor 28 is connected between the gate electrode of the drive transistor 26 and the power supply line 3.
  • the row selection circuit 5 selects one row from the array of subpixels 20 in the m row and supplies the selection signal to the scanning line 6.
  • the signal voltage output circuit 7 supplies a signal voltage having the required analog voltage value for each subpixel 20 in the selected row.
  • a signal voltage is applied between the gate and source of the drive transistor 26 of the subpixel 20 in the selected row.
  • the signal voltage is held by the capacitor 28.
  • the drive transistor 26 causes a current corresponding to the signal voltage to flow through the light emitting element 22.
  • the light emitting element 22 emits light with a brightness corresponding to the current flowing through the light emitting element 22.
  • the row selection circuit 5 sequentially switches the rows to be selected and supplies the selection signal. That is, the row selection circuit 5 scans the row in which the subpixels 20 are arranged. A current corresponding to the signal voltage flows through the light emitting element 22 of the subpixel 20 that is sequentially scanned to emit light. Each pixel 10 emits light with an emission color and brightness determined by the emission color and brightness emitted by the subpixels 20 of each RGB color, and an image is displayed in the display area 2.
  • FIG. 4 is a schematic plan view illustrating a part of the image display device of the present embodiment.
  • a light emitting element 150-1 (light emitting element 22 in FIG. 3) and a driving transistor 103 (driving transistor 26 in FIG. 3) are laminated in the Z-axis direction. ..
  • the anode electrode of the light emitting element 150-1 is electrically connected to the drain electrode of the transistor 103 by the via 161d.
  • the cathode electrode of the light emitting element 150-1 is connected to the light reflecting plate 130a, and the light reflecting plate 130a is electrically connected to the ground wire 4 shown in FIG. 3 by the via 161k.
  • the anode electrode and the cathode electrode are electrically connected to a predetermined circuit via vias.
  • FIG. 4 schematically shows these three-dimensional configurations in two plan views.
  • the plan view of the I layer is schematically displayed in the upper part of FIG. 4, and the plan view of the II layer is schematically displayed in the lower part.
  • the first layer is referred to as "I” and the second layer is referred to as "II".
  • the first layer is a layer on which light emitting elements 150-1 and 150-2 are formed. That is, in FIG. 1, the first layer shows an element on the positive side of the Z axis with respect to the first interlayer insulating film 112, and the element is a layer from the light reflection plate 130a to the second wiring layer 160. is there.
  • the second interlayer insulating film 156 is not shown.
  • the second layer shows an element on the positive side of the Z axis with respect to the TFT lower layer film 106, and the element is a layer from the transistor 103 to the first interlayer insulating film 112.
  • the substrate 102, the insulating layer 105, the insulating film 108, and the first interlayer insulating film 112 are not shown.
  • FIG. 1 The cross-sectional view of FIG. 1 is an arrow cross-sectional view of the AA'line shown by a broken line of the alternate long and short dash line in each of the I layer and the II layer of FIG.
  • the case where the wiring 160k of the first layer and the wiring 110s of the second layer are extended substantially parallel to the Y-axis direction on substantially the same X coordinate is illustrated.
  • the end portion on the A side is set to the position of the wiring 160k, 110s.
  • the wirings 160k and 110s are extended along the Y-axis direction on the same X coordinate and arranged parallel to each other. Therefore, in the cross-sectional view taken along the AA'line, the cross section of the end portion of the wiring 160k on the A side actually exists above the wiring 110s.
  • the cross section of the wiring 110s is shown at the end on the A side in the cross-sectional view such as FIG.
  • the display of the B region including the translucent electrode 159k will be omitted.
  • the cross section of the wiring 160k and the translucent electrode 159k is shown on the A'side, and the display is omitted for the C region including the wiring 110s.
  • the B region is a region of the cutting line AA'line in which the wiring 160k of the I layer and the translucent electrode 159k exist, but are not shown on the cross-sectional view.
  • the C region is a region of the cutting line AA'line in which the wiring 110s of the second layer exists, but is not shown on the cross-sectional view.
  • the light emitting elements 150-1 and 150-2 are provided on the light reflecting plate 130a.
  • the light reflecting plate 130a is connected to the via 161k shown in FIG.
  • the via 161k shown in FIG. 1 is a contact hole 162k1 and is connected to the wiring 160k.
  • the light emitting element 150-1 is provided with an opening 158-1 of an interlayer insulating film.
  • a via 161d is provided adjacent to the light emitting element 150-1.
  • the via 161d is schematically shown by a chain double-dashed line in FIG.
  • the via 161d is connected to the wiring 160a-1 by the contact hole 162d1.
  • the translucent electrode 159a1 is provided over the light emitting element 150-1 and the wiring 160a-1 exposed from the opening 158-1, and electrically connects the light emitting element 150-1 and the via 161d.
  • the via 161d is connected to the wiring 110d by the contact hole 162d2.
  • the wiring 110d is connected to the via 111d shown in FIG. 1 via the contact hole 111c1 opened in the insulating film 108, and is connected to the drain electrode provided in the TFT channel 104 of the transistor 103.
  • the light emitting element 150-1 formed in the I layer and the wiring 110d formed in the II layer different from the I layer are provided by the via 161d penetrating the two interlayer insulating films 112 and 156. It can be electrically connected, and the light emitting element 150-1 and the transistor 103 can be electrically connected.
  • the interlayer connection between the light emitting element 150-2 and the transistor driving the light emitting element 150-2 is also made via vias provided so as to penetrate the two interlayer insulating films.
  • the arrangement of the light reflecting plate 130a and the light emitting elements 150-1 and 150-2 will be described with reference to FIG.
  • the light reflecting plate 130a is a square having a length L1 in the X-axis direction and a length W1 in the Y-axis direction in the XY plan view.
  • the light emitting element 150-1 has a rectangular bottom surface having a length L21 in the X-axis direction and a length W2 in the Y-axis direction in an XY plan view.
  • the light emitting element 150-2 has a rectangular bottom surface having a length L22 in the X-axis direction and a length W2 in the Y-axis direction in an XY plan view.
  • the length of each part is set so that L1> L21, L1> L22, W1> W2. That is, the area of the light reflecting plate 130a is set to be larger than the sum of the areas of the light emitting elements 150-1 and 150-2.
  • the light reflecting plate 130a is provided directly below the light emitting elements 150-1 and 150-2, and the outer circumference of the light reflecting plate 130a includes the entire outer circumference of the light emitting elements 150-1 and 150-2.
  • the outer circumference of the light reflecting plate 130a may include the entire outer circumference of the light emitting elements 150-1 and 150-2.
  • the shape of the light reflecting plate 130a is not limited to a square shape and may be any suitable shape depending on the layout on the circuit board 100 and the like.
  • the light emitting element 150 emits light upward.
  • the conductive layer 130 includes a light reflecting plate 130a having light reflection property, the light scattered downward of the light emitting elements 150-1 and 150-2 is reflected upward by the light reflecting plate 130a. Therefore, the proportion of the light emitted from the light emitting elements 150-1 and 150-2 is distributed to the light emitting surfaces 153S1 and 153S2. Therefore, the substantial luminous efficiency of the light emitting element 150 is improved.
  • the light reflection plate 130a in this way, the arrival of light below the light emitting elements 150-1 and 150-2 is suppressed, so that the circuit element can be changed to the light emitting elements 150-1 and 150-2. Even when it is arranged in the immediate vicinity of the circuit element, the influence of light on the circuit element can be reduced.
  • the conductive layer 130 is not limited to the case where it is connected to the ground wire 4 by the light reflection plate 130a, and may be connected to another potential such as the potential of the power supply line 3 depending on the circuit configuration and the circuit layout.
  • FIG. 5A to 7B are schematic cross-sectional views illustrating the method of manufacturing the image display device of the present embodiment.
  • the circuit board 1100 is prepared.
  • the circuit board (first board) 1100 includes the circuit 101 described with reference to FIG. 1 and the like.
  • a first interlayer insulating film (first insulating film) 112 is provided so as to cover the wiring layer 110.
  • the conductive layer 1130 is formed on the interlayer insulating film 112.
