TWI843898B - 圖像顯示裝置之製造方法及圖像顯示裝置 - Google Patents
圖像顯示裝置之製造方法及圖像顯示裝置 Download PDFInfo
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- TWI843898B TWI843898B TW109134238A TW109134238A TWI843898B TW I843898 B TWI843898 B TW I843898B TW 109134238 A TW109134238 A TW 109134238A TW 109134238 A TW109134238 A TW 109134238A TW I843898 B TWI843898 B TW I843898B
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- Prior art keywords
- light
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- insulating film
- aforementioned
- emitting
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/30—Active-matrix LED displays
- H10H29/39—Connection of the pixel electrodes to the driving transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/80—Constructional details
- H10H29/832—Electrodes
- H10H29/8322—Electrodes characterised by their materials
- H10H29/8323—Transparent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/80—Constructional details
- H10H29/85—Packages
- H10H29/851—Wavelength conversion means
- H10H29/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/80—Constructional details
- H10H29/85—Packages
- H10H29/8517—Colour filters
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- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019181636 | 2019-10-01 | ||
| JP2019-181636 | 2019-10-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202127406A TW202127406A (zh) | 2021-07-16 |
| TWI843898B true TWI843898B (zh) | 2024-06-01 |
Family
ID=75336960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109134238A TWI843898B (zh) | 2019-10-01 | 2020-09-30 | 圖像顯示裝置之製造方法及圖像顯示裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12543419B2 (https=) |
| EP (1) | EP4040511B1 (https=) |
| JP (1) | JP7489605B2 (https=) |
| CN (1) | CN114342092B (https=) |
| TW (1) | TWI843898B (https=) |
| WO (1) | WO2021065918A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112331150A (zh) * | 2020-11-05 | 2021-02-05 | Tcl华星光电技术有限公司 | 显示装置及发光面板 |
| WO2022113949A1 (ja) * | 2020-11-25 | 2022-06-02 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
| TWI818428B (zh) * | 2022-01-27 | 2023-10-11 | 友達光電股份有限公司 | 通訊裝置及其通訊元件與此通訊元件的製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101577281A (zh) * | 2005-11-15 | 2009-11-11 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| WO2012124420A1 (ja) * | 2011-03-14 | 2012-09-20 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
| US20180175268A1 (en) * | 2016-12-20 | 2018-06-21 | Lg Display Co., Ltd. | Light emitting diode chip and light emitting diode dsiplay apparatus comprising the same |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5618474A (en) * | 1992-06-19 | 1997-04-08 | Massachusetts Institute Of Technology | Method of forming curved surfaces by etching and thermal processing |
| US7906229B2 (en) * | 2007-03-08 | 2011-03-15 | Amit Goyal | Semiconductor-based, large-area, flexible, electronic devices |
| KR100422333B1 (ko) * | 2000-07-31 | 2004-03-10 | 이노스텍 (주) | 단결정 거대 입자로 구성된 금속 박막 제조 방법 및 그 금속 박막 |
| JP2002141492A (ja) | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
| CN100380673C (zh) * | 2001-11-09 | 2008-04-09 | 株式会社半导体能源研究所 | 发光设备及其制造方法 |
| US6759689B2 (en) * | 2002-08-07 | 2004-07-06 | Shin-Etsu Handotai Co., Ltd. | Light emitting element and method for manufacturing the same |
| US7601994B2 (en) * | 2003-11-14 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| JP2008147608A (ja) | 2006-10-27 | 2008-06-26 | Canon Inc | Ｌｅｄアレイの製造方法とｌｅｄアレイ、及びｌｅｄプリンタ |
| TWI323047B (en) * | 2006-11-28 | 2010-04-01 | Univ Nat Taiwan | The method for forming electronic devices by using protection layers |
