JP7476442B2 - 合金化すること及びプラチナ合金をエッチングすることによるプラチナのパターン化 - Google Patents

合金化すること及びプラチナ合金をエッチングすることによるプラチナのパターン化 Download PDF

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JP7476442B2
JP7476442B2 JP2021527030A JP2021527030A JP7476442B2 JP 7476442 B2 JP7476442 B2 JP 7476442B2 JP 2021527030 A JP2021527030 A JP 2021527030A JP 2021527030 A JP2021527030 A JP 2021527030A JP 7476442 B2 JP7476442 B2 JP 7476442B2
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layer
platinum
aluminum
patterned
hard mask
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JP2021531415A5 (https=
JPWO2020023953A5 (https=
JP2021531415A (ja
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マイヤー セバスチャン
リンク ヘルムート
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テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Pathology (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2021527030A 2018-07-27 2019-07-29 合金化すること及びプラチナ合金をエッチングすることによるプラチナのパターン化 Active JP7476442B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024033639A JP2024072836A (ja) 2018-07-27 2024-03-06 マイクロ電子デバイス

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862703937P 2018-07-27 2018-07-27
US62/703,937 2018-07-27
US16/523,867 2019-07-26
US16/523,867 US11011381B2 (en) 2018-07-27 2019-07-26 Patterning platinum by alloying and etching platinum alloy
PCT/US2019/043850 WO2020023953A1 (en) 2018-07-27 2019-07-29 Patterning platinum by alloying and etching platinum alloy

Related Child Applications (1)

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JP2024033639A Division JP2024072836A (ja) 2018-07-27 2024-03-06 マイクロ電子デバイス

Publications (4)

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JP2021531415A JP2021531415A (ja) 2021-11-18
JP2021531415A5 JP2021531415A5 (https=) 2022-08-04
JPWO2020023953A5 JPWO2020023953A5 (https=) 2022-08-04
JP7476442B2 true JP7476442B2 (ja) 2024-05-01

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JP2021527030A Active JP7476442B2 (ja) 2018-07-27 2019-07-29 合金化すること及びプラチナ合金をエッチングすることによるプラチナのパターン化
JP2024033639A Pending JP2024072836A (ja) 2018-07-27 2024-03-06 マイクロ電子デバイス

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US (3) US11011381B2 (https=)
EP (1) EP3830862A4 (https=)
JP (2) JP7476442B2 (https=)
KR (2) KR102646859B1 (https=)
CN (1) CN112753093A (https=)
WO (1) WO2020023953A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011381B2 (en) * 2018-07-27 2021-05-18 Texas Instruments Incorporated Patterning platinum by alloying and etching platinum alloy
CN111945128A (zh) * 2020-08-18 2020-11-17 江苏能华微电子科技发展有限公司 一种提高铂与衬底黏附性的方法及其产品
US12607594B2 (en) 2020-09-03 2026-04-21 Texas Instruments Incorporated ISFET biosensor
DE102024203632A1 (de) * 2024-04-18 2025-10-23 Infineon Technologies Ag Halbleiterchip und verfahren zur herstellung davon
CN118857496B (zh) * 2024-09-25 2025-01-28 南昌三盛半导体有限公司 一种铂薄膜温度传感器及其制备方法

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JPS54137273A (en) * 1978-04-17 1979-10-24 Nec Corp Semiconductor device
JPS5843539A (ja) 1981-09-08 1983-03-14 Nec Corp 半導体装置
US4740485A (en) * 1986-07-22 1988-04-26 Monolithic Memories, Inc. Method for forming a fuse
JP3134093B2 (ja) * 1992-06-23 2001-02-13 本田技研工業株式会社 白金パターンの形成方法
DE4402117C2 (de) 1994-01-25 1995-11-23 Siemens Matsushita Components Hochtemperatur-Gassensor und Verfahren zu seiner Herstellung
JPH11145112A (ja) * 1997-11-07 1999-05-28 Nec Corp パターニング方法
EP0929096A2 (en) * 1998-01-08 1999-07-14 International Business Machines Corporation Metal patterning by formation of etchable plural metal compositions
US6475911B1 (en) * 2000-08-16 2002-11-05 Micron Technology, Inc. Method of forming noble metal pattern
US6790786B2 (en) * 2002-03-05 2004-09-14 Micron Technology, Inc. Etching processes for integrated circuit manufacturing including methods of forming capacitors
JP2004311624A (ja) * 2003-04-04 2004-11-04 Tokuyama Corp 積層体およびその製造方法
WO2005081317A1 (ja) * 2004-02-19 2005-09-01 Fujitsu Limited 半導体装置の製造方法
EP1591776A1 (en) 2004-04-30 2005-11-02 Henkel KGaA Gas sensor for the determination of isocyanates using metal oxide semiconductors
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JP5865634B2 (ja) * 2011-09-06 2016-02-17 三菱電機株式会社 配線膜の製造方法
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US20140077662A1 (en) * 2012-09-19 2014-03-20 The Governors Of The University Of Alberta Piezoelectric apparatus for harvesting energy for portable electronics and method for manufacturing same
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Also Published As

Publication number Publication date
KR102646859B1 (ko) 2024-03-13
KR20240038117A (ko) 2024-03-22
US20200035500A1 (en) 2020-01-30
US20210242029A1 (en) 2021-08-05
EP3830862A1 (en) 2021-06-09
KR20210035189A (ko) 2021-03-31
US11658034B2 (en) 2023-05-23
WO2020023953A1 (en) 2020-01-30
CN112753093A (zh) 2021-05-04
EP3830862A4 (en) 2021-12-29
US20230253211A1 (en) 2023-08-10
JP2024072836A (ja) 2024-05-28
US11011381B2 (en) 2021-05-18
JP2021531415A (ja) 2021-11-18

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