  • the conductive layer 1130 is patterned so as to leave a portion where a light emitting element is formed after forming a layer of a metal material for forming the conductive layer 1130 on the entire surface of the interlayer insulating film 112 by sputtering or the like.
  • a mask having a pattern in which a portion where the light emitting element is formed may be provided on the interlayer insulating film 112, and then a patterned conductive layer may be formed.
  • a metal material such as Cu or Hf is used. Sputtering or the like is preferably used for forming the conductive layer 1130 in order to form a film at a low temperature.
  • the patterned conductive layer 1130 is single crystallized by an annealing treatment.
  • the annealing treatment is performed so that it is single crystallized over the patterned conductive layer 1130.
  • an annealing treatment by laser irradiation is preferably used.
  • the conductive layer 1130 can be single-crystallized in a state where the influence of the temperature on the lower layer than the conductive layer is suppressed to a low temperature of about 400 ° C. to about 500 ° C., so that the circuit board 1100 formed by the LTPS process can be single-crystallized. Suitable for processing.
  • the semiconductor layer 1150 is formed over the single crystallized conductive layer 1130a.
  • the semiconductor layer 1150 is formed in the order of the n-type semiconductor layer 1151, the light emitting layer 1152, and the p-type semiconductor layer 1153 from the side of the conductive layer 1130a in the positive direction of the Z axis. Crystal defects due to crystal lattice mismatch are likely to occur in the early stage of growth of the semiconductor layer 1150, and crystals containing GaN as a main component generally exhibit n-type semiconductor characteristics. Therefore, the yield can be improved by growing the n-type semiconductor layer 1151 onto the conductive layer 1130a.
  • a physical vapor deposition method such as thin film deposition, ion beam deposition, molecular beam epitaxy (MBE) or sputtering is used, and a low temperature sputtering method is preferably used.
  • MBE molecular beam epitaxy
  • a low temperature sputtering method it is preferable to assist with light or plasma at the time of film formation because the temperature can be lowered.
  • Epitaxial growth by MOCVD may exceed 1000 ° C.
  • a GaN crystal containing a light emitting layer can be epitaxially grown on a single crystal metal layer at a low temperature of about 400 ° C. to 700 ° C.
  • Non-Patent Document 1 See 2nd class).
  • Such a low temperature sputtering method is consistent with forming the semiconductor layer 1150 on a circuit board having a TFT or the like formed by the LTPS process.
  • a GaN semiconductor layer 1150 By growing a GaN semiconductor layer 1150 on the conductive layer 1130a that has been single crystallized over the entire surface using an appropriate film forming technique, a single crystallized semiconductor that includes a light emitting layer 1152 on the conductive layer 1130a.
  • Layer 1150 is formed.
  • the conductive layer 1130a is patterned, and when there is a portion where the conductive layer 1130a does not exist or a portion of the conductive layer that has not been single crystallized, as shown by the broken line in FIG. 6A, the conductive layer 1130a is single crystallized containing GaN. Unfinished deposits 1160 are formed.
  • the conductive layer 1130a of a single crystal metal is used as a seed to promote GaN crystal formation.
  • a conductive buffer layer is provided on the conductive layer 1130a, and the semiconductor layer is formed on the buffer layer by the above-mentioned low-temperature sputtering method or the like. You may try to grow it.
  • the buffer layer may be of any type as long as it is a material that promotes GaN crystal formation.
  • the graphene sheet in the case of other embodiments described later may be used.
  • the conductive layer is formed into a conductive layer 130 having a desired shape and pattern by etching or the like.
  • the conductive layer 130 includes a light reflecting plate (part) 130a.
  • the semiconductor layer 1150 is formed into a desired shape by etching or the like, and light emitting elements 150-1 and 150-2 are formed.
  • the area of the light emitting element 150-1 in the XY plan view is formed to be smaller than the area of the light emitting element 150-2 in the XY plan view.
  • a second interlayer insulating film (second insulating film) 156 that covers the first interlayer insulating film 112, the conductive layer 130, and the light emitting elements 150-1 and 150-2 is formed.
  • the via hole 162k is formed so as to penetrate the second interlayer insulating film 156.
  • the via hole 162d is formed so as to penetrate the interlayer insulating films 112 and 156.
  • openings 158-1 and 158-2 are formed in the interlayer insulating film 156, and the light emitting surfaces 153S1 and 153S2 are exposed.
  • the openings 158-1 and 158-2 may be formed before the via holes 162k and the via holes 162d are formed, or after the via holes 162k and the via holes 162d are formed.
  • the exposed light emitting surfaces 153S1 and 153S2 are roughened.
  • the conductive material is filled in the via holes 162d and 162k shown in FIG. 7A.
  • the second wiring layer 160 is formed.
  • a translucent electrode 159a1 is formed on the light emitting surface 153S1 and over the wiring 160a-1, and the p-type semiconductor layer 153-1 and the wiring 160a-1 are electrically connected.
  • a translucent electrode 159a2 is formed over the light emitting surface 153S2, and the translucent electrode 159a2 is electrically connected to an electrode for another driving transistor different from the transistor 103.
  • a translucent electrode 159k is also formed on the wiring 160k at the same time.
  • the interlayer insulating film 156 may cover the light emitting elements 150-1, 150-2 and the like for insulation.
  • the flatness of the interlayer insulating film 156 may be such that a second wiring layer 160 can be formed on the interlayer insulating film 156, and it does not have to be flattened when the interlayer insulating film 156 is formed.
  • the steps for flattening can be reduced, and the thickness of the interlayer insulating film 156 is reduced except where the light emitting elements 150-1 and 150-2 are formed.
  • the depths of the via holes 162k and 162d can be made shallow. By forming the via hole shallowly, a sufficient opening diameter can be secured over the depth of the via hole, so that it becomes easy to secure an electrical connection by the via. Therefore, it is possible to suppress a decrease in yield due to poor electrical characteristics.
  • FIGS. 8A and 8B are schematic cross-sectional views illustrating a manufacturing method of a modified example of the image display device of the present embodiment.
  • FIGS. 8A and 8B show the manufacturing process for forming the subpixels shown in FIG. 2A.
  • the same steps as in the case of the other embodiments described above are performed until the openings 158-1 and 158-2 are formed. Therefore, in the following description, it is assumed that the steps of FIGS. 8A and 8B are executed after FIG. 7A.
  • the light emitting surfaces 153S1 and 153S2 are coarse, respectively. Be surfaced.
  • the via hole 162k penetrating the interlayer insulating film 156 is filled with the conductive material to form the via 161k.
  • the via holes 162d penetrating the interlayer insulating films 112 and 156 are filled with the conductive material to form the vias 161d.
  • a wiring layer 160 including each wiring 160a1-1, 160a1-2, 160k is formed on the interlayer insulating film 156.
  • the wiring 160a1-1 is connected to a surface including the exposed light emitting surface 153S1.
  • the wiring 160a1-2 is connected to the surface including the exposed light emitting surface 153S2.
  • 9A and 9B are schematic cross-sectional views illustrating a manufacturing method of a modified example of the image display device of the present embodiment.
  • 9A and 9B show the manufacturing process for forming the subpixels shown in FIG. 2B.
  • the same steps as in the case of the other embodiments described above are performed until the light emitting element is formed. Therefore, in the following description, it is assumed that the steps of FIGS. 9A and 9B are executed after FIG. 6A.
  • the interlayer insulating film 156 is formed of an impermeable insulating material such as white resin
  • the interlayer insulating film 256 is a translucent insulating material. Is formed by, as described above.
  • the conductive layer 1130a shown in FIG. 6A is formed into a conductive layer 130 having a desired shape and pattern by etching or the like.
  • the conductive layer 130 includes a light reflecting plate 130a.
  • the semiconductor layer 1150 shown in FIG. 6A is formed into a desired shape by etching or the like to form light emitting elements 150a-1 and 150a-2.
  • the first interlayer insulating film 112, the conductive layer 130, and the second interlayer insulating film 256 covering the light emitting elements 150a-1 and 150a-2 are formed.
  • the interlayer insulating film 256 is a translucent insulating resin, preferably a transparent resin.
  • Contact holes 162a-1 and 162a-2 are formed in the second interlayer insulating film 256.