| WO2008091837A2 (en) * | 2007-01-22 | 2008-07-31 | Cree Led Lighting Solutions, Inc. | Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters |
| JP2009094144A (ja) * | 2007-10-04 | 2009-04-30 | Canon Inc | 発光素子の製造方法 |
| KR20110134685A (ko) * | 2010-06-09 | 2011-12-15 | 삼성모바일디스플레이주식회사 | 표시 장치 및 그 제조 방법 |
| US8647919B2 (en) * | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| KR101640293B1 (ko) * | 2010-10-07 | 2016-07-15 | 샤프 가부시키가이샤 | 반도체 장치, 표시 장치, 및 반도체 장치 및 표시 장치의 제조 방법 |
| JP5766481B2 (ja) * | 2011-03-29 | 2015-08-19 | 株式会社Ｊｏｌｅｄ | 表示装置および電子機器 |
| JP5460831B1 (ja) * | 2012-11-22 | 2014-04-02 | 株式会社東芝 | 半導体発光素子 |
| JP2016139560A (ja) | 2015-01-28 | 2016-08-04 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN104916527B (zh) * | 2015-05-15 | 2018-03-02 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
| KR102661474B1 (ko) * | 2016-04-11 | 2024-04-29 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| EP3913680B1 (fr) | 2016-05-13 | 2025-07-23 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de fabrication d'un dispositif optoélectronique comportant une pluralité de diodes au nitrure de gallium |
| KR102651097B1 (ko) * | 2016-10-28 | 2024-03-22 | 엘지디스플레이 주식회사 | 발광 다이오드 디스플레이 장치 |
| TW201917811A (zh) * | 2017-06-26 | 2019-05-01 | 美商特索羅科學有限公司 | 發光二極體質量傳遞設備及製造方法 |
| KR102454083B1 (ko) | 2017-08-30 | 2022-10-12 | 엘지디스플레이 주식회사 | 마이크로-led 표시장치 및 그 제조방법 |
| WO2019049360A1 (ja) | 2017-09-11 | 2019-03-14 | 凸版印刷株式会社 | 表示装置及び表示装置基板 |
| KR102527303B1 (ko) * | 2017-10-31 | 2023-04-27 | 엘지디스플레이 주식회사 | 발광 표시 장치 |
| US10748879B2 (en) | 2018-02-28 | 2020-08-18 | Sharp Kabushiki Kaisha | Image display device and display |
| JP7249787B2 (ja) | 2018-02-28 | 2023-03-31 | シャープ株式会社 | 表示素子及び表示装置 |
| JP7248441B2 (ja) | 2018-03-02 | 2023-03-29 | シャープ株式会社 | 画像表示素子 |
| CN108987425B (zh) * | 2018-07-19 | 2020-09-18 | 豪威半导体（上海）有限责任公司 | 微led显示器及其制造方法 |
| CN109273479B (zh) * | 2018-09-20 | 2021-07-23 | 上海天马微电子有限公司 | 一种显示面板及其制作方法 |
| CN110034150B (zh) * | 2019-03-25 | 2020-11-27 | 厦门天马微电子有限公司 | 显示面板及其制作方法、显示装置 |
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2020
- 2020-09-29 WO PCT/JP2020/036935 patent/WO2021065918A1/ja not_active Ceased
- 2020-09-29 JP JP2021551314A patent/JP7489605B2/ja active Active
- 2020-09-29 CN CN202080061426.1A patent/CN114342092B/zh active Active
- 2020-09-29 EP EP20871886.6A patent/EP4040511B1/en active Active
- 2020-09-30 TW TW109134238A patent/TWI843898B/zh active
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2022
- 2022-03-30 US US17/709,006 patent/US12543419B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101577281A (zh) * | 2005-11-15 | 2009-11-11 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| WO2012124420A1 (ja) * | 2011-03-14 | 2012-09-20 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
| US20180175268A1 (en) * | 2016-12-20 | 2018-06-21 | Lg Display Co., Ltd. | Light emitting diode chip and light emitting diode dsiplay apparatus comprising the same |
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| Publication number | Publication date |
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| WO2021065918A1 (ja) | 2021-04-08 |
| JP7489605B2 (ja) | 2024-05-24 |
| CN114342092B (zh) | 2024-12-24 |
| US20220223776A1 (en) | 2022-07-14 |
| US12543419B2 (en) | 2026-02-03 |
| EP4040511A1 (en) | 2022-08-10 |
| CN114342092A (zh) | 2022-04-12 |
| JPWO2021065918A1 (https=) | 2021-04-08 |
| EP4040511A4 (en) | 2023-11-08 |
| TW202127406A (zh) | 2021-07-16 |
| EP4040511B1 (en) | 2025-10-08 |
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