  • a via hole 162k is formed that penetrates the interlayer insulating film 256.
  • Via holes 162d are formed so as to penetrate the interlayer insulating films 112 and 156.
  • RIE is used for forming contact holes and via holes.
  • the contact holes 162a-1, 162a-2 and the via holes 162d, 162k are filled with the conductive material.
  • the second wiring layer 160 is formed, and the wiring 160a2-1, 160a2-2, 160k is formed.
  • the wiring 160a2-1 is connected to the p-type semiconductor layer 153a-1 at one end and to the wiring 110d via the via 161d at the other end.
  • the wiring 160a2-2 is connected to the p-type semiconductor layer 153a-2 at one end and is connected to the wiring for another driving transistor via a via at the other end.
  • the second wiring layer 160 may be formed at the same time that the conductive material is filled in the via holes 162d and 162k.
  • a part of the circuit other than the subpixels 20-1 and 20-2 is formed in the circuit board 1100.
  • the row selection circuit 5 shown in FIG. 3 is formed in the circuit board 1100 together with the drive transistor, the selection transistor, and the like. That is, the row selection circuit 5 may be incorporated at the same time by the manufacturing process described above.
  • the signal voltage output circuit 7 is incorporated in a semiconductor device manufactured by a manufacturing process capable of high integration by microfabrication.
  • the signal voltage output circuit 7 is mounted on another board together with the CPU and other circuit elements, and is interconnected with the wiring of the circuit board 1100, for example, before incorporating the color filter described later or after incorporating the color filter. Will be done.
  • the circuit board 1100 includes a translucent substrate 102 made of a glass substrate including the circuit 101, and the substrate 102 is substantially square.
  • Circuit boards 1100 are formed with circuits 101 for one or more image display devices.
  • the circuit 101 for forming one image display device is divided into a plurality of circuit boards 1100 and formed, and the divided circuits are combined to form one image display device. May be configured.
  • the circuit board 1100 includes one board 102, and a plurality of circuits 101 are arranged on one board 102, for example, in a grid pattern.
  • the circuit 101 includes all the subpixels 20 and the like required for one image display device 1.
  • the circuits 101 arranged adjacent to each other are provided with an interval of about the width of the scribe line. No circuit element or the like is arranged at the end of the circuit 101 or near the end.
  • FIG. 10 is a schematic cross-sectional view illustrating the method for manufacturing the image display device of the present embodiment.
  • the structure inside the circuit board 1100, the interlayer insulating film 112, the vias 161d, 161k, the wiring layer 160, and the like shown in FIG. 1 and the like are not shown.
  • a part of the color conversion member such as the color filter 180 is displayed.
  • a structure including a conductive layer 130, a light emitting element 150, an interlayer insulating film 156, a surface resin layer 170, and vias whose display is omitted is referred to as a light emitting circuit unit 172.
  • a structure in which the light emitting circuit unit 172 is provided on the circuit board 1100 is referred to as a structure 1192.
  • the color filter (wavelength conversion member) 180 is adhered to the structure 1192 on one surface.
  • the other surface of the color filter 180 is adhered to the glass substrate 186.
  • a transparent thin film adhesive layer 188 is provided on one surface of the color filter 180, and is adhered to the surface of the structure 1192 on the light emitting circuit portion 172 side via the transparent thin film adhesive layer 188.
  • the color filter 180 has color conversion units arranged in the positive direction of the X-axis in the order of red, green, and blue.
  • a red color conversion layer 183R is provided as the first layer.
  • a green color conversion layer 183G is provided as the first layer.
  • a blue color conversion layer 183B is provided as the first layer.
  • the filter layer 184 is provided on the second layer, but it goes without saying that the frequency characteristic of the filter layer 184 can be changed for each color of the color conversion unit.
  • a single-layer color conversion layer 183B may be provided.
  • a light-shielding unit 181 is provided between the color conversion units.
  • the color filter 180 is attached to the structure 1192 by aligning the positions of the color conversion layers 183R, 183G, and 183B of each color with the positions of the light emitting element 150.
  • 11A to 11D are schematic cross-sectional views showing a modified example of the manufacturing method of the image display device of the present embodiment.
  • 11A-11D show a method of forming a color filter by inkjet.
  • a structure 1192 in which the light emitting circuit unit 172 is attached to the circuit board 1100 is prepared.
  • a light-shielding portion 181 is formed on the structure 1192.
  • the light-shielding portion 181 is formed by using, for example, screen printing, photolithography technology, or the like.
  • the phosphor corresponding to the emitted color is ejected from the inkjet nozzle to form the color conversion layer 183.
  • the phosphor colors the region where the light-shielding portion 181 is not formed.
  • a fluorescent paint using a general phosphor material, a perovskite phosphor material, or a quantum dot phosphor material is used.
  • a perovskite phosphor material or a quantum dot phosphor material it is preferable because each emission color can be realized, monochromaticity is high, and color reproducibility can be high.
  • the drying process is performed at an appropriate temperature and time. The thickness of the coating film at the time of coloring is set to be thinner than the thickness of the light-shielding portion 181.
  • the phosphor is not ejected.
  • the thickness of the coating film of the blue phosphor is preferably the light-shielding portion 181. It is said to be about the same thickness as.
  • the paint for the filter layer 184 is ejected from the inkjet nozzle.
  • the paint is applied over the coating film of the phosphor.
  • the total thickness of the coating film of the phosphor and the paint is about the same as the thickness of the light-shielding portion 181.
  • a circuit element such as a transistor 103 for driving the light emitting elements 150-1 and 150-2 is formed on the circuit board 1100 in advance, and the interlayer insulating film 112 of the circuit board 1100 is formed.
  • a conductive layer 1130 is formed on the top.
  • the conductive layer 1130 is single crystallized by annealing the entire surface.
  • the semiconductor layer 1150 can be formed on the single crystallized conductive layer 1130a.
  • the number of subpixels exceeds 24 million, and in the case of an 8K image quality image display device, the number of subpixels exceeds 99 million. It takes an enormous amount of time to mount such a large number of light emitting elements individually on a circuit board, and it is difficult to realize an image display device using micro LEDs at a realistic cost. Further, if a large number of light emitting elements are individually mounted, the yield is reduced due to poor connection at the time of mounting, and further cost increase is unavoidable.
  • the light emitting elements 150-1 and 150-2 are formed after the entire semiconductor layer 1150 is formed on the conductive layer 1130 formed on the circuit board 1100. Since it is formed, the transfer process of the light emitting element can be reduced.
  • the semiconductor layer 1150 having a uniform crystal structure grows on the conductive layer 1130a of the single crystal metal, the light emitting elements can be arranged in a self-aligned manner by appropriately patterning the conductive layer 1130a. Therefore, it is not necessary to align the light emitting elements on the circuit board 1100, and the light emitting elements 150-1 and 150-2 can be easily miniaturized, which is suitable for a high-definition display.
  • the light emitting element is directly formed on the circuit board by etching or the like, the light emitting element and the circuit element in the circuit board 1100 are electrically connected by forming vias, so that a uniform connection structure can be realized. , The decrease in yield can be suppressed.
  • the TFT formed on the glass substrate can be used as the circuit board 1100, so that the existing flat panel manufacturing process or plant can be used.
  • the image display device 1 of the present embodiment includes a conductive layer 130 including a light reflection plate 130a, and a light emitting element is formed on the light reflection plate 130a.
  • the light emitting surfaces 153S1 and 153S2 of the light emitting elements 150 and 150a are provided on the side facing the interlayer insulating film 112 provided with the light reflecting plate 130a. Therefore, the light scattered downward from the light emitting elements 150-1 and 150-2 is reflected by the light reflecting plate 130a and distributed to the light emitting surfaces 153S1 and 153S2. Therefore, the luminous efficiency of the light emitting elements 150-1 and 150-2 is substantially improved.
  • the light reflecting plate 130a can block the scattered light below the light emitting elements 150-1 and 150-2, the circuit elements located in the vicinity of the light emitting elements 150-1 and 150-2 are irradiated with the light. It is possible to prevent malfunction of the circuit element and the like.
  • the light reflecting plate 130a has conductivity and is ohmic-connected to the n-type semiconductor layer 151-1, 151-2. Therefore, it can be used for electrical connection with the light emitting elements 150-1 and 150-2, and the wiring on the light emitting surfaces 153S1 and 153S2 can be reduced.
  • FIG. 12 is a schematic cross-sectional view illustrating a part of the image display device according to the present embodiment.
  • FIG. 12 shows a cross section seen from an arrow at a position corresponding to the AA'line of FIG.
  • the subpixels 220-1,220-2 include the graphene layer 140, and the graphene layer 140 includes the graphene sheets 140-1 and 140-2, unlike the case of the other embodiments. It's different.
  • the configurations of the light emitting elements 250-1 and 250-2 and the configurations of the transistor 203 for driving the light emitting element are different from those of the other embodiments described above.
  • the same components as in the case of the other embodiments described above are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.
  • the subpixels 220-1,220-2 of the image display device of the present embodiment include the graphene layer 140.
  • the graphene layer 140 includes graphene sheets 140-1 and 140-2, and the graphene sheets 140-1 and 140-2 are provided on the light reflection plate 130a.
  • the light emitting element 250-1 is provided on the graphene sheet 140-1.
  • the light emitting element 250-2 is provided on the graphene sheet 140-2.
  • the graphene sheets 140-1 and 140-2 are separately provided for each of the light emitting elements 250-1 and 250-2, but since the graphene sheet has conductivity, one graphene sheet is provided. A plurality of light emitting elements may be provided on the sheet.
  • the two light emitting elements 250-1 and 250-2 are electrically connected via a graphene sheet 140-1 and 140-2 and a light reflecting plate 130a.
  • the light emitting element 250-1 has a p-type semiconductor layer 253-1, a light emitting layer 252-1 and an n-type semiconductor layer 251 from the side of the first interlayer insulating film 112 toward the light emitting surface 251S1. They are stacked in the order of -1.
  • the light emitting element 250-2 is laminated in the order of the p-type semiconductor layer 253-2, the light emitting layer 252-2, and the n-type semiconductor layer 251-2 from the side of the first interlayer insulating film 112 toward the side of the light emitting surface 251S2.
  • the n-type semiconductor layer 251-1,251-2 is the light emitting surface 251S1,251S2.
  • the light emitting surface 251S1,251S2 is a surface of the n-type semiconductor layer 251-1,251-2 facing the surface in contact with the light emitting layer 252-1,252-2.
  • the light emitting surfaces 251S and 1,251S2 are all roughened.
  • the light emitting elements 250-1 and 250-2 may be made of the same material as in the other embodiments described above.
  • the light emitting element 350 emits, for example, blue light having a wavelength of about 467 nm ⁇ 20 nm or bluish purple light having a wavelength of 410 nm ⁇ 20 nm.
  • the second interlayer insulating film (second insulating film) 156 covers the first interlayer insulating film 112, the conductive layer 130, the graphene sheets 140-1 and 140-2, and the light emitting elements 250-1 and 250-2. ..
  • the second interlayer insulating film 156 has openings 258-1,258-2. The openings 258-1 and 258-2 are formed on the light emitting elements 250-1 and 250-2, respectively, and the interlayer insulating film 156 is not provided on the light emitting surfaces 251S and 1,251S2.
  • Transistor 203 is an n-channel TFT in this example.
  • Transistor 203 includes a TFT channel 204 and a gate 107.
  • the TFT channel 204 is a region of polycrystalline Si formed on the first surface 102a of the substrate 102, and is polycrystalline and activated by annealing the region formed as amorphous Si by laser irradiation. ..
  • the TFT channel 204 includes regions 204s, 204i, 204d.
  • the regions 204s, 204i, and 204d are all provided on the TFT underlayer film 106.
  • the area 204i is provided between the areas 204s and 204d.
  • the regions 204s and 204d are doped with n-type impurities such as P, and are ohmic-connected to the vias 111s and 111d.
  • the gate 107 is provided on the TFT channel 204 via the insulating layer 105. When a potential higher than the region 204s is applied to the gate 107, a channel is formed in the region 204i to control the current flowing between the regions 204s and 204d.
  • the structure of the upper part of the transistor 203 and the structure of the wiring layer 110 are the same as those of the other embodiments described above.
  • the via 161a is provided so as to penetrate the interlayer insulating film 156. One end of the via 161a is connected to the light reflecting plate 130a. The other end of the via 161a is connected to the wiring 260a. A translucent electrode 259a is provided over the wiring 260a. The wiring 260a and the translucent electrode 259a are connected to, for example, the power supply line 3 of FIG. 13 which will be described later. Therefore, the p-type semiconductor layers 253-1,253-2 of the light emitting elements 250-1 and 250-2 include graphene sheets 140-1, 140-2, light reflection plates 130a, vias 161a, wiring 260a, and translucent electrodes. It is electrically connected to the power supply line 3 via 259a.
  • the via 161d is provided so as to penetrate the interlayer insulating films 112 and 156.
  • One end of the via 161d is connected to the wiring 110d.
  • the wiring 110d is connected to the region 204d, which is the drain electrode of the transistor 203, via the via 111d.
  • the other end of the via 161d is connected to the wiring 260k1.
  • a translucent electrode 259k1 is provided over the wiring 260k1.
  • the translucent electrode 259k1 is provided over the light emitting surface 251S1.
  • the translucent electrode 259k1 is provided between the wiring 260k1 and the light emitting surface 251S1, and electrically connects the wiring 260k1 and the light emitting surface 251S1.
  • the n-type semiconductor layer 251-1 of the light emitting element 250-1 is electrically connected to the transistor 203 via the translucent electrode 259k1, the wiring 260k1, the via 161d, and the wiring 110d.
  • the region 204s which is the source electrode of the transistor 203, is connected to the wiring 110s via the via 111s.
  • the wiring 110s is connected to, for example, the ground wire 4 of FIG. 13 which will be described later.
  • the n-type semiconductor layer 251-2 of the light emitting element 250-2 is also electrically connected to the transistor for driving the light emitting element 250-2 via the translucent electrode 259k2, as in the case of the light emitting element 250-1. Will be done.
  • FIG. 13 is a schematic block diagram illustrating an image display device according to the present embodiment.
  • the image display device 201 of the present embodiment includes a display area 2, a row selection circuit 205, and a signal voltage output circuit 207.
  • the sub-pixels 220 are arranged in a grid pattern on the XY plane, as in the case of the other embodiments described above.
  • Pixel 10 includes a plurality of subpixels 220 that emit light of different colors, as in the case of the other embodiments described above.
  • the subpixel 220R emits red light.
  • the subpixel 220G emits green light.
  • the subpixel 220B emits blue light.
  • the emission color and brightness of one pixel 10 are determined by the three types of sub-pixels 220R, 220G, and 220B emitting light with desired brightness.
  • One pixel 10 is composed of three sub-pixels 220R, 220G, 220B, and the sub-pixels 220R, 220G, 220B are linearly arranged on the X-axis, for example, as in this example.
  • Each pixel 10 may have sub-pixels of the same color arranged in the same column, or sub-pixels of different colors may be arranged in each column as in this example.
  • the subpixel 220 includes a light emitting element 222, a selection transistor 224, a drive transistor 226, and a capacitor 228.
  • the selection transistor 224 may be displayed as T1
  • the drive transistor 226 may be displayed as T2
  • the capacitor 228 may be displayed as Cm.
  • the light emitting element 222 is provided on the power supply line 3 side, and the drive transistor 226 connected in series with the light emitting element 222 is provided on the ground wire 4 side. That is, the drive transistor 226 is connected to the lower potential side than the light emitting element 222.
  • the drive transistor 226 is an n-channel transistor.
  • a selection transistor 224 is connected between the gate electrode of the drive transistor 226 and the signal line 208.
  • the capacitor 228 is connected between the gate electrode of the drive transistor 226 and the ground wire 4.
  • the row selection circuit 205 and the signal voltage output circuit 207 supply a signal voltage having a polarity different from that of the other embodiment described above to the signal line 208 in order to drive the drive transistor 226 which is an n-channel transistor.
  • the row selection circuit 205 supplies a selection signal to the scanning line 206 so as to sequentially select one row from the array of subpixels 220 in the m row.
  • the signal voltage output circuit 207 supplies a signal voltage having the required analog voltage value to each subpixel 220 in the selected row.
  • the drive transistor 226 of the subpixel 220 in the selected row causes a current corresponding to the signal voltage to flow through the light emitting element 222.
  • the light emitting element 222 emits light with a brightness corresponding to the flowing current.
  • FIG. 14A to 15B are schematic cross-sectional views illustrating the method of manufacturing the image display device of the present embodiment.
  • the conductive layer 1130 is formed on the circuit board 1100 and the annealing process is performed.
  • the steps after the process shown in FIG. 5B will be described.
  • the graphene layer 1140 is formed over the conductive layer 1130a which has been patterned and monocrystallized by an annealing treatment.
  • the graphene layer 1140 is formed by a low temperature process means such as pulse sputtering.
  • the semiconductor layer 1150 is formed over the graphene layer 1140.
  • the semiconductor layer 1150 is formed in the order of the p-type semiconductor layer 1153, the light emitting layer 1152, and the n-type semiconductor layer 1151 from the side of the conductive layer 1130a toward the positive direction of the Z axis.
  • the semiconductor layer 1150 For the formation of the semiconductor layer 1150 , a physical vapor deposition method such as thin film deposition, ion beam deposition, MBE or sputtering is used as in the case of other embodiments, and a low temperature sputtering method is preferably used.
  • a physical vapor deposition method such as thin film deposition, ion beam deposition, MBE or sputtering is used as in the case of other embodiments, and a low temperature sputtering method is preferably used.
  • a single crystallized semiconductor layer 1150 including the light emitting layer 1152 is formed over the graphene layer 1140 (see Non-Patent Documents 1, 2, etc.).
  • the semiconductor layer 1150 is formed via the graphene layer 1140 grown over the conductive layer 1130a made of a single crystal metal layer, so that the semiconductor layer 1150 having a more stable and high quality GaN crystal is formed. Can be formed.
  • the conductive layer 130 and the light reflecting plate 130a are made of a single crystal metal layer, they can be electrically connected to the semiconductor layer 1150 with low resistance.
  • the semiconductor layer 1150 is formed into a required shape by RIE or the like, and light emitting elements 250-1 and 250-2 are formed.
  • the graphene layer 1140 shown in FIG. 14B is overetched and formed into graphene sheets 140-1 and 140-2 having an outer peripheral shape corresponding to the outer peripheral shape of the light emitting elements 250-1 and 250-2. ..
  • the conductive layer 130 is also molded to form the desired light reflecting plate 130a. After that, the first interlayer insulating film 112, the conductive layer 130, and the light emitting elements 250-1 and 250-2 are covered to form the second interlayer insulating film 156.
  • the via hole 162a is formed so as to penetrate the second interlayer insulating film 156.
  • the via hole 162d is formed so as to penetrate the interlayer insulating films 112 and 256.
  • openings 258-1,258-2 are formed in the interlayer insulating film 156, and the light emitting surfaces 251S and 1,251S2 are exposed.
  • the exposed light emitting surfaces 251S1,251S2 are roughened.
  • the openings 258-1 and 258-2 may be formed before the via holes 162a and the via holes 162d are formed, or after the via holes 162a and the via holes 162d are formed.
  • the via holes 162a and 162d shown in FIG. 15A are filled with the conductive material to form the vias 161a and 161d.
  • the second wiring layer 160 is formed at the same time as filling the via holes.
  • the second wiring layer 160 is formed at the same time that the vias 161a and 161d are formed.
  • a translucent electrode 259k1 is formed on the light emitting surface 251S1 and over the wiring 260k1, and the n-type semiconductor layer 251-1 and the wiring 260k1 are electrically connected.
  • a translucent electrode 259k2 is formed over the light emitting surface 251S2, and the translucent electrode 259k2 is electrically connected to an electrode for another driving transistor different from the transistor 203.
  • a translucent electrode 259a is also formed on the wiring 260a at the same time.
  • a color filter is formed as in the case of other embodiments.
  • the image display device of the present embodiment can be manufactured.
  • the effect of the image display device of the present embodiment will be described.
  • the following effects are further obtained. That is, in the present embodiment, since the light emitting elements 250-1 and 250-2 are formed on the conductive layer 130 of the single crystal metal via the graphene sheets 140-1 and 140-2, the crystal structure has a higher quality. Light emitting elements 250-1 and 250-2 can be obtained. Therefore, the yield of the image display device can be improved.
  • FIG. 16 is a schematic cross-sectional view illustrating a part of the image display device according to the present embodiment.
  • FIG. 16 shows a cross section seen from an arrow at a position corresponding to the AA'line shown in FIG.
  • the image display device of the present embodiment includes subpixels 320-1.320-2.
  • Subpixels 320-1 and 320-2 include a common substrate 402.
  • the substrate 402 includes a first surface 402a.
  • Circuit elements such as the transistor 103 are provided on the first surface 402a.
  • the superstructure including the circuit element is formed on the first surface 402a.
  • the substrate 402 has flexibility.
  • the substrate 402 is, for example, a polyimide resin or the like.
  • the interlayer insulating films 112, 156, wiring layers 110, 160, and the like are preferably formed of a material having a certain degree of flexibility depending on the flexibility of the substrate 402.
  • the wiring layer 110 having the longest wiring length has the highest risk of being destroyed at the time of bending. Therefore, it is desirable to adjust various film thicknesses, materials, and film qualities so that the neutral surface including a plurality of protective films added to the front surface and the back surface is the position of the wiring layer 110 as needed. ..
  • the transistors 103 and the light emitting elements 150-1 and 150-2 formed on the substrate 402 are the same as in the case of the first embodiment, and for example, the circuit configuration of FIG. 3 is applied. Configurations including circuit configurations of other embodiments can also be easily applied.
  • FIG. 17A to 17B are schematic cross-sectional views illustrating the method of manufacturing the image display device of the present embodiment.
  • a circuit board 3100 different from that of the other embodiments described above is prepared.
  • the circuit board 3100 includes two layers of boards 102 and 402.
  • the substrate 402 is provided on the first surface 102a of the substrate 102, and is formed by, for example, applying and firing a polyimide material.
  • An inorganic film such as SiNx may be further sandwiched between the two layers of substrates 102 and 402.
  • the TFT lower layer film 106, the circuit 101, and the interlayer insulating film 112 are provided on the first surface 402a of the substrate 402.
  • the first surface 402a of the substrate 402 is a surface facing the surface on which the substrate 102 is provided.
  • the substrate 102 is removed from the structure on which the superstructure including the color filter and the like is formed, and a new circuit board 3100a is formed.
  • a new circuit board 3100a is formed for removing the substrate 102.
  • laser lift-off or the like is used for removing the substrate 102.
  • the removal of the substrate 102 is not limited to the above-mentioned time point, and can be performed at another appropriate time point.
  • the substrate 102 may be removed after wafer bonding or before the formation of the color filter. By removing the substrate 102 at an earlier point in time, defects such as cracks and chips in the manufacturing process can be reduced.
  • the substrate 402 Since the substrate 402 has flexibility, it can be bent as an image display device, and can be attached to a curved surface, used for a wearable terminal, or the like without any discomfort.
  • FIG. 18 is a schematic cross-sectional view illustrating a part of the image display device according to the present embodiment. As shown in FIG. 18, the image display device includes a subpixel group 420.
  • the subpixel group 420 includes transistors (plurality of transistors) 103-1 and 103-2, a first wiring layer (first wiring layer) 410, an interlayer insulating film (first insulating film) 112, and a plug 416k. , A conductive layer 430, a semiconductor layer 450, an interlayer insulating film (second insulating film) 456, and vias (plural vias) 461d1,461d2.
  • the circuit configuration shown in FIG. 3 is applied to the drive circuit.
  • the n-type semiconductor layer and the p-type semiconductor layer of the semiconductor layer can be interchanged at the top and bottom, and the semiconductor layer can be driven by an n-channel transistor. In that case, for example, the circuit configuration of FIG. 13 is applied to the drive circuit.
  • the semiconductor layer 450 includes two light emitting surfaces 453S1 and 453S2, and the subpixel group 420 substantially includes two subpixels.
  • the display area is formed by arranging the subpixel group 420 including substantially two subpixels in a grid pattern.
  • Transistors 103-1 and 103-2 are formed on TFT channels 104-1 and 104-2, respectively.
  • TFT channels 104-1 and 104-2 contain p-shaped doped regions, including a channel region between these regions.
  • An insulating layer 105 is formed on the TFT channels 104-1 and 104-2, and gates 107-1 and 107-2 are formed via the insulating layer 105, respectively.
  • Gates 107-1 and 107-2 are gates of transistors 103-1 and 103-2.
  • transistors 103-1 and 103-2 are p-channel TFTs.
  • An insulating film 108 covers the two transistors 103-1 and 103-2.
  • the wiring layer 410 is formed on the insulating film 108.
  • Vias 111s1 and 111d1 are provided between the p-shaped doped region of the transistor 103-1 and the wiring layer 410.
  • Vias 111s2 and 111d2 are provided between the p-shaped doped region of the transistor 103-2 and the wiring layer 410.
  • the wiring layer 410 includes wiring 410k, 410s1,410s2,410d1,410d2.
  • the wiring 410k is connected to the plug 416k via the connection portion 415k.
  • the wiring 410k is connected to, for example, the ground wire 4 shown in FIG.
  • the wiring 410s1 is electrically connected to the region corresponding to the source electrode of the transistor 103-1 via the via 111s1.
  • the wiring 410s2 is electrically connected to the region corresponding to the source electrode of the transistor 103-2 via the via 111s2.
  • the wirings 410s1 and 410s2 are connected to, for example, the power supply line 3 shown in FIG.
  • the wiring 410d1 is connected to the region corresponding to the drain electrode of the transistor 103-1 via the via 111d1.
  • the wiring 410d2 is connected to the region corresponding to the drain electrode of the transistor 103-2 via the via 111d2.
  • the interlayer insulating film 112 covers the transistors 103-1 and 103-2 and the wiring layer 410.
  • the plug 416k is formed on the interlayer insulating film 112.
  • the flattening film 414 is formed on the interlayer insulating film 112.
  • the flattening film 414 is also provided on the side surface of the plug 416k.
  • the plug 416k is embedded in the flattening film 414, and the flattening film 414 and the plug 416k have surfaces that are in the same plane in XY plan view. These surfaces are surfaces on the side facing the surface on the interlayer insulating film 112 side.
  • a conductive layer 430 is provided on the flattening film 414 and the plug 416k.
  • the conductive layer 430 includes a light reflecting plate 430a.
  • the conductive layer 430 and the light reflecting plate 430a are configured in the same manner as in the other embodiments described above. That is, at least a part of the conductive layer 430 is made of a single crystal metal. Preferably, the entire conductive layer 430 is a single crystal metal layer. At least a part of the light reflecting plate 430a is made of a single crystal metal. At least, the portion of the light reflecting plate 430a where the semiconductor layer 450 is provided is formed of a single crystal metal, for example, forming a single crystal metal layer. It is assumed that the entire conductive layer 430 and the light reflecting plate (part) 430a are formed of a single crystal metal layer.
  • the semiconductor layer 450 is provided on the light reflection plate 430a.
  • the single crystal metal is, for example, Cu, Hf, or the like.
  • the semiconductor layer 450 includes an n-type semiconductor layer (first semiconductor layer) 451 and a light emitting layer 452, and a p-type semiconductor layer (second semiconductor layer) 453.
  • the semiconductor layer 450 is laminated in the order of the n-type semiconductor layer 451 and the light emitting layer 452 and the p-type semiconductor layer 453 from the side of the interlayer insulating film 112 toward the side of the light emitting surfaces 453S1 and 453S2.
  • the n-type semiconductor layer 451 is provided on the light reflection plate 430a and is electrically connected to the light reflection plate 430a.
  • the interlayer insulating film 456 covers the flattening film 414 and the conductive layer 430.
  • the interlayer insulating film 456 covers a part of the semiconductor layer 450.
  • the interlayer insulating film 456 covers the surface of the p-type semiconductor layer 453 except for the light emitting surfaces (exposed surfaces) 453S1 and 453S2 of the semiconductor layer 450.
  • the interlayer insulating film 456 covers the side surface of the semiconductor layer 450.
  • the interlayer insulating film 456 is, for example, a white resin or the like, and may be a black resin.
  • Apertures 458-1 and 458-2 are formed in the portion of the semiconductor layer 450 that is not covered with the interlayer insulating film 456.
  • the openings 458-1 and 458-2 are formed at positions corresponding to the light emitting surfaces 453S1 and 453S2.
  • the light emitting surfaces 453S1 and 453S2 are formed at distant positions on the p-type semiconductor layer 453.
  • the light emitting surface 453S1 is provided on the p-type semiconductor layer 453 at a position closer to the transistor 103-1.
  • the light emitting surface 453S2 is provided on the p-type semiconductor layer 453 at a position closer to the transistor 103-2.
  • the openings 458-1 and 458-2 are, for example, square or rectangular in XY plan view.
  • the shape is not limited to a square, and may be a polygon such as a circle, an ellipse, or a hexagon.
  • the light emitting surfaces 453S1 and 453S2 are also squares, rectangles, other polygons, circles, etc. in XY plan view.
  • the shapes of the light emitting surfaces 453S1 and 453S2 may be similar to or different from the shapes of the openings 458-1 and 458-2.
  • the wiring layer 460 is provided on the interlayer insulating film 456.
  • the wiring layer 460 includes wirings 460a1 and 460a2.
  • the vias 461d1 and 461d2 are provided so as to penetrate the interlayer insulating films 112 and 456.
  • the via 461d1 is provided between the wiring 410d1 and the wiring 460a1.
  • One end of the via 461d1 is connected to the wiring 410d1, and the other end of the via 461d1 is connected to the wiring 460a1.
  • the via 461d2 is provided between the wiring 410d2 and the wiring 460a2.
  • One end of the via 461d2 is connected to the wiring 410d2, and the other end of the via 461d2 is connected to the wiring 460a2.
  • a translucent electrode 459a1 is provided on the wiring 460a1, and the wiring 460a1 and the translucent electrode 459a1 are electrically connected.
  • the translucent electrode 459a1 is extended to an opening 458-1.
  • the translucent electrode 459a1 is provided over the entire surface of the light emitting surface 453S1 exposed from the opening 458-1, and is electrically connected to the p-type semiconductor layer 453 via the light emitting surface 453S1.
  • a translucent electrode 459a2 is provided on the wiring 460a2, and the wiring 460a2 and the translucent electrode 459a2 are electrically connected to each other.
  • the translucent electrode 459a2 is extended to an opening 458-2.
  • the translucent electrode 459a2 is provided over the entire surface of the light emitting surface 453S2 exposed from the opening 458-2, and is electrically connected to the p-type semiconductor layer 453 via the light emitting surface 453S2.
  • the translucent electrodes 459a1 and 459a2 are connected to the light emitting surfaces 453S1 and 453S2 exposed from the openings 458-1 and 458-2, respectively.
  • the transistor 103-1 When the transistor 103-1 is turned on, holes are injected into the translucent electrode 459a1 via the wiring 460a1, the via 461d1 and the wiring 410d1.
  • the transistor 103-2 When the transistor 103-2 is turned on, holes are injected into the translucent electrode 459a2 via the wiring 460a2, the via 461d2, and the wiring 410d2.
  • electrons are injected into the n-type semiconductor layer 451 via the wiring 410k, the connection portion 415k, the plug 416k, and the light reflection plate 430a connected to the ground wire 4.
  • Transistors 103-1 and 103-2 are driving transistors of adjacent subpixels, and are driven sequentially. Therefore, the holes injected from either one of the two transistors 103-1 and 103-2 are injected into the light emitting layer 452, and the electrons injected from the light reflection plate 430a are injected into the light emitting layer 452 to be injected into the light emitting layer 452. 452 emits light.
  • the transistor 103-1 is turned on, the light emitting surface 453S1 emits light
  • the transistor 103-2 is turned on, the light emitting surface 453S2 emits light. In this way, the light emission in the light emitting layer 452 is localized because the resistance of the p-type semiconductor layer 453 suppresses the drift current flowing in the direction parallel to the XY plane in the semiconductor layer 450.
  • 19A to 22B are schematic cross-sectional views illustrating the method of manufacturing the image display device of the embodiment.
  • 19A to 20B show a step of forming the plug 416k on the circuit board 4100.
  • 21A to 22B show steps of forming a semiconductor layer 450 or the like on a circuit board 4100 on which a plug 416k is formed to form a subpixel group 420.
  • the circuit board 4100 is prepared.
  • the circuit board 4100 includes a circuit 101 similar to that described with reference to FIG. 1 and the like.
  • This circuit 101 includes transistors 103-1, 103-2, etc., and is formed on the TFT underlayer film 106 formed on the substrate 102.
  • the circuit 101 is covered with a first interlayer insulating film 112.
  • the contact hole h is formed in the interlayer insulating film 112.
  • the position where the contact hole h is formed is the position where the wiring 410k is provided.
  • the contact hole h is formed at a depth at which the surface of the wiring 410k is exposed.
  • the metal layer 4416 is formed over the entire surface of the interlayer insulating film 112.
  • the contact hole h is filled with the same conductive material as the metal layer 4416 at the same time as the metal layer 4416 is formed.
  • a connecting portion 415k is formed in the contact hole h filled with the material of the metal layer 4416. Therefore, the connection portion 415k electrically connects the wiring 410k and the metal layer 4416.
  • a plug 416k is formed on the connection portion 415k by photolithography and dry etching.
  • the plug may be formed directly on the wiring 410k without forming the connection portion 415k.
  • the flattening film 4414 is applied so as to cover the interlayer insulating film 112 and the plug 416k, and then fired.
  • the flattening film 4414 is formed so as to be thicker than the thickness of the plug 416k.
  • the surface of the flattening film 4414 is polished.
  • CMP Chemical Mechanical Polishing
  • polishing exposes the surface of the plug 416k and forms a flattening film 414. In this way, the plug 416k and the connection portion 415k are formed.
  • the conductive layer 4430 is formed on the plug 416k and the flattening film 414 of the circuit board 4100. After the conductive layer 4430 is patterned, it is single-crystallized over the entire surface of the conductive layer 4430 by an annealing treatment. Laser annealing is preferably used for the annealing treatment.
  • the semiconductor layer 4450 is formed on the conductive layer 4430a that has been single-crystallized over the entire surface. Pulse sputtering is preferably used to form the semiconductor layer 4450.
  • the semiconductor layer 4450 is grown from the n-type semiconductor layer 4451, followed by the light emitting layer 4452 and the p-type semiconductor layer 4453 in that order.
  • the semiconductor layer 4450 is formed on the conductive layer 4430a, and when there is a portion where the conductive layer 4430a does not exist or a portion of the conductive layer that has not been single crystallized, a deposit 4160 that is not single crystallized is formed. ..
  • the conductive layer 4430a shown in FIG. 21B is formed into a conductive layer 430 including a light reflecting plate 430a having a desired shape and pattern by etching or the like.
  • the semiconductor layer 4450 shown in FIG. 21B is formed into a desired shape by etching or the like to form the semiconductor layer 450.
  • a second interlayer insulating film 456 is formed on the first interlayer insulating film 112, the conductive layer 430, and the semiconductor layer 450. Vias 461d1 and 461d2 are formed through the interlayer insulating films 112 and 456 and the flattening film 414. Further, the wiring layer 460 is formed, and the wirings 460a1, 460a2 and the like are formed.
  • openings 458-1, 458-2 are formed between the wirings 460a1 and 460a2.
  • the light emitting surfaces 453S1 and 453S2 of the p-shaped semiconductor layer exposed by the openings 458-1 and 458-2 are roughened, respectively.
  • the translucent electrodes 459a1 and 459a2 are formed.
  • the subpixel group 420 having the semiconductor layer 450 sharing the two light emitting surfaces 453S1 and 453S2 is formed.
  • two light emitting surfaces 453S1 and 453S2 are provided on one semiconductor layer 450, but the number of light emitting surfaces is not limited to two, and three or more light emitting surfaces are one semiconductor. It can also be provided on layer 450. As an example, one row or two rows of subpixels may be realized by a single semiconductor layer 550. As a result, as will be described later, it is possible to reduce the recombination current that does not contribute to light emission per light emitting surface and increase the effect of realizing a finer light emitting element.
  • FIG. 23 is a schematic cross-sectional view illustrating a part of the image display device according to the modified example of the present embodiment.
  • This modification is different from the case of the fourth embodiment described above in that two p-type semiconductor layers 4453a1 and 4453a2 are provided on the light emitting layer 452.
  • the same components are designated by the same reference numerals and detailed description thereof will be omitted as appropriate.
  • the image display device of this modified example includes a sub-pixel group 420a.
  • the subpixel group 420a includes the semiconductor layer 450a.
  • the semiconductor layer 450a includes an n-type semiconductor layer 451 and a light emitting layer 452, and p-type semiconductor layers 4453a1 and 4453a2.
  • the semiconductor layer 450a is provided with an n-type semiconductor layer 451 on the plug 416k.
  • a light emitting layer 452 is laminated on the n-type semiconductor layer 451. Two different p-type semiconductor layers 4453a1 and 4453a2 are provided on the light emitting layer 452.
  • the p-type semiconductor layers 4453a1 and 4453a2 are arranged on the light emitting layer 452 so as to be separated from each other along the X-axis direction.
  • An interlayer insulating film 456 is provided between the p-type semiconductor layers 4453a1 and 4453a2, and the p-type semiconductor layers 4453a1 and 4453a2 are separated by an interlayer insulating film 456.
  • the p-type semiconductor layers 4453a1 and 4453a2 have substantially the same shape in XY plan view, and the shape is substantially square or rectangular, and may be another polygonal shape, circular shape, or the like.
  • the p-type semiconductor layers 4453a1 and 4453a2 have light emitting surfaces 4453S1 and 4453S2, respectively.
  • the light emitting surfaces 4453S1 and 4453S2 are surfaces of the p-type semiconductor layers 4453a1 and 4453a2 exposed by the openings 458-1 and 458-2, respectively.
  • the shapes of the light emitting surfaces 4453S1 and 4453S2 in the XY plan view have substantially the same shape as the shape of the light emitting surface in the case of the fourth embodiment, and have a shape such as a square.
  • the shape of the light emitting surfaces 4453S1 and 4453S2 is not limited to the square as in the present embodiment, and may be a polygon such as a circle, an ellipse, or a hexagon.
  • the shapes of the light emitting surfaces 4453S1 and 4453S2 may be similar to or different from the shapes of the openings 458-1 and 458-2.
  • Translucent electrodes 459a1 and 459a2 are provided on the light emitting surfaces 4453S1 and 4453S2, respectively.
  • the translucent electrodes 459a1 and 459a2 are also provided on the wirings 460a1 and 460a2, respectively.
  • the translucent electrode 459a1 is provided between the wiring 460a1 and the light emitting surface 4453S1, and electrically connects the wiring 460a1 and the light emitting surface 4453S1.
  • the translucent electrode 459a2 is provided between the wiring 460a2 and the light emitting surface 4453S2, and electrically connects the wiring 460a2 and the light emitting surface 4453S2.
  • 24A and 24B are schematic cross-sectional views illustrating a method of manufacturing an image display device of this modified example.
  • FIGS. 20A to 20A in the case of the fourth embodiment until the conductive layer of the single crystal metal is formed on the circuit board 4100 on which the plug 416k is formed and the semiconductor layer 4450 is formed on the conductive layer.
  • a process similar to the process described in FIG. 22B is applied.
  • the manufacturing method of this modified example will be described with respect to the steps after the step shown in FIG. 21B.
  • the conductive layer 4430a is etched or the like to form the conductive layer 430 including the light reflection plate 430a.
  • the semiconductor layer 4450 shown in FIG. 22B is etched to form the semiconductor layer 450a.
  • the n-type semiconductor layer 451 and the light emitting layer 452 are formed and then further etched to form two p-type semiconductor layers 4453a1 and 4453a2.
  • the p-type semiconductor layers 4453a1 and 4453a2 may be formed by deeper etching.
  • the etching for forming the p-type semiconductor layers 4453a1 and 4453a2 may be performed to a depth that reaches the inside of the light emitting layer 452 and the inside of the n-type semiconductor layer 451.
  • the etching position of the p-type semiconductor layer 4453 is at least 1 ⁇ m away from the outer periphery of the light emitting surfaces 4453S1 and 4453S2 of the p-type semiconductor layer.
  • the flattening film 414 and the interlayer insulating film 456 covering the semiconductor layer 450a are formed, and then vias 461d1 and 461d2 are formed. Further, the wiring layer 460 is formed, and the wirings 460a1, 460a2 and the like are formed.
  • Openings 458-1 and 458-2 are formed in the interlayer insulating film 456, respectively.
  • the light emitting surfaces 4453S1 and 4453S2 of the p-shaped semiconductor layer exposed by the openings 458-1 and 458-2 are roughened, respectively. After that, the translucent electrodes 459a1 and 459a2 are formed.
  • the subpixel group 420a having two light emitting surfaces 4453S1 and 4453S2 is formed.
  • the number of light emitting surfaces is not limited to two, and three or more light emitting surfaces are provided on one semiconductor layer 450a. May be good.
  • FIG. 25 is a graph illustrating the characteristics of the pixel LED element.
  • the vertical axis of FIG. 25 represents the luminous efficiency [%].
  • the horizontal axis represents the current density of the current flowing through the pixel LED element as a relative value.
  • the luminous efficiency of the pixel LED element increases substantially constant or monotonously.
  • the luminous efficiency decreases monotonically. That is, the pixel LED element has an appropriate current density that maximizes the luminous efficiency.
  • the light emitting elements 150-1 and 150-2 individually separate all layers of the semiconductor layer 1150 including the light emitting layers 152-1 and 152-2 by etching or the like. It is formed by etching. At this time, the joint surface between the light emitting layers 152-1 and 152-2 and the p-type semiconductor layer 153-1 and 153-2 is exposed at the end. Similarly, the joint surface between the light emitting layers 152-1 and 152-2 and the n-type semiconductor layer 151-1,151-2 is exposed at the end.
  • the ends are formed in all directions for each light emitting element, so that recombination may occur at a total of eight ends.
  • the semiconductor layers 450 and 450a having two light emitting surfaces have four ends. Since the region between the openings 458-1 and 458-2 has little injection of electrons and holes and hardly contributes to light emission, it can be considered that the number of ends contributing to light emission is six. As described above, in the present embodiment, the number of end portions of the semiconductor layer is substantially reduced to reduce the recombination current that does not contribute to light emission, and the reduction of the recombination current is to reduce the drive current. to enable.
  • the distance between the light emitting surfaces 453S1 and 453S2 in the subpixel group 420 of the fourth embodiment is used. Becomes shorter. In this case, if the p-type semiconductor layer 453 is shared, a part of the electrons injected to the side of the adjacent light emitting surface may be diverted, and the light emitting surface on the non-driven side may emit a small amount of light. ..
  • the p-type semiconductor layers 4453a1 and 4453a2 are separated for each of the light emitting surfaces 4453S1 and 4453S2, it is possible to reduce the occurrence of faint light emission on the light emitting surface on the non-driven side.
  • the semiconductor layer including the light emitting layer is laminated in the order of the n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer from the side of the interlayer insulating film 112, and the exposed surface of the p-type semiconductor layer is roughened. It is preferable from the viewpoint of surface-forming and improving the luminous efficiency.
  • the stacking order of the n-type semiconductor layer and the p-type semiconductor layer may be changed, and the p-type semiconductor layer, the light emitting layer, and the n-type semiconductor layer may be laminated in this order.
  • the order of stacking the light emitting elements can be changed and applied by the above-mentioned appropriate manufacturing procedure.
  • the light emitting device of the first embodiment can be laminated in the order of the p-type semiconductor layer, the light emitting layer, and the n-type semiconductor layer from the side of the first interlayer insulating film 112 toward the side of the light emitting surface.
  • the light emitting device of the second embodiment can be laminated in the order of the n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer from the side of the first interlayer insulating film 112 toward the side of the light emitting surface.
  • the image display device described above can be an image display module having an appropriate number of pixels, for example, a computer display, a television, a portable terminal such as a smartphone, a car navigation system, or the like.
  • FIG. 26 is a block diagram illustrating an image display device according to the present embodiment.
  • FIG. 26 shows the main parts of the configuration of a computer display.
  • the image display device 501 includes an image display module 502.
  • the image display module 502 is, for example, an image display device having the configuration of the first embodiment described above.
  • the image display module 502 includes a display area 2 in which the subpixels 20 are arranged, a row selection circuit 5, and a signal voltage output circuit 7.
  • the image display device 501 may be provided with a configuration in any of the second to fourth embodiments and modifications.
  • the image display device 501 further includes a controller 570.
  • the controller 570 inputs a control signal separated and generated by an interface circuit (not shown) to control the drive and drive order of each subpixel with respect to the row selection circuit 5 and the signal voltage output circuit 7.
  • FIG. 27 is a block diagram illustrating an image display device of this modified example.
  • FIG. 27 shows the configuration of a high-definition flat-screen television.
  • the image display device 601 includes an image display module 602.
  • the image display module 602 is, for example, an image display device 1 having the configuration in the case of the first embodiment described above.
  • the image display device 601 includes a controller 670 and a frame memory 680.
  • the controller 670 controls the drive order of each subpixel in the display area 2 based on the control signal supplied by the bus 640.
  • the frame memory 680 stores display data for one frame and is used for processing such as smooth moving image reproduction.
  • the image display device 601 has an I / O circuit 610.
  • the I / O circuit 610 provides an interface circuit or the like for connecting to an external terminal, a device, or the like.
  • the I / O circuit 610 includes, for example, a USB interface for connecting an external hard disk device or the like, an audio interface, or the like.
  • the image display device 601 has a receiving unit 620 and a signal processing unit 630.
  • An antenna 622 is connected to the receiving unit 620 to separate and generate a necessary signal from the radio waves received by the antenna 622.
  • the signal processing unit 630 includes a DSP (Digital Signal Processor), a CPU (Central Processing Unit), etc., and the signal separated and generated by the receiving unit 620 is converted into image data, audio data, etc. by the signal processing unit 630. Separated and generated.
  • an image display device provided with an image display module having an appropriate screen size and resolution can be a mobile information terminal such as a smartphone or a car navigation system.
  • the image display module in the case of the present embodiment is not limited to the configuration of the image display device in the case of the first embodiment, and may be a modified example thereof or the case of another embodiment.
  • FIG. 28 is a perspective view schematically illustrating an image display device of the first to fourth embodiments and modified examples thereof.
  • a light emitting circuit unit 172 having a large number of subpixels is provided on the circuit board 100.
  • a color filter 180 is provided on the light emitting circuit unit 172.
  • the structure including the circuit board 100, the light emitting circuit unit 172, and the color filter 180 is referred to as image display modules 502 and 602, and is incorporated in the image display devices 501 and 601.
  • 1,201,501,601 image display device 2 display area, 3 power supply line, 4 ground line, 5,205 line selection circuit, 6,206 scanning line, 7,207 signal voltage output circuit, 8,208 signal line, 10 pixels, 20-1, 20-2, 20a-1, 20b-1, subpixels, 22,222 light emitting elements, 24,224 selective transistors, 26,226 drive transistors, 28,228 capacitors, 100 circuit boards, 101 circuits , 102, 402 substrate, 103-1, 103-2, 203 transistor, 104, 204, 204-1, 204-2 TFT channel, 105 insulating layer, 107, 107-1, 107-2 gate, 108 insulating film, 110 1st wiring layer, 112 1st interlayer insulating film, 114,414 flattening film, 130,430 conductive layer, 130a, 430a light reflection plate, 140 graphene layer, 140-1, 140-2 graphene sheet, 150 -1,150-2,150a-1,250-1,250-2 light emitting element, 156,256,456 second

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